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IXTP130N065T2 N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The IXTP130N065T2 is an N-Channel MOSFET manufactured by IXYS in the TrenchT2™ series, rated for 65V drain-to-source voltage with 130A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is rated for 250W power dissipation. The part is currently classified as obsolete, necessitating identification of functionally equivalent alternatives from active product lines that maintain electrical and mechanical compatibility for direct board-level substitution.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 65 | V |
| Continuous Drain Current (Id) @ 25°C | 130 | A (Tc) |
| Power Dissipation (Max) | 250 | W (Tc) |
| On-Resistance (Rds On) @ 50A, 10V | 6.6 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 | V |
| Gate Charge (Qg) @ 10V | 79 | nC |
| Input Capacitance (Ciss) @ 25V | 4800 | pF |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | TO-220-3 | Through Hole |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
Substitute Part Grouping Explanation
Substitution of the IXTP130N065T2 is determined by the following critical electrical and mechanical parameters:
Electrical Compatibility Criteria:
- Drain-to-Source Voltage (Vdss) must equal or exceed 65V
- Continuous Drain Current (Id) must equal or exceed 130A at 25°C
- On-Resistance (Rds On) must not significantly exceed 6.6 mOhm to maintain thermal performance
- Gate Threshold Voltage (Vgs(th)) must be compatible with 10V drive voltage
- Operating temperature range must encompass -55°C to 175°C
Mechanical Compatibility Criteria:
- Package must be TO-220-3 through-hole configuration for direct PCB mounting compatibility
- Lead configuration and thermal tab design must support existing heatsink interfaces
Substitutes are grouped into two categories:
-
Direct Substitutes (TO-220-3 Through-Hole): Parts meeting or exceeding all electrical parameters while maintaining identical TO-220-3 packaging. These include IRFB3307ZPBF, DMT6005LCT, DMT6010SCT, DMTH6005LCT, DMTH6010SCT, CSD18533KCS, and FDP070AN06A0.
-
Functional Alternatives (Different Package): BUK9608-55B,118 provides equivalent electrical performance but uses D2PAK surface-mount packaging, requiring PCB redesign and is not recommended for direct substitution without layout modification.
-
Partial Substitutes (Lower Current Rating): AOT2606L provides compatible voltage and package but with reduced continuous drain current (72A Tc), suitable only for applications with lower current requirements.
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Vgs(th) (V) | Qg (nC) | Ciss (pF) | Power Diss. (W) | Package | Status |
|---|---|---|---|---|---|---|---|---|---|---|
| IXTP130N065T2 | IXYS | 65 | 130 (Tc) | 6.6 @ 50A, 10V | 4 @ 250µA | 79 @ 10V | 4800 @ 25V | 250 (Tc) | TO-220-3 | Obsolete |
| IRFB3307ZPBF | Infineon | 75 | 120 (Tc) | 5.8 @ 75A, 10V | 4 @ 150µA | 110 @ 10V | 4750 @ 50V | 230 (Tc) | TO-220-3 | Active |
| IRFB3307PBF | Infineon | 75 | 130 (Tc) | 6.3 @ 75A, 10V | 4 @ 150µA | 180 @ 10V | 5150 @ 50V | 200 (Tc) | TO-220-3 | Active |
| CSD18533KCS | Texas Instruments | 60 | 100 (Tc) | 6.3 @ 75A, 10V | 2.3 @ 250µA | 34 @ 10V | 3025 @ 30V | 192 (Tc) | TO-220-3 | Active |
| DMT6005LCT | Diodes Inc. | 60 | 100 (Tc) | 6 @ 20A, 10V | 3 @ 250µA | 47.1 @ 10V | 2962 @ 30V | 104 (Tc) | TO-220-3 | Active |
| DMT6010SCT | Diodes Inc. | 60 | 98 (Tc) | 7.2 @ 20A, 10V | 4 @ 250µA | 36.3 @ 10V | 1940 @ 30V | 104 (Tc) | TO-220-3 | Active |
| DMTH6005LCT | Diodes Inc. | 60 | 100 (Tc) | 6 @ 20A, 10V | 3 @ 250µA | 47.1 @ 10V | 2962 @ 30V | 125 (Tc) | TO-220-3 | Active |
| DMTH6010SCT | Diodes Inc. | 60 | 100 (Tc) | 7.2 @ 20A, 10V | 4 @ 250µA | 36.3 @ 10V | 1940 @ 30V | 125 (Tc) | TO-220-3 | Active |
| FDP070AN06A0 | Fairchild | 60 | 80 (Tc) | 7 @ 80A, 10V | 4 @ 250µA | 66 @ 10V | 3000 @ 25V | 175 (Tc) | TO-220-3 | Active |
| AOT2606L | Alpha & Omega | 60 | 72 (Tc) | 6.5 @ 20A, 10V | 3.5 @ 250µA | 75 @ 10V | 4050 @ 30V | 115 (Tc) | TO-220-3 | Active |
| BUK9608-55B,118 | Nexperia | 55 | 75 (Tc) | 7 @ 25A, 10V | 2 @ 1mA | 45 @ 5V | 5280 @ 25V | 203 (Tc) | D2PAK | Active |
Engineering Selection Recommendations
Primary Substitute: IRFB3307ZPBF
The IRFB3307ZPBF from Infineon is the recommended primary substitute. It maintains TO-220-3 through-hole packaging for direct PCB compatibility. With 75V Vdss rating, it exceeds the 65V requirement with design margin. The 120A continuous drain current at 25°C approaches the original 130A specification. On-resistance of 5.8 mOhm at 75A, 10V is superior to the original 6.6 mOhm, resulting in lower thermal dissipation. Gate threshold voltage of 4V matches the original specification. The part is in active production status with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1). High inventory availability (55,200 units) ensures supply continuity.
