IXFP22N65X2M N-Channel 650V 22A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFP22N65X2M is an N-Channel 650V 22A MOSFET manufactured by IXYS in the HiPerFET™ Ultra X2 series. This device is rated for continuous drain current of 22A at 25°C with a maximum drain-to-source voltage of 650V and is housed in a TO-220 Isolated Tab package for through-hole mounting applications. The part is currently Active in product status with full RoHS3 compliance.

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters within the same package family, enabling direct replacement in applications where the IXFP22N65X2M may be unavailable, obsolete, or require alternative sourcing from different manufacturers.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	22	A
On-State Resistance (Rds On) @ 11A, 10V	145	mOhm
Gate Charge (Qg) @ 10V	37	nC
Input Capacitance (Ciss) @ 25V	2190	pF
Power Dissipation (Max)	37	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3 Isolated Tab	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXFP22N65X2M is determined by the following critical parameters:

Voltage Rating (Vdss): Substitute parts must maintain a minimum Vdss of 650V to ensure equivalent or superior voltage withstand capability. Parts rated at 600V represent a 50V reduction and are classified as similar alternatives only when current and thermal characteristics compensate for the voltage derating.

Continuous Drain Current (Id): Substitute parts must support a minimum continuous drain current of 22A at 25°C to maintain equivalent current-handling capacity. Parts with lower current ratings (16A to 20A) are suitable only in applications with reduced current demands.

On-State Resistance (Rds On): The reference Rds On of 145 mOhm at 11A, 10V establishes the conduction loss baseline. Substitute parts with higher Rds On values (up to approximately 200 mOhm) remain functionally equivalent but will exhibit increased power dissipation.

Package and Mounting: All substitute parts must use TO-220 package variants (TO-220FM, TO-220FP, TO-220F-3, or equivalent isolated tab configurations) to ensure mechanical and thermal compatibility with existing PCB layouts and heatsink mounting.

Gate Charge (Qg) and Input Capacitance (Ciss): These parameters influence switching speed and gate drive requirements. Substitute parts with similar or lower values (25 nC to 70 nC for Qg; 1000 pF to 2200 pF for Ciss) maintain compatible gate drive characteristics.

Operating Temperature Range: The reference part operates from -55°C to 150°C. Substitute parts with identical or extended temperature ranges ensure thermal compatibility across all operating conditions.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Temp Range (°C)	Package	Status
IXFP22N65X2M	IXYS	650	22	145 @ 11A	37 @ 10V	2190 @ 25V	37	-55 to 150	TO-220 Isolated Tab	Active
R6024ENX	Rohm Semiconductor	600	24	165 @ 11.3A	70 @ 10V	1650 @ 25V	40	-40 to 150	TO-220FM	Active
FCPF165N65S3L1	onsemi	650	19	165 @ 9.5A	35 @ 10V	1415 @ 400V	35	-55 to 150	TO-220F-3	Obsolete
FCPF16N60NT	onsemi	600	16	199 @ 8A	52.3 @ 10V	2170 @ 100V	35.7	-55 to 150	TO-220F-3	Obsolete
IPA60R170CFD7XKSA1	Infineon Technologies	650	8	170 @ 6A	28 @ 10V	1199 @ 400V	26	-55 to 150	PG-TO220-FP	Active
IPA60R180P7SXKSA1	Infineon Technologies	600	18	180 @ 5.6A	25 @ 10V	1081 @ 400V	26	-40 to 150	PG-TO220-3-312	Active
IPAW60R180P7SXKSA1	Infineon Technologies	650	18	180 @ 5.6A	25 @ 10V	1081 @ 400V	26	-55 to 150	PG-TO220 Full Pack	Not For New Designs
R6020ENX	Rohm Semiconductor	600	20	196 @ 10A	60 @ 10V	1400 @ 25V	50	-40 to 150	TO-220FM	Active
R6024KNX	Rohm Semiconductor	600	24	165 @ 11.3A	45 @ 10V	2000 @ 25V	74	-55 to 150	TO-220FM	Active
STF20N65M5	STMicroelectronics	650	18	190 @ 9A	45 @ 10V	1345 @ 100V	30	-40 to 150	TO-220FP	Active
STF21N65M5	STMicroelectronics	650	17	190 @ 8.5A	50 @ 10V	1950 @ 100V	30	-40 to 150	TO-220FP	Active

Engineering Selection Recommendations

Direct Substitutes (Equivalent Voltage and Current):

Parts maintaining both 650V Vdss and ≥22A continuous drain current are the most suitable direct replacements. However, no substitute part in the provided list meets both criteria simultaneously. The IXFP22N65X2M remains the only part with this exact specification combination.

