IXTP8N70X2 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTP8N70X2 is an N-Channel MOSFET manufactured by IXYS, rated for 700V drain-to-source voltage with 8A continuous drain current at 25°C. This device operates in the Ultra X2 series and is housed in a TO-220-3 through-hole package. The part is currently active in production with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified based on matching electrical characteristics within acceptable operating parameters, including drain-to-source voltage rating, continuous drain current capability, gate charge specifications, and thermal performance. Alternative components maintain compatibility with TO-220-3 package footprints and support equivalent gate drive voltage requirements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	700	V
Continuous Drain Current (Id) @ 25°C	8	A
On-State Resistance (Rds On) @ 500mA, 10V	500	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	12	nC
Power Dissipation (Max)	150	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitute parts are grouped into two categories based on voltage rating alignment and current capability:

Category 1: High-Voltage Equivalents (700V–800V Rating) Parts in this category maintain the 700V or higher drain-to-source voltage specification of the IXTP8N70X2. These devices are direct functional replacements where voltage stress margins are critical. The STP13N80K5 (800V, 12A) provides enhanced voltage headroom and increased current capacity.

Category 2: Reduced-Voltage Alternatives (600V–650V Rating) Parts in this category operate at reduced drain-to-source voltage ratings (600V to 650V). These substitutes are applicable in applications where the circuit voltage stress does not exceed the lower rating. Devices in this group include the FCP7N60, STP10N60M2, STP10NM60N, STP10NM60ND, STP11N60DM2, STP11NM60FD, and STP12N65M5.

Substitution Criteria:

Drain-to-source voltage rating equal to or greater than 700V (Category 1) or confirmed circuit compatibility at 600V–650V (Category 2)
Continuous drain current rating of 7A or greater
Gate charge specification of 30 nC or less (preferred for switching performance)
Maximum gate voltage rating of ±25V or ±30V
TO-220-3 package footprint compatibility
Operating temperature range of -55°C to 150°C
RoHS3 compliance and REACH unaffected status

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg @ 10V (nC)	Pd Max (W)	Package	Status
IXTP8N70X2	IXYS	700	8	500	12	150	TO-220-3	Active
STP13N80K5	STMicroelectronics	800	12	450	29	190	TO-220-3	Active
FCP7N60	onsemi	600	7	600	30	83	TO-220-3	Not For New Designs
STP10N60M2	STMicroelectronics	600	7.5	600	13.5	85	TO-220-3	Active
STP10NM60N	STMicroelectronics	600	10	550	19	70	TO-220-3	Active
STP10NM60ND	STMicroelectronics	600	8	600	20	70	TO-220-3	Obsolete
STP11N60DM2	STMicroelectronics	600	10	420	16.5	110	TO-220-3	Active
STP11NM60FD	STMicroelectronics	600	11	450	40	160	TO-220-3	Active
STP12N65M5	STMicroelectronics	650	8.5	430	22	70	TO-220-3	Active
STP13NK60Z	STMicroelectronics	600	13	550	92	150	TO-220-3	Active

Engineering Selection Recommendations

Primary Substitute (High-Voltage Requirement): The STP13N80K5 is the recommended substitute when 700V or higher voltage rating is mandatory. This part maintains superior voltage headroom with an 800V Vdss rating, delivers 12A continuous drain current, and provides 190W power dissipation capability. The device is active in production with full RoHS3 compliance and unlimited moisture sensitivity rating. Gate charge of 29 nC is acceptable for most switching applications.

Secondary Substitutes (600V–650V Applications): For applications where circuit voltage stress does not exceed 600V, the following active parts are suitable:

STP11N60DM2: Offers 10A continuous current with superior on-state resistance (420 mOhm) and 110W power dissipation. Recommended for applications requiring lower conduction losses.
STP12N65M5: Provides 650V rating with 8.5A current and 430 mOhm on-state resistance. Suitable as a bridge between 600V and 700V requirements.
STP10N60M2: Delivers 7.5A current with 600 mOhm on-state resistance and 85W power dissipation. Appropriate for lower-power applications.
STP10NM60N: Rated for 10A continuous current with 550 mOhm on-state resistance and 70W power dissipation. Suitable for higher current applications at reduced voltage.

Parts to Avoid:

FCP7N60 (onsemi): Marked "Not For New Designs" and should not be selected for new circuit implementations.
STP10NM60ND (STMicroelectronics): Obsolete status indicates end-of-life status and limited future availability.

All recommended active substitutes maintain TO-220-3 package compatibility, RoHS3 compliance, and operating temperature range of -55°C to 150°C.

Frequently Asked Questions (FAQ)

Q: Can the STP13N80K5 be used as a direct replacement for the IXTP8N70X2? A: Yes. The STP13N80K5 provides 800V drain-to-source voltage, exceeding the 700V requirement of the IXTP8N70X2. The 12A continuous current rating and 190W power dissipation exceed the original specifications. Both devices use TO-220-3 packaging and support ±30V gate voltage. Verify circuit board layout accommodates the substitute part's thermal characteristics.

Q: What is the voltage derating consideration when using 600V-rated parts in place of the IXTP8N70X2? A: The IXTP8N70X2 is rated for 700V operation. Substitutes rated at 600V or 650V reduce the voltage safety margin by 100V or 50V respectively. Use 600V–650V substitutes only when the maximum circuit voltage stress is confirmed to remain below the substitute part's Vdss rating with adequate design margin.

Q: Are all substitute parts compatible with the same gate drive circuit? A: All substitute parts accept 10V gate drive voltage and operate within ±25V to ±30V maximum gate voltage range. Gate charge values vary from 12 nC (IXTP8N70X2) to 92 nC (STP13NK60Z). Higher gate charge values require proportionally longer switching times. Verify gate drive circuit current capacity is sufficient for the selected substitute's gate charge specification.

Q: Why is the STP10NM60ND listed if it is obsolete? A: The STP10NM60ND is included for reference in legacy system maintenance and repair applications. New designs must not use obsolete parts. For new implementations, select from active-status alternatives such as STP11N60DM2 or STP10NM60N.

Q: What is the thermal performance difference between the IXTP8N70X2 and recommended substitutes? A: The IXTP8N70X2 dissipates 150W maximum. The STP13N80K5 dissipates 190W, providing enhanced thermal capacity. Lower-voltage substitutes (600V–650V) typically dissipate 70W–160W. Select substitutes based on circuit power dissipation requirements and available thermal management (heatsinking).

Q: Can the STP13NK60Z be used despite its high gate charge specification? A: The STP13NK60Z operates at 600V with 13A continuous current and 150W power dissipation, matching the IXTP8N70X2 power rating. However, its gate charge of 92 nC is significantly higher than the original 12 nC specification. This requires gate drive circuits with higher current capability and results in longer switching transitions. Use only if gate drive circuit design accommodates the increased charge requirement.

Q: Are all substitute parts RoHS3 compliant? A: Yes. All listed substitute parts carry RoHS3 compliance certification and REACH unaffected status, matching the environmental compliance profile of the IXTP8N70X2.

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