Secondary Substitute: IRFB3307PBF
The IRFB3307PBF provides identical 130A continuous drain current matching the original specification exactly. The 75V Vdss rating provides voltage margin. On-resistance of 6.3 mOhm is comparable to the original 6.6 mOhm. Gate threshold voltage of 4V matches the original. This part is in active production with ROHS3 compliance. Lower inventory (1,952 units) compared to IRFB3307ZPBF. Power dissipation rating of 200W is lower than the original 250W, requiring thermal analysis for high-power applications.
Tertiary Substitutes: Diodes Incorporated DMTH Series (DMTH6005LCT, DMTH6010SCT)
The DMTH6005LCT and DMTH6010SCT maintain TO-220-3 packaging and support 100A continuous drain current at 25°C. Both are rated for 60V Vdss, which is below the original 65V specification but acceptable for applications with adequate design margin. Power dissipation ratings of 125W (Tc) are lower than the original 250W. Both parts carry AEC-Q101 automotive qualification and are in active production status. Operating temperature range extends to 175°C, matching the original specification.
Alternative Substitute: CSD18533KCS (Texas Instruments)
The CSD18533KCS provides 100A continuous drain current at 25°C in TO-220-3 packaging. The 60V Vdss rating is below the original 65V specification. On-resistance of 6.3 mOhm at 75A, 10V is comparable to the original. Gate charge of 34 nC at 10V is significantly lower than the original 79 nC, indicating faster switching characteristics. The part is in active production status with ROHS3 compliance. Power dissipation of 192W (Tc) is lower than the original 250W.
Not Recommended for Direct Substitution:
- BUK9608-55B,118: Surface-mount D2PAK package requires PCB redesign and is not compatible with through-hole TO-220-3 footprints.
- AOT2606L: Continuous drain current of 72A (Tc) is significantly below the original 130A specification, limiting application scope.
- DMT6005LCT, DMT6010SCT, FDP070AN06A0: Power dissipation ratings (104W, 104W, 175W respectively) are substantially lower than the original 250W, requiring thermal re-evaluation for high-power applications.
Frequently Asked Questions (FAQ)
Q: Can IRFB3307ZPBF be used as a direct replacement for IXTP130N065T2 without PCB modification?
A: Yes. Both parts use TO-220-3 through-hole packaging with identical lead configuration and thermal tab design. No PCB layout changes are required. Electrical parameters are compatible within design margins.
Q: Why is the 75V Vdss rating on IRFB3307ZPBF acceptable when the original is 65V?
A: The higher voltage rating provides design margin and does not create incompatibility. The part operates safely at voltages up to 75V, which encompasses the original 65V operating range. This is a conservative design practice.
Q: What is the significance of the lower continuous drain current (120A) on IRFB3307ZPBF compared to the original 130A?
A: The 120A rating is 92% of the original 130A specification. For applications requiring the full 130A capability, IRFB3307PBF with 130A rating is the appropriate choice. For most applications operating below 120A, IRFB3307ZPBF is suitable.
Q: Are the Diodes Incorporated DMTH series parts suitable for automotive applications?
A: Yes. DMTH6005LCT and DMTH6010SCT carry AEC-Q101 automotive qualification, indicating compliance with automotive reliability and quality standards. These parts are suitable for automotive-grade applications.
Q: Why do some substitute parts have lower power dissipation ratings than the original?
A: Power dissipation rating depends on package thermal characteristics and die design. Lower ratings do not indicate inferior performance but reflect different thermal management capabilities. Applications requiring the full 250W dissipation capability should select parts with comparable power ratings, such as IRFB3307ZPBF (230W) or IRFB3307PBF (200W).
Q: Can BUK9608-55B,118 be used as a substitute?
A: BUK9608-55B,118 uses D2PAK surface-mount packaging, which is mechanically incompatible with TO-220-3 through-hole footprints. Direct substitution on existing PCBs is not possible without complete layout redesign. This part is not recommended for direct replacement applications.
Q: What is the impact of different gate charge (Qg) values on circuit performance?
A: Gate charge affects switching speed and driver circuit requirements. Lower gate charge (such as CSD18533KCS at 34 nC) enables faster switching with lower driver power dissipation. Higher gate charge (such as IRFB3307PBF at 180 nC) requires more driver current but is still compatible with standard gate driver circuits rated for 10V drive voltage.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All substitute parts listed carry ROHS3 compliance certification, meeting environmental and hazardous substance restrictions applicable to electronic components.
Q: What is the difference between Ta and Tc current ratings?
A: Ta (ambient temperature) rating is the continuous drain current at 25°C ambient temperature with natural convection cooling. Tc (case temperature) rating is the continuous drain current at 25°C case temperature with active cooling or heatsinking. Tc ratings are typically higher and represent the device capability with proper thermal management.
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