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IXGR60N60C2 IGBT Equivalent & Substitute Parts
Part Overview
The IXGR60N60C2 is an IGBT (Insulated Gate Bipolar Transistor) rated for 600V collector-emitter breakdown voltage with a maximum collector current of 75A and 250W power dissipation. This device features a PT (Punch-Through) architecture and is housed in a TO-247-3 package with ISOPLUS247™ supplier designation. The part is manufactured by IXYS and is currently classified as obsolete, making equivalent substitutes necessary for ongoing design support and procurement.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - Collector Emitter Breakdown (Max) | 600 | V |
| Current - Collector (Ic) (Max) | 75 | A |
| Current - Collector Pulsed (Icm) | 300 | A |
| Power - Max | 250 | W |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A | V |
| Gate Charge | 140 | nC |
| Switching Energy (off) | 490 | µJ |
| Td (on/off) @ 25°C | 18ns/95ns | ns |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package / Case | TO-247-3 | - |
| Mounting Type | Through Hole | - |
Substitute Part Grouping Explanation
Substitution of the IXGR60N60C2 is determined by the following critical parameters:
Voltage Rating: All substitute parts must maintain the 600V collector-emitter breakdown voltage specification to ensure safe operation within the same circuit topology.
Current Rating: The maximum collector current (Ic) must be equal to or greater than 75A. Substitute parts with 80A ratings provide adequate margin while maintaining compatibility.
Package Type: All substitutes must use the TO-247-3 through-hole package to ensure mechanical and thermal compatibility with existing PCB layouts and heatsink mounting configurations.
Input Type: All substitutes maintain Standard input type configuration, ensuring gate drive circuit compatibility.
Operating Temperature Range: Substitute parts must support the -55°C to 150°C operating temperature range or exceed it.
The four substitute parts identified (FGH40N60SMD-F085, HGTG30N60A4D, HGTG40N60A4, and NGTB40N60L2WG) meet these core substitution criteria while offering varying levels of performance enhancement and compliance certifications.
Parameter Comparison
| Parameter | IXGR60N60C2 | FGH40N60SMD-F085 | HGTG30N60A4D | HGTG40N60A4 | NGTB40N60L2WG |
|---|---|---|---|---|---|
| Manufacturer | IXYS | onsemi | onsemi | onsemi | onsemi |
| Voltage - Collector Emitter Breakdown (Max) | 600V | 600V | 600V | 600V | 600V |
| Current - Collector (Ic) (Max) | 75A | 80A | 75A | 75A | 80A |
| Current - Collector Pulsed (Icm) | 300A | 120A | 240A | 300A | 160A |
| Power - Max | 250W | 349W | 463W | 625W | 417W |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A | 2.5V @ 15V, 40A | 2.6V @ 15V, 30A | 2.7V @ 15V, 40A | 2.61V @ 15V, 40A |
| Gate Charge | 140nC | 180nC | 225nC | 350nC | 228nC |
| Switching Energy (off) | 490µJ | 300µJ | 240µJ | 370µJ | 280µJ |
| Td (on/off) @ 25°C | 18ns/95ns | 18ns/110ns | 25ns/150ns | 25ns/145ns | 98ns/213ns |
| Operating Temperature Range | -55 to 150°C | -55 to 175°C | -55 to 150°C | -55 to 150°C | -55 to 175°C |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Product Status | Obsolete | Active | Active | Obsolete | Obsolete |
| RoHS Status | Not specified | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
FGH40N60SMD-F085 (onsemi): This part is the preferred substitute for new designs and ongoing procurement. It maintains active product status, provides ROHS3 compliance, and includes AEC-Q101 automotive qualification. The 80A current rating exceeds the original 75A specification, and the 349W power rating provides adequate thermal margin. The switching energy off-time (300µJ) is lower than the original part, potentially improving efficiency. This device is suitable for direct replacement in applications where automotive-grade reliability is required.
