IXTH20N50D Equivalent & Substitute Parts

Part Overview

The IXTH20N50D is an N-Channel depletion-mode MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 20A continuous drain current at 25°C. The device is housed in a TO-247-3 through-hole package and dissipates up to 400W at the case temperature. This component is Active in product status and fully compliant with RoHS3 and REACH regulations.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges of the application circuit, maintaining compatibility with the TO-247 mounting footprint and depletion-mode FET technology.

Substiute Parts

IXTH20N50D

IXYSIn Stock: 13520IXTH20N50D Datasheet

Current PartRFQ

IXTH16N50D2

IXYSIn Stock: 1064IXTH16N50D2 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTH20N50D is determined by the following critical parameters:

Voltage Rating Compatibility: The substitute part must maintain the 500V Vdss rating to ensure safe operation in circuits designed for this voltage class.

Current Handling: The substitute part current rating must not fall below the application requirement. The IXTH16N50D2 provides 16A continuous drain current, which represents a lower current capability than the primary part.

On-Resistance (Rds On): The substitute part exhibits different on-resistance characteristics depending on gate-source voltage and drain current operating points. The IXTH16N50D2 specifies 240mOhm at 8A and 0V, compared to 330mOhm at 10A and 10V for the IXTH20N50D.

Package and Mounting: Both parts use the TO-247-3 through-hole package, ensuring mechanical and electrical footprint compatibility.

Depletion-Mode Technology: Both parts operate as depletion-mode N-Channel MOSFETs, maintaining functional equivalence in circuit topology.

Regulatory Compliance: Both parts are RoHS3 compliant, REACH unaffected, and carry identical EAR99 and HTSUS classifications.

Parameter Comparison

Engineering Selection Recommendations

Primary Part Selection: The IXTH20N50D is the specified component and remains the first choice when available. Both the primary part and substitute are Active in product status, ensuring ongoing manufacturer support and supply continuity.

Substitute Applicability: The IXTH16N50D2 is suitable as a substitute only in applications where the continuous drain current requirement does not exceed 16A. The lower current rating of the substitute part restricts its use to circuits designed for this reduced current specification.

Compliance Equivalence: Both parts maintain identical RoHS3 compliance, REACH unaffected status, and EAR99 export classification, ensuring regulatory compatibility in all markets.

Thermal Considerations: The IXTH16N50D2 exhibits higher maximum power dissipation (695W versus 400W), which may provide thermal margin in certain applications. However, this parameter does not override the current rating limitation.

Gate Voltage Constraint: The IXTH16N50D2 specifies a maximum gate-source voltage of ±20V, compared to ±30V for the IXTH20N50D. Circuit designs utilizing gate voltages above ±20V are incompatible with the substitute part.

Frequently Asked Questions (FAQ)

Q: Can the IXTH16N50D2 be used as a direct replacement for the IXTH20N50D in all applications?

A: No. The IXTH16N50D2 has a lower continuous drain current rating (16A versus 20A). Substitution is valid only when the application circuit operates at or below 16A continuous drain current. Additionally, the maximum gate-source voltage is limited to ±20V on the substitute part, compared to ±30V on the primary part.

Q: What are the key electrical differences between these two parts?

A: The primary differences are continuous drain current (20A versus 16A), on-resistance characteristics (330mOhm at 10A, 10V versus 240mOhm at 8A, 0V), gate charge (125nC at 10V versus 199nC at 5V), input capacitance (2500pF versus 5250pF), and maximum gate-source voltage (±30V versus ±20V). Both parts maintain identical 500V Vdss rating and depletion-mode operation.

Q: Are both parts available in the same package?

A: Yes. Both the IXTH20N50D and IXTH16N50D2 are housed in the TO-247-3 through-hole package, ensuring mechanical and electrical footprint compatibility on the printed circuit board.

Q: Do both parts meet the same regulatory requirements?

A: Yes. Both parts are RoHS3 compliant, REACH unaffected, and classified as EAR99 for export purposes. They carry identical HTSUS classification (8541.29.0095) and moisture sensitivity level (MSL 1 - Unlimited).

Q: What is the impact of higher input capacitance on the IXTH16N50D2?

A: The IXTH16N50D2 exhibits input capacitance of 5250pF at 25V, compared to 2500pF for the IXTH20N50D. Higher input capacitance increases gate charge requirements and may affect switching speed in high-frequency applications. Gate drive circuit design must account for this parameter difference.

Q: Can I use the IXTH16N50D2 if my circuit requires ±30V gate-source voltage?

A: No. The IXTH16N50D2 is rated for a maximum gate-source voltage of ±20V. Circuits requiring ±30V gate-source voltage must use the IXTH20N50D or an alternative part rated for ±30V operation.

Q: What is the current inventory status for these parts?

A: The IXTH20N50D has 13,488 pieces in stock. The IXTH16N50D2 has 1,017 pieces in stock. Both are listed as Active products with ongoing manufacturer support.