Primary Alternatives (650V Voltage Rating, Reduced Current):

FCPF165N65S3L1 (onsemi) and STF20N65M5 (STMicroelectronics) maintain the 650V voltage rating but support 19A and 18A continuous drain current respectively. These are suitable for applications where the full 22A capacity is not required. FCPF165N65S3L1 is marked Obsolete and should not be selected for new designs. STF20N65M5 is Active and RoHS3 compliant, making it the preferred 650V alternative.

IPAW60R180P7SXKSA1 (Infineon Technologies) provides 650V at 18A with extended temperature range (-55°C to 150°C) matching the reference part. However, this part is marked "Not For New Designs" and should be avoided in new applications.

Secondary Alternatives (600V Voltage Rating, Matched or Increased Current):

R6024ENX and R6024KNX (Rohm Semiconductor) both provide 24A continuous drain current at 600V, exceeding the reference part's current capacity. These parts are Active and RoHS3 compliant. The 50V voltage derating (from 650V to 600V) is acceptable in applications with adequate design margin. R6024KNX offers superior power dissipation capability (74W vs. 37W) and extended temperature range (-55°C to 150°C).

R6020ENX (Rohm Semiconductor) provides 20A at 600V with 50W power dissipation, suitable for applications requiring slightly reduced current handling.

Compliance and Sourcing:

All Active parts listed are RoHS3 compliant and REACH unaffected, meeting regulatory requirements for new designs. Parts marked Obsolete or "Not For New Designs" should be used only in legacy applications or when no alternative exists.

Frequently Asked Questions (FAQ)

Q: Can I use a 600V rated MOSFET as a direct replacement for the IXFP22N65X2M (650V)?

A: A 600V rated part can be used only if the application circuit design includes adequate voltage margin and does not require the full 650V blocking capability. The 50V reduction in voltage rating must be evaluated against the maximum transient voltages in the specific application. For new designs, maintaining the 650V rating is recommended.

Q: What is the significance of the Rds On (on-state resistance) parameter when selecting a substitute?

A: Rds On directly determines conduction losses and heat generation. The reference part specifies 145 mOhm at 11A, 10V. Substitute parts with higher Rds On values (165 mOhm to 200 mOhm) will dissipate more power and generate additional heat. Thermal design must account for this increase. Lower Rds On values are always preferable for reduced power loss.

Q: Are TO-220FM and TO-220FP packages mechanically compatible with the TO-220 Isolated Tab package?

A: All TO-220 variants (TO-220FM, TO-220FP, TO-220F-3, TO-220 Isolated Tab) share the same three-pin lead configuration and mounting hole spacing, making them mechanically interchangeable on standard PCBs. However, verify heatsink mounting compatibility, as isolated tab designs may have different thermal interface requirements compared to standard TO-220 packages.

Q: Why is the gate charge (Qg) parameter important for substitution?

A: Gate charge determines the energy required to switch the MOSFET on and off. The reference part specifies 37 nC at 10V. Substitute parts with significantly higher gate charge (70 nC) require more gate drive current and may necessitate gate driver circuit adjustments. Parts with lower gate charge (25 nC to 50 nC) are compatible and may improve switching speed.

Q: Can I substitute a part with lower continuous drain current rating if my application uses less than 22A?

A: Yes, provided the substitute part's current rating exceeds the actual application current requirement with adequate safety margin. For example, an 18A rated part is suitable for applications drawing 15A or less. However, verify that other parameters (voltage, temperature range, power dissipation) remain compatible.

Q: What does "Not For New Designs" status mean for the IPAW60R180P7SXKSA1?

A: This designation indicates the part is available for existing applications but should not be selected for new product development. Manufacturers use this status to phase out parts in favor of newer alternatives. For new designs, select parts marked Active status, such as STF20N65M5 or R6024KNX.

Q: How does operating temperature range affect part selection?

A: The reference part operates from -55°C to 150°C. Substitute parts with identical or extended ranges ensure compatibility across all environmental conditions. Parts with reduced lower temperature limits (e.g., -40°C minimum) may not be suitable for applications requiring operation below -40°C. Always verify the application's temperature requirements before substitution.

Q: Is input capacitance (Ciss) a critical parameter for substitution?

A: Input capacitance affects gate drive circuit design and switching transient behavior. The reference part specifies 2190 pF at 25V. Substitute parts with significantly different Ciss values (1000 pF to 2200 pF range) may require gate driver adjustments but remain functionally compatible. Lower Ciss values generally improve switching speed and reduce gate drive power requirements.

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