IXFX26N90 N-Channel 900V 26A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFX26N90 is an N-Channel 900V 26A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a TO-247-3 (PLUS247™-3) through-hole package. This device is rated for 560W maximum power dissipation and operates across a temperature range of -55°C to 150°C. The part is designated as "Not For New Designs," indicating it has been superseded in the manufacturer's product roadmap. Identifying equivalent and substitute parts is necessary for applications requiring continued supply, design flexibility, or performance optimization within compatible electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	900	V
Continuous Drain Current (Id) @ 25°C	26	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	300 mOhm @ 13A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	5	V @ 8mA
Gate Charge (Qg Max) @ Vgs	240	nC @ 10V
Maximum Gate Voltage (Vgs Max)	±20	V
Input Capacitance (Ciss Max) @ Vds	10800	pF @ 25V
Power Dissipation (Max)	560	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
Technology	MOSFET (Metal Oxide)
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IXFX26N90 is determined by the following critical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss) must be equal to or greater than 900V
Continuous Drain Current (Id) must be equal to or greater than 26A at 25°C
On-State Resistance (Rds On) must not exceed the original specification to maintain thermal performance
Gate Threshold Voltage (Vgs(th)) must be compatible with existing gate drive circuitry
Maximum Gate Voltage (Vgs Max) must accommodate the drive voltage used in the application
Operating Temperature Range must span -55°C to 150°C minimum

Mechanical Compatibility Criteria:

Package must be TO-247-3 (through-hole mounting)
Pinout must be compatible with MOSFET standard configurations

Compliance Criteria:

RoHS3 compliance required
Moisture Sensitivity Level (MSL) of 1 (Unlimited) preferred

The substitute parts listed below meet these criteria within the allowed electrical and mechanical parameters for this product category.

Parameter Comparison

Parameter	IXFX26N90	IXFX40N90P	C2M0280120D	C3M0280090D	STW23N85K5
Manufacturer	IXYS	IXYS	Wolfspeed, Inc.	Wolfspeed, Inc.	STMicroelectronics
Vdss (V)	900	900	1200	900	850
Id @ 25°C (A)	26	40	10	11.5	19
Rds On Max (mOhm)	300 @ 13A, 10V	230 @ 20A, 10V	370 @ 6A, 20V	360 @ 7.5A, 15V	275 @ 9.5A, 10V
Vgs(th) Max (V)	5 @ 8mA	6.5 @ 1mA	2.8 @ 1.25mA (Typ)	3.5 @ 1.2mA	5 @ 100µA
Vgs Max (V)	±20	±30	+25, -10	+18, -8	±30
Qg Max (nC)	240 @ 10V	230 @ 10V	20.4 @ 20V	9.5 @ 15V	38 @ 10V
Ciss Max (pF)	10800 @ 25V	14000 @ 25V	259 @ 1000V	150 @ 600V	1650 @ 100V
Power Dissipation Max (W)	560	960	62.5	54	250
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	SiCFET (Silicon Carbide)	SiCFET (Silicon Carbide)	MOSFET (Metal Oxide)
Product Status	Not For New Designs	Active	Not For New Designs	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFX40N90P (IXYS)

The IXFX40N90P is a direct platform upgrade within the IXYS HiPerFET™ series. It maintains the same 900V Vdss rating and TO-247-3 package as the IXFX26N90 while providing 40A continuous drain current, exceeding the original 26A specification. The device exhibits lower on-state resistance (230 mOhm vs. 300 mOhm) and higher power dissipation capability (960W vs. 560W). Gate charge remains comparable (230 nC vs. 240 nC), ensuring compatible gate drive requirements. The IXFX40N90P carries Active product status, confirming ongoing manufacturer support and availability. This part is suitable for applications requiring direct replacement with enhanced current handling and thermal performance.

C3M0280090D (Wolfspeed, Inc.)

The C3M0280090D is a Silicon Carbide MOSFET (SiCFET) from the Wolfspeed C3M™ series, matching the 900V Vdss rating of the IXFX26N90. While the continuous drain current is lower at 11.5A, the device offers significantly reduced gate charge (9.5 nC vs. 240 nC) and lower input capacitance (150 pF vs. 10800 pF), resulting in faster switching characteristics and reduced gate drive power requirements. The C3M0280090D is rated Active and carries ROHS3 compliance. This part is applicable to applications where the 11.5A current rating is sufficient and where reduced switching losses and improved efficiency are prioritized.

