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IXGP16N60B2 Equivalent & Substitute Parts
Part Overview
The IXGP16N60B2 is an IGBT (Insulated Gate Bipolar Transistor) rated for 600V collector-emitter breakdown voltage with 40A maximum collector current and 150W power dissipation. Manufactured by IXYS in the HiPerFAST™ series, this component is packaged in a Through Hole TO-220-3 configuration. The part is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Equivalent parts must maintain electrical compatibility within the 600V voltage class while accommodating the 40A current specification and standard gate drive characteristics.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - Collector Emitter Breakdown (Max) | 600 | V |
| Current - Collector (Ic) (Max) | 40 | A |
| Power - Max | 150 | W |
| Vce(on) (Max) | 1.95 | V @ 15V, 12A |
| Gate Charge | 24 | nC |
| Mounting Type | Through Hole | - |
| Package / Case | TO-220-3 | - |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Input Type | Standard | - |
Substitute Part Grouping Explanation
Substitution of the IXGP16N60B2 is determined by the following critical electrical and mechanical parameters:
Primary Substitution Criteria:
- Voltage - Collector Emitter Breakdown: 600V (exact match required)
- Current - Collector (Ic) (Max): 40A (exact match required)
- Mounting Type: Through Hole (exact match required)
- Package / Case: TO-220-3 (exact match required)
- Input Type: Standard (exact match required)
Secondary Compatibility Parameters:
- Vce(on) (Max): Must not exceed 1.95V at rated test conditions to maintain thermal performance equivalence
- Gate Charge: Must remain within acceptable range for existing gate drive circuits (24 nC baseline)
- Operating Temperature Range: Must support -55°C to 150°C minimum
Substitute parts are classified into two categories:
Direct Equivalent: IXGP20N120B3 operates at higher voltage (1200V) and is suitable only for applications where voltage derating is acceptable. This part is not a true equivalent due to voltage class mismatch.
Functional Equivalents: IGP20N60H3XKSA1, IKP20N60H3XKSA1, and IKP20N60TXKSA1 (Infineon Technologies) maintain the 600V voltage class and 40A current rating with TO-220-3 packaging. STGP15H60DF (STMicroelectronics) operates at 30A maximum current and is suitable for applications with reduced current requirements. STGP19NC60HD (STMicroelectronics) matches the 600V/40A specification with TO-220-3 packaging.
Parameter Comparison
| Parameter | IXGP16N60B2 | IGP20N60H3XKSA1 | IKP20N60H3XKSA1 | IKP20N60TXKSA1 | STGP15H60DF | STGP19NC60HD | IXGP20N120B3 |
|---|---|---|---|---|---|---|---|
| Voltage - Collector Emitter Breakdown (Max) | 600V | 600V | 600V | 600V | 600V | 600V | 1200V |
| Current - Collector (Ic) (Max) | 40A | 40A | 40A | 40A | 30A | 40A | 36A |
| Power - Max | 150W | 170W | 170W | 166W | 115W | 130W | 180W |
| Vce(on) (Max) | 1.95V @ 15V, 12A | 2.4V @ 15V, 20A | 2.4V @ 15V, 20A | 2.05V @ 15V, 20A | 2V @ 15V, 15A | 2.5V @ 15V, 12A | 3.1V @ 15V, 16A |
| Gate Charge | 24nC | 120nC | 120nC | 120nC | 81nC | 53nC | 51nC |
| Td (on/off) @ 25°C | 18ns/73ns | 16ns/194ns | 16ns/194ns | 18ns/199ns | 24.5ns/118ns | 25ns/97ns | 16ns/150ns |
| Operating Temperature Range | -55 to 150°C | -40 to 175°C | -40 to 175°C | -40 to 175°C | -55 to 175°C | -55 to 150°C | -55 to 150°C |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Product Status | Obsolete | Active | Active | Active | Active | Active | Active |
| RoHS Status | Not specified | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
Primary Substitutes (600V/40A Class):
The Infineon Technologies parts IGP20N60H3XKSA1, IKP20N60H3XKSA1, and IKP20N60TXKSA1 are active products with ROHS3 compliance and extended operating temperature ranges (-40°C to 175°C). These components maintain the 600V voltage class and 40A current specification with TO-220-3 packaging. All three are suitable for direct substitution in applications where gate charge tolerance and switching timing differences are acceptable. IKP20N60TXKSA1 offers the lowest Vce(on) at 2.05V, providing improved thermal performance compared to the original 1.95V specification.
