IXTH24N50 N-Channel 500V 24A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTH24N50 is an N-Channel 500V 24A MOSFET manufactured by IXYS in the MegaMOS™ series, housed in a TO-247 through-hole package. This device is rated for 300W maximum power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently in Last Time Buy status, indicating that original inventory is limited and alternative solutions should be evaluated for new designs or long-term production requirements.

Substitution becomes necessary due to inventory constraints, product lifecycle discontinuation, or application-specific performance requirements that may be better served by active production alternatives with comparable electrical and mechanical specifications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	24	A
On-State Resistance (Rds On) @ 12A, 10V	230	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	190	nC
Input Capacitance (Ciss) @ 25V	4200	pF
Maximum Power Dissipation (Tc)	300	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution eligibility for the IXTH24N50 is determined by the following critical parameters:

Primary Matching Criteria:

Drain to Source Voltage (Vdss): 500V (exact match required)
FET Type: N-Channel (exact match required)
Technology: MOSFET Metal Oxide (exact match required)
Package Type: TO-247 or TO-247-3 (mechanical compatibility required)
Mounting Type: Through Hole (exact match required)

Secondary Performance Criteria:

Continuous Drain Current (Id): 22A to 30A (acceptable range for equivalent operation)
On-State Resistance (Rds On): 120 to 270 mOhm (within acceptable thermal performance envelope)
Gate Threshold Voltage (Vgs(th)): 4V to 5.5V (within acceptable gate drive compatibility)
Maximum Power Dissipation: 110W to 400W (application-dependent selection)
Operating Temperature: -55°C to 150°C minimum (thermal envelope match)

Substitutes are grouped into two categories: MFR Recommended (manufacturer-endorsed alternatives) and Similar (functionally equivalent parts meeting all primary criteria).

Parameter Comparison

Parameter	IXTH24N50	IXTH22N50P	IXFH26N50P	STW19NM50N	STW20NM50FD	STW26NM50	STW28NM50N
Manufacturer	IXYS	IXYS	IXYS	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	500	500	500	500	500	500	500
Id @ 25°C (A)	24	22	26	14	20	30	21
Rds On (mOhm)	230 @ 12A	270 @ 11A	230 @ 13A	250 @ 7A	250 @ 10A	120 @ 13A	158 @ 10.5A
Vgs(th) (V)	4 @ 250µA	5.5 @ 250µA	5.5 @ 4mA	4 @ 250µA	5 @ 250µA	5 @ 250µA	4 @ 250µA
Qg (nC)	190 @ 10V	50 @ 10V	60 @ 10V	34 @ 10V	53 @ 10V	106 @ 10V	50 @ 10V
Ciss (pF)	4200 @ 25V	2630 @ 25V	3600 @ 25V	1000 @ 50V	1380 @ 25V	3000 @ 25V	1735 @ 25V
Power Dissipation (W)	300	350	400	110	214	313	150
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	to 150	to 150	to 150	to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Last Time Buy	Active	Active	Active	Active	Not For New Designs	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXTH22N50P (MFR Recommended)

The IXTH22N50P is the manufacturer-recommended substitute from IXYS. This part maintains the same 500V Vdss rating and TO-247-3 package configuration. The continuous drain current is rated at 22A, representing a 8.3% reduction from the IXTH24N50. The on-state resistance increases to 270 mOhm compared to 230 mOhm, resulting in higher conduction losses. Power dissipation capability increases to 350W. This part is in Active product status and is ROHS3 compliant. Selection is appropriate for applications where the 22A current rating is sufficient and the higher power dissipation capability provides thermal margin.

IXFH26N50P (Similar)

The IXFH26N50P is an IXYS alternative rated at 26A continuous drain current with 400W power dissipation. The on-state resistance matches the IXTH24N50 at 230 mOhm, providing equivalent conduction efficiency. This part operates in the HiPerFET™ and Polar series and is in Active product status. The higher current rating (26A) and power dissipation (400W) provide design margin for applications requiring sustained thermal performance. Package is TO-247-3 with full ROHS3 compliance.

STW20NM50FD (Similar)

The STW20NM50FD from STMicroelectronics is rated at 20A continuous drain current with 214W power dissipation. The on-state resistance is 250 mOhm at 10A. This part is in Active product status and is ROHS3 compliant. Selection is appropriate for applications where current requirements are 20A or lower and thermal dissipation is limited to 214W. The FDmesh™ series technology provides optimized performance for this current class.

STW28NM50N (Similar)

The STW28NM50N from STMicroelectronics is rated at 21A continuous drain current with 150W power dissipation. The on-state resistance is 158 mOhm at 10.5A, providing lower conduction losses than the IXTH24N50. This part is in Active product status and is ROHS3 compliant. Selection is appropriate for applications where current requirements are approximately 21A and thermal dissipation is constrained to 150W or lower.

