IXFT6N100Q Equivalent & Substitute Parts

Part Overview

The IXFT6N100Q is an N-Channel MOSFET rated for 1000 V drain-to-source voltage with 6 A continuous drain current at 25°C. Manufactured by IXYS as part of the HiPerFET™ series, this device is housed in a TO-268AA surface mount package and delivers 180 W maximum power dissipation. The part is currently classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance.

Substiute Parts

IXFT6N100Q

IXYSIn Stock: 768IXFT6N100Q Datasheet

Current PartRFQ

IXFT15N100Q3

IXYSIn Stock: 1231IXFT15N100Q3 Datasheet

MFR RecommendedRFQ

STH6N95K5-2

STMicroelectronicsIn Stock: 19308STH6N95K5-2 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFT6N100Q is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss) rating must equal or exceed 1000 V
• Continuous drain current (Id) must meet or exceed 6 A at 25°C
• On-state resistance (Rds On) must not exceed the application's thermal and efficiency requirements
• Gate charge (Qg) must be compatible with existing gate drive circuitry
• Operating temperature range must span -55°C to 150°C
• Package type must be compatible with PCB layout and thermal management design

Secondary Compatibility Factors:

• N-Channel MOSFET technology (Metal Oxide)
• Surface mount configuration
• RoHS3 compliance and MSL Level 1 rating

The IXFT15N100Q3 qualifies as a manufacturer-recommended upgrade, maintaining identical voltage rating and package while providing enhanced current handling and reduced on-state resistance. The STH6N95K5-2 functions as a similar alternative with comparable current and voltage specifications, though package geometry differs.

Parameter Comparison

Engineering Selection Recommendations

IXFT15N100Q3 (Manufacturer-Recommended Upgrade)

The IXFT15N100Q3 is the primary substitute for the obsolete IXFT6N100Q. Both devices maintain identical 1000 V Vdss rating and TO-268AA package configuration, ensuring direct mechanical and thermal compatibility. The IXFT15N100Q3 provides superior electrical performance with 15 A continuous drain current versus 6 A, reduced on-state resistance (1.05 Ohm versus 1.9 Ohm), and increased power dissipation capability (690 W versus 180 W). The device is classified as Active product status with full RoHS3 compliance and MSL Level 1 rating. Gate charge increases from 48 nC to 64 nC, requiring verification of gate drive circuit capability for applications with marginal drive current budgets.

STH6N95K5-2 (Alternative Substitute)

The STH6N95K5-2 from STMicroelectronics functions as an alternative substitute when IXYS HiPerFET™ devices are unavailable. This device matches the 6 A continuous drain current specification and maintains the -55°C to 150°C operating temperature range. The Vdss rating of 950 V is 50 V lower than the original specification, requiring circuit analysis to confirm adequate margin for peak voltage transients. On-state resistance of 1.25 Ohm is lower than the IXFT6N100Q, improving efficiency. Gate charge of 13 nC is significantly reduced, enabling faster switching with lower gate drive power. The H2PAK-2 package differs from TO-268AA, necessitating PCB layout modification and thermal management reassessment. The device is Active status with RoHS3 compliance and MSL Level 1 rating.

Frequently Asked Questions (FAQ)

Q: Can the IXFT15N100Q3 be used as a direct replacement for the IXFT6N100Q?

A: Yes. Both devices share identical 1000 V Vdss rating, 6 A minimum continuous drain current capability, and TO-268AA package configuration. The IXFT15N100Q3 provides enhanced performance with higher current rating and lower on-state resistance. No PCB layout changes are required. Gate drive circuit verification is recommended due to increased gate charge (64 nC versus 48 nC).

Q: What is the primary limitation of using the STH6N95K5-2 as a substitute?

A: The STH6N95K5-2 has a Vdss rating of 950 V compared to the original 1000 V specification. Applications operating near peak voltage limits require circuit analysis to confirm adequate safety margin. Additionally, the H2PAK-2 package differs from TO-268AA, requiring PCB layout and thermal design modifications.

Q: Are all three devices RoHS3 compliant?

A: Yes. The IXFT6N100Q, IXFT15N100Q3, and STH6N95K5-2 are all RoHS3 compliant with MSL Level 1 (Unlimited) moisture sensitivity rating.

Q: How does gate charge affect device selection?

A: Gate charge determines the energy required to switch the MOSFET on and off. The IXFT6N100Q requires 48 nC, the IXFT15N100Q3 requires 64 nC, and the STH6N95K5-2 requires 13 nC. Higher gate charge demands greater gate drive current or longer switching times. Applications with limited gate drive capability may require the STH6N95K5-2 despite package differences.

Q: What is the impact of different package types on thermal management?

A: The IXFT6N100Q and IXFT15N100Q3 use TO-268AA packaging with identical thermal characteristics. The STH6N95K5-2 uses H2PAK-2 packaging, which has different thermal resistance and PCB footprint. Thermal analysis specific to the H2PAK-2 package is required when substituting the STH6N95K5-2.

Q: Is the IXFT15N100Q3 available in the same packaging options as the IXFT6N100Q?

A: The IXFT15N100Q3 is supplied in Tube packaging, while the IXFT6N100Q was supplied in standard packaging. Both use the TO-268AA package type. Verify packaging format compatibility with assembly and handling requirements.

Q: Can the STH6N95K5-2 be used in high-voltage applications requiring the full 1000 V rating?

A: The STH6N95K5-2 is rated for 950 V Vdss. Applications requiring the full 1000 V rating must use either the IXFT6N100Q or IXFT15N100Q3. For applications with 950 V or lower peak voltage requirements, the STH6N95K5-2 is suitable.