IXTP05N100P N-Channel MOSFET 1000V 500mA Equivalent & Substitute Parts

Part Overview

The IXTP05N100P is an N-Channel MOSFET manufactured by IXYS in the Polar series, rated for 1000V drain-to-source voltage with 500mA continuous drain current at 25°C. The device is packaged in a Through Hole TO-220-3 configuration and is rated for 50W maximum power dissipation. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IXTP05N100P

IXYSIn Stock: 695IXTP05N100P Datasheet

Current PartRFQ

IXTP08N100P

IXYSIn Stock: 2187IXTP08N100P Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTP05N100P is determined by strict equivalence across the following critical electrical and mechanical parameters:

Mandatory Equivalence Criteria:

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Operating Temperature Range: -55°C to 150°C (TJ)
• Gate-Source Voltage (Vgs Max): ±20V

Allowable Variation Parameters:

• Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 500mA
• Rds On (Max): Equal to or less than 30 Ohm (lower on-resistance is acceptable)
• Power Dissipation (Max): Equal to or greater than 50W
• Gate Charge (Qg): Equal to or less than 8.1 nC (lower gate charge is acceptable)
• Input Capacitance (Ciss): Equal to or less than 196 pF (lower capacitance is acceptable)

The IXTP08N100P meets all mandatory equivalence criteria and demonstrates improved electrical performance in allowable variation parameters, qualifying it as a direct substitute.

Parameter Comparison

Engineering Selection Recommendations

IXTP08N100P as Primary Substitute:

The IXTP08N100P is the manufacturer-recommended substitute for the obsolete IXTP05N100P. Both devices are members of the IXYS Polar series and maintain identical voltage ratings, gate-source specifications, and thermal operating ranges. Both components are ROHS3 compliant, REACH unaffected, and carry MSL Level 1 (unlimited moisture sensitivity).

The IXTP08N100P provides enhanced current handling capability at 800mA continuous drain current compared to the 500mA rating of the IXTP05N100P. The on-resistance specification of 20 Ohm at 500mA, 10V represents an improvement over the 30 Ohm specification of the main part at 250mA, 10V. Both devices share identical gate threshold voltage specifications and maximum gate-source voltage ratings.

The IXTP08N100P is classified as an active product with 2110 units in stock, ensuring availability for production and maintenance applications. The IXTP05N100P is obsolete with 648 units remaining in inventory.

Both devices are packaged in TO-220-3 through-hole configuration, enabling direct mechanical and electrical substitution without circuit board redesign or layout modification.

Frequently Asked Questions (FAQ)

Q: Can the IXTP08N100P be used as a direct replacement for the IXTP05N100P in existing designs?

A: Yes. Both devices share identical drain-to-source voltage ratings (1000V), gate-source voltage specifications (±20V maximum), threshold voltage characteristics (4V @ 50µA), and thermal operating range (-55°C to 150°C). Both are packaged in TO-220-3 through-hole configuration. The IXTP08N100P provides higher continuous drain current (800mA vs. 500mA) and lower on-resistance, making it functionally compatible for direct substitution.

Q: What are the key differences between the IXTP05N100P and IXTP08N100P?

A: The primary differences are continuous drain current rating (500mA vs. 800mA), on-resistance specification (30 Ohm vs. 20 Ohm), gate charge (8.1 nC vs. 11.3 nC), input capacitance (196 pF vs. 240 pF), and power dissipation rating (50W vs. 42W). The IXTP08N100P offers improved current handling and lower on-resistance. The IXTP05N100P is obsolete; the IXTP08N100P is active.

Q: Are there any compliance or certification differences between these parts?

A: No. Both the IXTP05N100P and IXTP08N100P are ROHS3 compliant, REACH unaffected, and carry MSL Level 1 (unlimited) moisture sensitivity ratings. Both are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Q: What is the significance of the higher gate charge in the IXTP08N100P?

A: The IXTP08N100P has a gate charge specification of 11.3 nC at 10V compared to 8.1 nC for the IXTP05N100P. This represents the total charge required to switch the device from off to on state. The higher gate charge in the substitute part reflects its higher current rating and is within acceptable design parameters for applications originally specified for the IXTP05N100P.

Q: Is the input capacitance difference between these parts significant for circuit design?

A: The IXTP08N100P has an input capacitance of 240 pF at 25V compared to 196 pF for the IXTP05N100P. This 44 pF difference may affect switching speed and gate drive circuit design in high-frequency applications. Circuit simulation or testing is appropriate for applications operating near maximum switching frequency limits.

Q: Can the IXTP05N100P be used in place of the IXTP08N100P?

A: No. The IXTP05N100P has lower continuous drain current (500mA vs. 800mA) and higher on-resistance (30 Ohm vs. 20 Ohm). Using the lower-rated part in a circuit designed for the IXTP08N100P may result in thermal stress and reduced reliability.

Q: What is the packaging difference between these parts?

A: The IXTP05N100P is supplied in standard packaging; the IXTP08N100P is supplied in tube packaging. Both use identical TO-220-3 through-hole package configuration, ensuring mechanical compatibility on printed circuit boards.