IXSH30N60C IGBT Equivalent & Substitute Parts

Part Overview

The IXSH30N60C is a 600V, 55A power transistor (IGBT) manufactured by IXYS in a Through Hole TO-247AD package. This component is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement. The IXSH30N60C operates across a temperature range of -55°C to 150°C and delivers 200W maximum power dissipation, suitable for medium-power switching applications requiring 600V voltage isolation.

Substiute Parts

IXSH30N60C

IXYSIn Stock: 860IXSH30N60C Datasheet

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IXXH50N60C3

IXYSIn Stock: 817IXXH50N60C3 Datasheet

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AOK30B60D1

Alpha & Omega Semiconductor Inc.In Stock: 5045AOK30B60D1 Datasheet

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STGW30V60DF

STMicroelectronicsIn Stock: 10234STGW30V60DF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXSH30N60C is determined by strict alignment of electrical and mechanical parameters. The following criteria establish valid substitution:

Primary Substitution Criteria:

• Voltage - Collector Emitter Breakdown (Max): 600V (exact match required)
• Package / Case: TO-247-3 (mechanical compatibility)
• Mounting Type: Through Hole (board-level compatibility)
• Input Type: Standard (gate drive compatibility)

Secondary Compatibility Parameters:

• Current - Collector (Ic) (Max): Equal to or greater than 55A
• Power - Max: Equal to or greater than 200W
• Operating Temperature Range: Minimum -55°C to 150°C coverage
• Vce(on) (Max): Lower or equal values indicate improved performance

The substitute parts listed below satisfy all primary criteria and maintain electrical performance within acceptable operating margins for the IXSH30N60C application envelope.

Parameter Comparison

Engineering Selection Recommendations

IXXH50N60C3 (IXYS)

The IXXH50N60C3 is an active-status substitute from the same manufacturer (IXYS). This part exceeds the IXSH30N60C in current capacity (100A vs. 55A) and power dissipation (600W vs. 200W), providing design margin for thermal and electrical stress. The IXXH50N60C3 features improved switching characteristics with lower gate charge (64nC vs. 100nC) and faster switching times (24/62ns vs. 30/90ns). Extended operating temperature range (-55°C to 175°C) supports broader environmental applications. ROHS3 compliance and active product status ensure long-term availability and supply chain stability.

AOK30B60D1 (Alpha & Omega Semiconductor Inc.)

The AOK30B60D1 provides a direct current-class substitute (60A vs. 55A) with comparable power rating (208W vs. 200W). This part delivers superior switching performance with significantly lower gate charge (34nC vs. 100nC) and faster switching times (20/58ns vs. 30/90ns), reducing switching losses in high-frequency applications. ROHS3 compliance and active product status support modern supply chain requirements. Operating temperature range matches the IXSH30N60C (-55°C to 150°C).

STGW30V60DF (STMicroelectronics)

The STGW30V60DF is a Trench Field Stop IGBT technology variant with 60A current capacity and 258W power rating. This part offers improved switching energy efficiency (233µJ off vs. 700µJ off) and includes reverse recovery time specification (53ns), beneficial for applications requiring precise switching control. Extended operating temperature range (-55°C to 175°C) and ROHS3 compliance support advanced thermal management designs. Higher gate charge (163nC) requires gate driver consideration in high-frequency switching circuits.

Frequently Asked Questions (FAQ)

Q: Can the IXXH50N60C3 directly replace the IXSH30N60C in all applications?

A: The IXXH50N60C3 satisfies all primary substitution criteria (600V voltage rating, TO-247-3 package, Through Hole mounting, Standard input type). The higher current capacity (100A vs. 55A) and power rating (600W vs. 200W) provide design margin. Verify gate driver compatibility, as the IXXH50N60C3 has lower gate charge (64nC vs. 100nC), which may require driver output impedance adjustment. Thermal management design should account for the higher power dissipation capability.

Q: What is the difference between the AOK30B60D1 and STGW30V60DF substitutes?

A: Both parts meet the 600V, 60A, TO-247-3 package requirements. The AOK30B60D1 features lower gate charge (34nC) and faster switching times (20/58ns), optimizing for high-frequency applications with reduced switching losses. The STGW30V60DF uses Trench Field Stop technology with higher gate charge (163nC) but includes reverse recovery time specification (53ns), supporting applications requiring precise switching edge control. Select based on circuit switching frequency and gate driver capabilities.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IXXH50N60C3, AOK30B60D1, and STGW30V60DF are all ROHS3 compliant. The original IXSH30N60C (obsolete status) does not specify RoHS compliance. Substitution with any of these active-status parts ensures compliance with modern environmental and regulatory requirements.

Q: Does operating temperature range affect substitution suitability?

A: The IXSH30N60C operates from -55°C to 150°C. The IXXH50N60C3 and STGW30V60DF extend to -55°C to 175°C, providing additional thermal margin. The AOK30B60D1 matches the original range (-55°C to 150°C). For applications operating near the upper temperature limit (150°C), the extended-range substitutes offer design flexibility. Verify thermal management design for the specific application environment.

Q: What packaging considerations apply to these substitutes?

A: All substitute parts use the TO-247-3 Through Hole package, matching the IXSH30N60C mechanical footprint. The IXXH50N60C3 and AOK30B60D1 are supplied in Tube packaging, while the STGW30V60DF is also Tube-packaged. Verify PCB layout compatibility and heatsink mounting requirements, as thermal performance may differ between manufacturers due to die design and package construction variations.

Q: How do switching characteristics affect circuit performance?

A: The IXSH30N60C exhibits switching times of 30ns (on) and 90ns (off) with 700µJ off-state switching energy. The AOK30B60D1 provides faster switching (20/58ns) with lower energy (240µJ off), reducing switching losses in high-frequency circuits. The IXXH50N60C3 offers intermediate performance (24/62ns, 330µJ off). The STGW30V60DF has slower switching (45/189ns) but includes reverse recovery time specification. Select based on circuit switching frequency and thermal dissipation requirements.