IXFT74N20 Equivalent & Substitute Parts

Part Overview

The IXFT74N20 is an N-Channel MOSFET rated for 200V drain-to-source voltage with 74A continuous drain current at 25°C. This device is manufactured by IXYS in the HiPerFET™ series and is packaged in a TO-268AA surface mount configuration. The IXFT74N20 is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while preserving the same physical package footprint.

Substiute Parts

IXFT74N20

IXYSIn Stock: 1170IXFT74N20 Datasheet

Current PartRFQ

IXTT82N25P

IXYSIn Stock: 971IXTT82N25P Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFT74N20 is determined by the following critical parameters:

Electrical Compatibility Requirements:

• Drain-to-source voltage (Vdss) must equal or exceed 200V
• Continuous drain current (Id) must equal or exceed 74A at 25°C
• On-state resistance (Rds On) must not exceed specified maximum values at rated gate voltage
• Gate threshold voltage (Vgs(th)) must be compatible with existing drive circuitry
• Operating temperature range must encompass -55°C to 150°C

Physical Compatibility Requirements:

• Package type must be TO-268AA (D³Pak with 2 Leads + Tab)
• Surface mount configuration required
• Pin configuration must be identical

Functional Compatibility:

• N-Channel MOSFET technology
• Metal oxide gate structure

The IXTT82N25P meets these substitution criteria through equivalent package geometry, compatible electrical specifications, and active product status.

Parameter Comparison

Engineering Selection Recommendations

The IXTT82N25P is a direct substitute for the IXFT74N20 based on the following engineering criteria:

Electrical Superiority: The IXTT82N25P provides higher voltage rating (250V vs. 200V), higher continuous drain current (82A vs. 74A), and greater power dissipation capability (500W vs. 360W). These enhanced specifications ensure the substitute part operates within safe margins in applications designed for the original IXFT74N20.

Package Compatibility: Both devices utilize the TO-268AA package configuration, ensuring identical PCB footprint and thermal interface characteristics. Pin configuration and lead spacing are equivalent.

Product Status and Compliance: The IXTT82N25P holds active product status, ensuring long-term availability and supply chain continuity. The substitute part is RoHS3 compliant and REACH unaffected, meeting current regulatory requirements. The IXFT74N20, classified as obsolete, presents procurement risk and limited future availability.

Thermal Performance: The IXTT82N25P demonstrates superior thermal characteristics with increased power dissipation rating, providing additional thermal margin in applications with elevated ambient temperatures or high switching frequencies.

Frequently Asked Questions (FAQ)

Q: Can the IXTT82N25P directly replace the IXFT74N20 without circuit modifications?

A: Yes. The IXTT82N25P is electrically and physically compatible with the IXFT74N20. Both devices share identical package geometry (TO-268AA), pin configuration, and gate drive voltage requirements (10V). The substitute part's higher voltage and current ratings provide additional design margin without requiring circuit changes.

Q: What are the key differences between these two MOSFETs?

A: The IXTT82N25P exceeds the IXFT74N20 in three primary specifications: drain-to-source voltage (250V vs. 200V), continuous drain current (82A vs. 74A), and power dissipation (500W vs. 360W). The IXTT82N25P also features lower gate charge (142 nC vs. 280 nC) and reduced input capacitance (4800 pF vs. 5400 pF), resulting in faster switching characteristics.

Q: Is the IXTT82N25P suitable for applications originally designed for the IXFT74N20?

A: Yes. The substitute part's enhanced electrical specifications ensure compatibility with all applications designed for the original device. The higher voltage rating provides additional safety margin, and the increased current capacity accommodates design variations without performance degradation.

Q: What is the significance of the gate charge difference between these devices?

A: The IXTT82N25P exhibits lower gate charge (142 nC vs. 280 nC), indicating faster switching response and reduced gate drive power requirements. This characteristic benefits high-frequency switching applications and reduces driver circuit stress.

Q: Are there any thermal considerations when substituting the IXTT82N25P for the IXFT74N20?

A: The IXTT82N25P provides superior thermal performance with a 500W power dissipation rating compared to the IXFT74N20's 360W rating. Both devices operate across the identical temperature range (-55°C to 150°C). The substitute part's enhanced thermal capability provides additional margin in thermally constrained applications.

Q: What is the packaging difference between these MOSFETs?

A: Both devices are packaged in TO-268AA (D³Pak with 2 Leads + Tab) surface mount configuration. The physical dimensions, lead spacing, and thermal interface characteristics are identical, ensuring direct PCB compatibility without layout modifications.

Q: Why is the IXFT74N20 classified as obsolete?

A: The IXFT74N20 is no longer in active production. The IXTT82N25P represents the current generation equivalent from IXYS, offering improved specifications and long-term availability assurance.