STW23N85K5 (STMicroelectronics)

The STW23N85K5 is an N-Channel MOSFET from the STMicroelectronics SuperMESH5™ series with an 850V Vdss rating and 19A continuous drain current. While the voltage rating is 50V lower than the IXFX26N90, the device provides comparable on-state resistance (275 mOhm vs. 300 mOhm) and operates within the same temperature range. The STW23N85K5 carries Active product status and ROHS3 compliance. This part is suitable for applications where the 850V voltage margin is acceptable and where the 19A current rating meets system requirements.

C2M0280120D (Wolfspeed, Inc.)

The C2M0280120D is a Silicon Carbide MOSFET from the Wolfspeed Z-FET™ series with a 1200V Vdss rating, providing 300V additional voltage margin over the IXFX26N90. However, the continuous drain current is limited to 10A, and power dissipation is significantly reduced to 62.5W. The device exhibits very low gate charge (20.4 nC) and minimal input capacitance (259 pF), enabling high-frequency operation. The C2M0280120D is designated Not For New Designs. This part is applicable only to applications where the 10A current rating is sufficient and where the higher voltage rating and reduced switching losses provide system-level benefits.

Frequently Asked Questions (FAQ)

Q: Can the IXFX40N90P directly replace the IXFX26N90 in my application?

A: The IXFX40N90P is mechanically and electrically compatible with the IXFX26N90. Both devices share the same 900V Vdss rating, TO-247-3 package, and similar gate drive characteristics. The IXFX40N90P provides higher current capability (40A vs. 26A) and lower on-state resistance, making it suitable for direct replacement. No circuit modifications are required.

Q: What is the difference between MOSFET and SiCFET technologies in these substitutes?

A: The IXFX26N90, IXFX40N90P, and STW23N85K5 use traditional Metal Oxide MOSFET technology. The C2M0280120D and C3M0280090D use Silicon Carbide (SiC) technology, which offers lower gate charge, reduced input capacitance, and faster switching characteristics. SiC devices typically exhibit lower switching losses but may require different gate drive optimization.

Q: Why does the C2M0280120D have a higher voltage rating (1200V) but lower current rating (10A)?

A: Voltage and current ratings are independent design parameters. The C2M0280120D is optimized for high-voltage applications with moderate current requirements. The higher voltage rating provides additional safety margin in high-voltage systems but does not increase current capability. Current rating is determined by die size, thermal design, and on-state resistance characteristics.

Q: Is the STW23N85K5 suitable if my application operates at 900V?

A: The STW23N85K5 has an 850V Vdss rating, which is 50V lower than the IXFX26N90. While this provides reduced voltage margin, it may be acceptable depending on your system's maximum operating voltage and transient overvoltage conditions. Verify that your application's peak voltage does not exceed 850V under all operating and fault conditions.

Q: What are the implications of using a substitute with lower gate charge?

A: Lower gate charge (Qg) reduces the energy required to switch the device on and off, decreasing gate drive power consumption and enabling faster switching. Devices like the C3M0280090D (9.5 nC) and C2M0280120D (20.4 nC) require significantly less gate drive current compared to the IXFX26N90 (240 nC). This may allow use of lower-power gate drivers and can improve overall system efficiency.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all substitute parts listed (IXFX40N90P, C2M0280120D, C3M0280090D, and STW23N85K5) are ROHS3 compliant, matching the compliance status of the IXFX26N90.

Q: What does "Not For New Designs" mean for the IXFX26N90 and C2M0280120D?

A: "Not For New Designs" indicates that the manufacturer has superseded these parts in their product roadmap. While existing inventory may be available, these parts are not recommended for new circuit designs. The IXFX40N90P and C3M0280090D carry Active status, indicating ongoing manufacturer support and recommended use in new designs.

Q: Can I use the C3M0280090D if my application requires 26A continuous current?

A: No. The C3M0280090D is rated for 11.5A continuous drain current, which is insufficient for applications requiring 26A. Using this device in a 26A application would result in thermal stress, reduced device lifetime, and potential failure. Select a substitute with current rating equal to or greater than your application requirement.

Q: What is the significance of input capacitance (Ciss) differences among these parts?

A: Input capacitance affects gate drive circuit design and switching speed. The IXFX26N90 has 10800 pF at 25V, while the C3M0280090D has only 150 pF at 600V. Lower input capacitance reduces the charge required for switching and enables faster transitions. However, lower Ciss may require gate drive circuit adjustments to prevent overshoot and ringing.

Q: Are the operating temperature ranges identical across all substitute parts?

A: All substitute parts operate across the -55°C to 150°C temperature range, matching the IXFX26N90 specification. This ensures thermal compatibility in applications with wide operating temperature requirements.

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