The STMicroelectronics STGP19NC60HD operates at 600V/40A with TO-220-3 packaging and ROHS3 compliance. This part exhibits lower gate charge (53nC) and faster switching times compared to the Infineon alternatives, making it suitable for applications with tighter switching requirements.
Secondary Substitute (600V/30A Class):
The STMicroelectronics STGP15H60DF is rated for 600V/30A and is applicable only to applications where the collector current requirement does not exceed 30A. This part offers the lowest power dissipation (115W) and is suitable for reduced-current applications.
Not Recommended:
The IXGP20N120B3 operates at 1200V and is not recommended as a direct substitute due to voltage class mismatch. While higher voltage rating provides design margin, the increased Vce(on) (3.1V) and gate charge (51nC) result in higher power dissipation and different gate drive requirements.
All recommended substitutes are active products with current manufacturing status and full ROHS3 compliance, ensuring long-term availability and regulatory compliance.
Frequently Asked Questions (FAQ)
Q: Can the IXGP20N120B3 be used as a substitute for the IXGP16N60B2?
A: The IXGP20N120B3 is not a direct substitute. While both are IXYS products in TO-220-3 packaging, the IXGP20N120B3 operates at 1200V, which is outside the 600V specification of the original part. The higher voltage rating and increased Vce(on) (3.1V versus 1.95V) result in different thermal and electrical characteristics. Use only if the application circuit is designed for 1200V operation.
Q: What are the key differences between the Infineon and STMicroelectronics substitutes?
A: The Infineon parts (IGP20N60H3XKSA1, IKP20N60H3XKSA1, IKP20N60TXKSA1) feature higher gate charge (120nC) and longer switching times compared to the STMicroelectronics STGP19NC60HD (53nC gate charge). The Infineon parts are Trench Field Stop technology, while the STMicroelectronics part uses PowerMESH™ technology. Both maintain 600V/40A ratings and TO-220-3 packaging. Selection depends on gate drive circuit capability and switching frequency requirements.
Q: Is the STGP15H60DF suitable for all applications using the IXGP16N60B2?
A: No. The STGP15H60DF is rated for 30A maximum collector current, compared to the 40A specification of the IXGP16N60B2. This part is suitable only for applications where the actual operating current does not exceed 30A. Verify application current requirements before selection.
Q: Are all substitute parts RoHS compliant?
A: Yes. All recommended substitute parts are ROHS3 compliant. The original IXGP16N60B2 RoHS status is not specified in available documentation.
Q: What is the impact of higher gate charge in substitute parts?
A: Higher gate charge (120nC in Infineon parts versus 24nC in the original) requires increased gate drive current and energy. Existing gate drive circuits designed for the IXGP16N60B2 must be evaluated for compatibility. Gate drive voltage and current capability must be verified before substitution.
Q: Can substitute parts operate at the same temperature range as the original?
A: Most substitutes support extended temperature ranges. The Infineon parts operate from -40°C to 175°C (versus -55°C to 150°C for the original). The STMicroelectronics STGP15H60DF and STGP19NC60HD support -55°C to 175°C and -55°C to 150°C respectively. Verify application temperature requirements for final selection.
Q: Are all substitute parts available in the same packaging?
A: Yes. All substitute parts are packaged in TO-220-3 configuration, maintaining mechanical compatibility with the original IXGP16N60B2. Mounting and thermal interface requirements remain unchanged.
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