IXFT24N50Q N-Channel 500V 24A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFT24N50Q is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 24A continuous drain current at 25°C. This device is part of the HiPerFET™ Q Class series and is housed in a TO-268AA surface mount package. The part is currently active in production with 955 units in stock.

Substitute parts are identified when equivalent electrical and mechanical parameters allow direct replacement in circuit applications. Substitution becomes necessary when the primary part reaches end-of-life status, inventory constraints occur, or design requirements necessitate alternative performance characteristics within the same voltage and package class.

Substiute Parts

IXFT24N50Q

IXYSIn Stock: 1003IXFT24N50Q Datasheet

Current PartRFQ

IXFT30N50Q3

IXYSIn Stock: 868IXFT30N50Q3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFT24N50Q is based on the following electrical and mechanical criteria:

Voltage Class Compatibility: Both the main part and substitute must maintain the same 500V drain-to-source voltage rating to ensure circuit protection and reliability in high-voltage applications.

Package Compatibility: The TO-268AA surface mount package (D³Pak with 2 leads plus tab) is the mechanical constraint. Substitute parts must use identical package geometry to ensure PCB footprint compatibility without redesign.

Current Rating Consideration: While the IXFT24N50Q is rated for 24A continuous drain current, substitute parts may have higher current ratings. Higher current capability does not prevent substitution; it represents an upgrade path within the same voltage class and package.

Thermal Performance: Power dissipation ratings and thermal characteristics are provided for design verification. Substitutes with equal or higher power dissipation ratings are acceptable.

Gate Drive Characteristics: Gate charge, threshold voltage, and input capacitance parameters determine gate driver compatibility. Substitutes within the same series maintain compatible drive voltage requirements (10V nominal).

Compliance and Status: All substitute parts must maintain active product status and equivalent RoHS3 compliance, REACH unaffected status, and MSL 1 rating.

Parameter Comparison

Engineering Selection Recommendations

IXFT30N50Q3 as Direct Substitute:

The IXFT30N50Q3 is a qualified substitute for the IXFT24N50Q based on the following engineering criteria:

Both devices share identical voltage ratings (500V Vdss), identical package geometry (TO-268AA), and identical operating temperature range (-55°C to 150°C). Both maintain active product status with equivalent compliance certifications: ROHS3 compliant, REACH unaffected, and MSL 1 rating.

The IXFT30N50Q3 provides enhanced performance characteristics. The continuous drain current rating increases from 24A to 30A, and power dissipation capability increases from 300W to 690W. These improvements represent an upgrade path suitable for applications requiring higher current handling or thermal margin.

Gate drive characteristics differ slightly. The IXFT30N50Q3 exhibits lower gate charge (62 nC versus 95 nC) and lower input capacitance (3200 pF versus 3900 pF), resulting in faster switching response and reduced gate driver power requirements. The gate threshold voltage increases from 4.5V to 6.5V, which remains within standard gate driver output ranges.

On-state resistance improves in the IXFT30N50Q3 (200 mOhm at 15A versus 230 mOhm at 12A), reducing conduction losses in high-current applications.

Both devices are manufactured by IXYS within the HiPerFET™ series, ensuring consistent quality and reliability standards.

Frequently Asked Questions (FAQ)

Q: Can the IXFT30N50Q3 replace the IXFT24N50Q in existing circuit designs without PCB modification?

A: Yes. Both devices use the TO-268AA package with identical pinout and footprint geometry. No PCB redesign is required for mechanical compatibility.

Q: What are the electrical differences between these two MOSFETs?

A: The primary differences are current rating (24A versus 30A), power dissipation (300W versus 690W), gate charge (95 nC versus 62 nC), and on-state resistance characteristics. Both maintain the same 500V voltage rating and operating temperature range.

Q: Is the IXFT30N50Q3 suitable for applications originally designed for the IXFT24N50Q?

A: Yes. The IXFT30N50Q3 provides equivalent or superior performance in all critical parameters. Higher current and power ratings do not create compatibility issues; they represent performance headroom.

Q: How do gate charge differences affect gate driver selection?

A: The IXFT30N50Q3 requires less gate charge (62 nC versus 95 nC), reducing gate driver power dissipation and switching losses. Existing gate drivers rated for the IXFT24N50Q will operate with improved efficiency when driving the IXFT30N50Q3.

Q: Are both parts available in the same packaging format?

A: Both devices are supplied in TO-268AA surface mount packages. The IXFT24N50Q is available in standard packaging, while the IXFT30N50Q3 is supplied in tube packaging. Both are suitable for automated assembly processes.

Q: Do these devices require different thermal management approaches?

A: The IXFT30N50Q3 has higher power dissipation capability (690W versus 300W), allowing operation at higher power levels with the same thermal management solution. For equivalent power levels, the IXFT30N50Q3 operates cooler due to lower on-state resistance.

Q: Are compliance certifications identical between the two parts?

A: Yes. Both devices are ROHS3 compliant, REACH unaffected, and carry MSL 1 (unlimited moisture sensitivity level) ratings. Both maintain active product status with equivalent regulatory standing.