IXSH24N60 IGBT Equivalent & Substitute Parts

Part Overview

The IXSH24N60 is an IGBT (Insulated Gate Bipolar Transistor) rated for 600V collector-emitter breakdown voltage with a maximum collector current of 48A and 150W power dissipation. Manufactured by IXYS in the HiPerFAST™ series, this device is packaged in TO-247-3 through-hole configuration and is currently classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active product lines are necessary to maintain design continuity and ensure long-term component availability for new designs and production requirements.

Substiute Parts

IXSH24N60

IXYSIn Stock: 5725IXSH24N60 Datasheet

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IXXH30N60B3

IXYSIn Stock: 3475IXXH30N60B3 Datasheet

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IXXH30N60B3D1

IXYSIn Stock: 1919IXXH30N60B3D1 Datasheet

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STGFW20V60DF

STMicroelectronicsIn Stock: 1586STGFW20V60DF Datasheet

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STGW20V60DF

STMicroelectronicsIn Stock: 1477STGW20V60DF Datasheet

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STGW40H60DLFB

STMicroelectronicsIn Stock: 1344STGW40H60DLFB Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXSH24N60 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Voltage rating: 600V collector-emitter breakdown voltage (minimum requirement)
• Current rating: Minimum 48A collector current to match or exceed original specification
• Power dissipation: Minimum 150W to accommodate thermal requirements
• Package type: TO-247-3 through-hole configuration for mechanical compatibility
• IGBT type: PT (Punch-Through) or equivalent field-stop technology
• Input type: Standard gate drive compatibility

Secondary Compatibility Factors:

• Operating temperature range: Minimum -55°C to 150°C junction temperature
• Gate charge: Lower values indicate improved switching performance
• Switching delays: Td(on/off) characteristics for circuit timing considerations
• Vce(on) saturation voltage: Lower values indicate reduced conduction losses

Substitute parts are grouped into two categories based on performance characteristics:

Category 1 - Direct Performance Enhancement: IXXH30N60B3 and IXXH30N60B3D1 provide higher current ratings (60A), improved power handling (270W), and superior switching characteristics while maintaining 600V voltage rating and TO-247-3 packaging.

Category 2 - Functional Equivalence with Trade-offs: STGW20V60DF and STGW40H60DLFB maintain 600V voltage rating and through-hole mounting but employ Trench Field Stop technology with varying current and power ratings.

Parameter Comparison

Engineering Selection Recommendations

IXXH30N60B3 and IXXH30N60B3D1 (IXYS GenX3™/XPT™ Series)

These parts are recommended as primary substitutes for the IXSH24N60. Both devices maintain IXYS manufacturer continuity and are classified as active products with ROHS3 compliance. The IXXH30N60B3D1 variant includes specified reverse recovery time (25ns) and provides identical electrical performance to the IXXH30N60B3. These substitutes exceed the original current rating (60A vs. 48A) and power dissipation (270W vs. 150W), providing design margin. The PT IGBT type matches the original technology. Superior switching characteristics (23ns/97ns vs. 100ns/450ns) and reduced gate charge (39nC vs. 75nC) enable improved circuit efficiency. Extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C) supports broader application requirements.

STGW20V60DF (STMicroelectronics Trench Field Stop)

This substitute is suitable for applications where current requirements do not exceed 40A. The device maintains 600V voltage rating and TO-247-3 packaging with active product status and ROHS3 compliance. The Trench Field Stop technology differs from the original PT type but provides equivalent functional performance. Power rating of 167W exceeds the original 150W specification. This option is appropriate for designs with lower current demands or where STMicroelectronics component qualification is required.

STGW40H60DLFB (STMicroelectronics Trench Field Stop)

This substitute accommodates higher current applications requiring up to 80A collector current. The device is active and ROHS3 compliant with 600V voltage rating and TO-247-3 packaging. Power dissipation of 283W significantly exceeds original requirements. Higher gate charge (210nC) and switching delays require circuit design verification for timing-critical applications. This option is selected for high-current designs where the original 48A rating is insufficient.

Frequently Asked Questions (FAQ)

Q: Can the IXXH30N60B3 directly replace the IXSH24N60 in existing designs?

A: Yes. The IXXH30N60B3 maintains identical voltage rating (600V), exceeds current requirements (60A vs. 48A), and uses the same TO-247-3 package. The PT IGBT type and standard input configuration ensure gate drive compatibility. Superior switching performance and lower gate charge provide design benefits. Thermal design verification is recommended due to increased power capability.

Q: What is the difference between IXXH30N60B3 and IXXH30N60B3D1?

A: Both devices provide identical electrical performance and current ratings. The IXXH30N60B3D1 includes specified reverse recovery time (25ns), providing additional design documentation. Selection between these variants depends on documentation requirements and supplier availability.

Q: Why do the STMicroelectronics substitutes have different current ratings?

A: STGW20V60DF is rated for 40A maximum collector current, while STGW40H60DLFB is rated for 80A. These represent different product lines within the STMicroelectronics Trench Field Stop family. Selection depends on application current requirements. The STGW20V60DF is appropriate for designs matching or below the original 48A specification, while STGW40H60DLFB accommodates higher-current applications.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed (IXXH30N60B3, IXXH30N60B3D1, STGW20V60DF, and STGW40H60DLFB) are ROHS3 compliant. The original IXSH24N60 RoHS status is not specified in available documentation.

Q: What is the significance of the PT versus Trench Field Stop IGBT types?

A: Both are 600V IGBT technologies suitable for power conversion applications. PT (Punch-Through) and Trench Field Stop represent different semiconductor architectures. The IXYS substitutes maintain PT technology for design continuity. STMicroelectronics substitutes employ Trench Field Stop technology, which provides equivalent functional performance with different switching and conduction characteristics. Technology selection does not affect TO-247-3 package compatibility or gate drive requirements.

Q: Can I use STGW40H60DLFB in a design originally specified for IXSH24N60?

A: Yes, with circuit design verification. The STGW40H60DLFB maintains 600V voltage rating and TO-247-3 packaging. However, the higher current rating (80A vs. 48A), increased gate charge (210nC vs. 75nC), and different IGBT technology require evaluation of gate drive circuit performance and thermal management. The device is suitable for applications requiring higher current capability than the original specification.

Q: What is the operating temperature advantage of the substitute parts?

A: The IXSH24N60 operates from -55°C to 150°C junction temperature. All substitute parts extend the upper limit to 175°C, providing 25°C additional thermal margin. This extended range supports applications in higher-ambient-temperature environments or designs with reduced thermal management requirements.

Q: Are there inventory considerations for these substitutes?

A: Inventory availability varies. IXXH30N60B3 has 3400 units in stock, IXXH30N60B3D1 has 1873 units, STGW20V60DF has 1430 units, and STGW40H60DLFB has 1234 units available. The original IXSH24N60 has 5640 units in stock despite obsolete status. Long-term design decisions should prioritize active products (all substitutes) over the obsolete original part.