HGTG30N60A4D (onsemi): This part is active and ROHS3 compliant, offering the highest power dissipation rating (463W) among the substitutes. It matches the original 75A current specification exactly and maintains the same operating temperature range. The lower switching energy values (280µJ on, 240µJ off) indicate improved switching performance. This part is suitable for applications requiring enhanced thermal performance or where power dissipation margins are critical.
HGTG40N60A4 (onsemi): This part is obsolete but remains available in inventory. It provides the highest power rating (625W) and matches the original pulsed current specification (300A) exactly. ROHS3 compliance is confirmed. Due to its obsolete status, this part should be considered only for legacy system support or where existing designs are locked to this specific device.
NGTB40N60L2WG (onsemi): This part is obsolete with limited inventory availability (717 pcs). It features Trench Field Stop architecture and supports extended operating temperature to 175°C. The higher gate charge (228nC) and significantly longer switching times (98ns/213ns) indicate different switching characteristics that may require gate drive circuit adjustment. This part is suitable only for legacy applications where the specific Trench Field Stop architecture is required.
Frequently Asked Questions (FAQ)
Q: Can the FGH40N60SMD-F085 directly replace the IXGR60N60C2 without circuit modifications?
A: Yes. The FGH40N60SMD-F085 maintains the same 600V voltage rating, exceeds the 75A current requirement at 80A, uses the identical TO-247-3 package, and supports the same -55°C to 150°C operating temperature range. The gate charge increase from 140nC to 180nC is within typical gate drive circuit tolerances. No circuit modifications are required for direct substitution.
Q: What is the primary advantage of the HGTG30N60A4D over the original IXGR60N60C2?
A: The HGTG30N60A4D provides significantly higher power dissipation capability (463W versus 250W), lower switching energy values, and active product status with ROHS3 compliance. These characteristics make it suitable for applications where thermal performance or efficiency improvements are desired while maintaining the same electrical specifications.
Q: Why is the NGTB40N60L2WG not recommended as a primary substitute?
A: The NGTB40N60L2WG exhibits substantially different switching characteristics, with gate charge of 228nC and switching times of 98ns/213ns compared to the original 140nC and 18ns/95ns. These differences require gate drive circuit redesign and timing analysis. Additionally, the part is obsolete with limited inventory. It should be considered only for legacy applications where the Trench Field Stop architecture is specifically required.
Q: Are all substitute parts qualified for automotive applications?
A: Only the FGH40N60SMD-F085 carries explicit AEC-Q101 automotive qualification. The other substitutes are ROHS3 compliant but do not specify automotive qualification. For automotive applications, the FGH40N60SMD-F085 is the recommended choice.
Q: What is the impact of higher gate charge on circuit design?
A: Gate charge affects the gate drive circuit's switching speed and power consumption. The substitute parts range from 140nC (original) to 350nC (HGTG40N60A4). Higher gate charge requires longer gate drive pulse widths or higher gate drive current to achieve the same switching speed. Most modern gate drive circuits accommodate this variation without modification, but circuit simulation is recommended for high-frequency applications above 50kHz.
Q: Can the HGTG40N60A4 be used despite its obsolete status?
A: The HGTG40N60A4 is available in inventory (16,100 pcs) and is ROHS3 compliant. It can be used for legacy system support or where existing designs are locked to this device. However, for new designs, the active-status FGH40N60SMD-F085 is preferred to ensure long-term supply chain continuity.
Q: What thermal considerations apply when substituting these parts?
A: All substitute parts use the same TO-247-3 package and through-hole mounting configuration, ensuring identical thermal interface characteristics with heatsinks. However, the power dissipation ratings vary significantly (250W to 625W). Thermal design should be based on the actual power dissipation in the application, not the device rating. Lower switching energy in newer parts (FGH40N60SMD-F085, HGTG30N60A4D) may reduce thermal load compared to the original design.
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