STW26NM50 (Similar - Not Recommended for New Designs)

The STW26NM50 from STMicroelectronics is rated at 30A continuous drain current with 313W power dissipation. The on-state resistance is 120 mOhm at 13A, providing the lowest conduction losses among all listed substitutes. However, this part is designated as Not For New Designs. Selection should be limited to legacy system maintenance or replacement scenarios only.

STW19NM50N (Similar - Limited Current Rating)

The STW19NM50N from STMicroelectronics is rated at 14A continuous drain current with 110W power dissipation. This part provides the lowest power dissipation capability and is suitable only for applications with significantly reduced current and thermal requirements. Product status is Active and ROHS3 compliant.

Frequently Asked Questions (FAQ)

Q: Can the IXTH22N50P directly replace the IXTH24N50 in my application?

A: Direct replacement is possible if your application current requirement does not exceed 22A continuous drain current. The IXTH22N50P maintains identical 500V Vdss rating, TO-247-3 package, and gate drive voltage compatibility. Verify that the 8.3% reduction in current rating and increased on-state resistance (270 mOhm vs. 230 mOhm) do not exceed your thermal budget. The higher power dissipation rating (350W vs. 300W) provides additional thermal margin.

Q: What is the difference between TO-247 and TO-247-3 packages?

A: All listed substitutes use TO-247-3 package configuration, which is mechanically and electrically compatible with the IXTH24N50. The TO-247-3 designation indicates a three-lead through-hole package with Gate, Drain, and Source connections. Mounting footprints and lead spacing are identical across all listed parts.

Q: Why does the STW26NM50 show "Not For New Designs" status?

A: The Not For New Designs designation indicates that STMicroelectronics has transitioned this part to legacy status. While the part remains available in inventory (21,681 pieces), it is not recommended for new product development. Selection should be limited to replacement or maintenance of existing systems. For new designs, select from parts with Active product status: IXTH22N50P, IXFH26N50P, STW20NM50FD, STW28NM50N, or STW19NM50N.

Q: How do I select between IXYS and STMicroelectronics substitutes?

A: Selection depends on your application's current and thermal requirements. IXYS parts (IXTH22N50P, IXFH26N50P) maintain the same manufacturer ecosystem as the original IXTH24N50. STMicroelectronics parts (STW20NM50FD, STW28NM50N, STW19NM50N) offer alternative technology platforms with varying current and power dissipation ratings. All parts meet identical voltage (500V), package (TO-247-3), and compliance (ROHS3) requirements. Verify gate drive voltage compatibility and thermal dissipation capability for your specific circuit topology.

Q: What does the gate charge (Qg) parameter indicate for substitution?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state. The IXTH24N50 requires 190 nC at 10V gate drive. Substitutes range from 34 nC (STW19NM50N) to 270 nC (IXTH22N50P). Lower gate charge reduces switching losses and allows faster switching speeds. Higher gate charge increases driver power requirements. Verify that your gate driver circuit can supply the required charge for your selected substitute within the specified switching frequency.

Q: Are all listed substitutes RoHS3 compliant?

A: Yes. All listed substitutes—IXTH22N50P, IXFH26N50P, STW19NM50N, STW20NM50FD, STW26NM50, and STW28NM50N—are ROHS3 compliant. The original IXTH24N50 is also ROHS3 compliant. All parts have Moisture Sensitivity Level (MSL) of 1 (Unlimited) and REACH Unaffected status.

Q: What is the significance of on-state resistance (Rds On) differences?

A: On-state resistance directly affects conduction losses and heat generation. The IXTH24N50 has 230 mOhm at 12A. Substitutes range from 120 mOhm (STW26NM50) to 270 mOhm (IXTH22N50P). Lower Rds On reduces power dissipation and improves efficiency. Higher Rds On increases conduction losses. Select based on your thermal budget and efficiency requirements. Parts with lower Rds On (STW26NM50 at 120 mOhm, STW28NM50N at 158 mOhm) are preferred for high-efficiency applications.

Q: Can I use a substitute with lower current rating if my application only requires 20A?

A: Yes, if your application requires 20A or less, the STW20NM50FD (20A rating) or STW28NM50N (21A rating) are suitable. However, verify that the power dissipation rating is sufficient for your thermal environment. The STW20NM50FD provides 214W dissipation capability, while STW28NM50N provides 150W. For applications requiring sustained 20A operation with significant thermal dissipation, the STW20NM50FD is preferred due to higher power rating.

Q: What is the operating temperature range for all substitutes?

A: All listed substitutes operate to a maximum junction temperature (TJ) of 150°C. The IXTH24N50 operates from -55°C to 150°C. STMicroelectronics parts specify operation to 150°C without explicit lower temperature limit in the provided data. Verify minimum operating temperature requirements for your application. All parts are suitable for industrial temperature ranges (-40°C to 125°C ambient).

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