IXFP4N100P N-Channel 1000V 4A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFP4N100P is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 4A continuous drain current at 25°C. This device is part of the HiPerFET™ series and is housed in a TO-220-3 through-hole package. The component is classified as Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be maintained across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal specifications, while maintaining compatible packaging and compliance certifications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	4	A
On-Resistance (Rds On Max) @ 2A, 10V	3.3	Ohm
Gate Threshold Voltage (Vgs th) @ 250µA	5	V
Power Dissipation (Max)	150	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3
Mounting Type	Through Hole

Substitute Part Grouping Explanation

Substitution of the IXFP4N100P is determined by strict equivalence across the following critical parameters:

Voltage Rating Equivalence: Both the main part and substitute must maintain a Drain to Source Voltage (Vdss) rating of 1000V to ensure compatibility in high-voltage applications.

Current Capacity: The substitute part must support continuous drain current (Id) at or above the application requirement. The IXFP4N100P specifies 4A at 25°C; substitutes with equal or higher current ratings are acceptable.

On-Resistance Characteristics: The Rds On (Max) specification determines power dissipation and thermal performance. Substitutes with equivalent or lower on-resistance values maintain or improve circuit efficiency.

Thermal Performance: Power dissipation rating and operating temperature range must support the thermal requirements of the application.

Package Compatibility: Both parts must use TO-220-3 through-hole packaging to ensure mechanical and electrical compatibility with existing PCB layouts and thermal management solutions.

Compliance and Certifications: All substitute parts must maintain RoHS3 compliance and equivalent moisture sensitivity ratings to meet regulatory and reliability requirements.

Parameter Comparison

Parameter	IXFP4N100P (Main)	STP5NK100Z (Substitute)	Unit
Manufacturer	IXYS	STMicroelectronics
Drain to Source Voltage (Vdss)	1000	1000	V
Continuous Drain Current (Id) @ 25°C	4	3.5	A
Rds On (Max) @ Vgs 10V	3.3 @ 2A	3.7 @ 1.75A	Ohm
Gate Threshold Voltage (Vgs th)	5 @ 250µA	4.5 @ 100µA	V
Gate Charge (Qg) @ 10V	26	59	nC
Input Capacitance (Ciss) @ 25V	1456	1154	pF
Power Dissipation (Max)	150	125	W
Operating Temperature Range	-55 to 150	-55 to 150	°C
Package Type	TO-220-3	TO-220-3
Mounting Type	Through Hole	Through Hole
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level	1 (Unlimited)	1 (Unlimited)
Product Status	Active	Active

Engineering Selection Recommendations

Primary Selection: The IXFP4N100P remains the primary choice when the specified 4A continuous drain current and 150W power dissipation are required. This part is actively manufactured and maintains full compliance with RoHS3 and REACH regulations.

Substitute Selection Criteria: The STP5NK100Z (STMicroelectronics) is a valid substitute when the application can accommodate a reduced continuous drain current of 3.5A and maximum power dissipation of 125W. Both parts share identical voltage ratings (1000V Vdss), compatible TO-220-3 packaging, matching operating temperature ranges (-55°C to 150°C), and equivalent compliance certifications.

Compliance Equivalence: Both parts maintain ROHS3 compliance, unlimited moisture sensitivity rating (MSL 1), and REACH unaffected status, ensuring regulatory compatibility in equivalent applications.

Inventory Consideration: The STP5NK100Z is available in higher stock quantity (2310 pcs) compared to the IXFP4N100P (986 pcs), which may influence supply chain decisions.

Frequently Asked Questions (FAQ)

Q: Can the STP5NK100Z directly replace the IXFP4N100P in all applications?

A: Direct replacement is valid only when the application current requirement does not exceed 3.5A continuous drain current. The STP5NK100Z is rated for 3.5A at 25°C, compared to the IXFP4N100P at 4A. Applications requiring the full 4A rating must use the IXFP4N100P.

Q: Are the package dimensions identical between these parts?

A: Both parts use TO-220-3 through-hole packaging. The mechanical footprint and pin configuration are compatible for PCB layout purposes.

Q: What is the significance of the different gate charge specifications?

A: The IXFP4N100P specifies 26 nC gate charge at 10V, while the STP5NK100Z specifies 59 nC. Gate charge affects switching speed and driver circuit requirements. Applications with specific switching frequency or driver current limitations must account for this difference.

Q: Do both parts have the same thermal characteristics?

A: Both parts operate across the same temperature range (-55°C to 150°C). However, the IXFP4N100P has a higher maximum power dissipation rating (150W vs. 125W). Thermal management design must account for the lower dissipation limit of the STP5NK100Z if used as a substitute.

Q: Are there compliance differences between these parts?

A: Both parts maintain identical compliance status: RoHS3 compliant, REACH unaffected, MSL 1 (unlimited), and EAR99 classification. No regulatory differences exist between the two parts.

Q: What is the impact of different on-resistance values?

A: The IXFP4N100P specifies 3.3 Ohm Rds On (Max) at 2A, 10V, while the STP5NK100Z specifies 3.7 Ohm at 1.75A, 10V. The slightly higher on-resistance of the substitute results in increased power dissipation at equivalent current levels, which must be considered in thermal design.

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