IXFN50N80Q2 Equivalent & Substitute Parts

Part Overview

The IXFN50N80Q2 is an N-Channel MOSFET rated for 800 V drain-to-source voltage with 50 A continuous drain current at 25°C. Manufactured by IXYS, this device is housed in a SOT-227B chassis mount package and is part of the HiPerFET™ Q2 Class series. The component delivers 1135 W maximum power dissipation and operates across the temperature range of -55°C to 150°C.

The IXFN50N80Q2 carries a product status of "Not For New Designs," indicating that IXYS has discontinued this device for new applications. Organizations currently using this part in production or maintenance applications require equivalent alternatives that maintain electrical and mechanical compatibility while offering active product status and continued supplier support.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	50	A (Tc)
On-State Resistance (Rds On Max) @ 10V	160	mOhm
Gate Threshold Voltage (Vgs(th) Max)	5.5	V @ 8mA
Gate Charge (Qg Max) @ 10V	260	nC
Input Capacitance (Ciss Max) @ 25V	13500	pF
Power Dissipation (Max)	1135	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SOT-227B	Chassis Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution eligibility for the IXFN50N80Q2 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 800 V
Continuous Drain Current (Id): Must equal or exceed 50 A at 25°C
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Mounting Type: Must be Chassis Mount
Operating Temperature Range: Must encompass -55°C to 150°C
Package/Case: Must be SOT-227-4 or mechanically compatible variant

Secondary Electrical Parameters (Performance Optimization):

On-State Resistance (Rds On): Lower values indicate improved efficiency
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation: Higher ratings provide thermal margin

All substitute parts listed meet the mandatory compatibility criteria. Differences in secondary parameters reflect design trade-offs within the same voltage and current class.

Parameter Comparison

Parameter	IXFN50N80Q2	IXFN60N80P	IXFN66N85X	APT53F80J
Manufacturer	IXYS	IXYS	IXYS	Microchip Technology
Vdss (V)	800	800	850	800
Id @ 25°C (A)	50	53	65	57
Rds On Max @ 10V (mOhm)	160	140	65	110
Vgs(th) Max (V)	5.5 @ 8mA	5 @ 8mA	5.5 @ 8mA	5 @ 5mA
Qg Max @ 10V (nC)	260	250	230	570
Ciss Max @ 25V (pF)	13500	18000	8900	17550
Power Dissipation Max (W)	1135	1040	830	960
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	SOT-227B	SOT-227B	SOT-227B	ISOTOP®
Product Status	Not For New Designs	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFN60N80P (IXYS)

The IXFN60N80P is an active product from IXYS that maintains the same 800 V voltage rating and SOT-227B package as the IXFN50N80Q2. It provides 53 A continuous drain current, exceeding the 50 A requirement. The on-state resistance of 140 mOhm is lower than the original part, resulting in reduced conduction losses. Gate charge of 250 nC is comparable to the original specification. This device is suitable for direct replacement in applications where the higher current rating and improved efficiency are beneficial. ROHS3 compliance and unlimited moisture sensitivity level (MSL 1) match the original part specifications.

IXFN66N85X (IXYS)

The IXFN66N85X is an active IXYS product offering the highest current rating at 65 A and an elevated voltage rating of 850 V. The on-state resistance of 65 mOhm represents a significant improvement over the original 160 mOhm specification, enabling substantially lower conduction losses. Input capacitance is reduced to 8900 pF, improving gate drive efficiency. Gate charge of 230 nC is the lowest among all alternatives. This device is appropriate for applications requiring enhanced thermal performance and reduced switching losses, with the trade-off of higher voltage rating and different thermal characteristics. ROHS3 compliance and MSL 1 rating are maintained.

APT53F80J (Microchip Technology)

The APT53F80J is an active product from Microchip Technology rated for 800 V and 57 A continuous drain current. It employs an ISOTOP® package variant rather than the standard SOT-227B, requiring mechanical verification for board-level compatibility. The on-state resistance of 110 mOhm is lower than the original part. Gate charge of 570 nC is significantly higher than all other alternatives, indicating higher switching losses. Input capacitance of 17550 pF is also elevated. This device is suitable for applications where the ISOTOP® package thermal characteristics are advantageous and where gate drive capability is not constrained. ROHS3 compliance and MSL 1 rating are maintained.

Frequently Asked Questions (FAQ)

Q: Can the IXFN60N80P directly replace the IXFN50N80Q2 without circuit modifications?

A: The IXFN60N80P meets all mandatory electrical compatibility criteria: 800 V Vdss rating, 53 A continuous drain current (exceeding the 50 A requirement), N-Channel MOSFET technology, and SOT-227B package. The lower on-state resistance (140 mOhm vs. 160 mOhm) reduces conduction losses. No circuit modifications are required for basic functionality. However, thermal design should be reviewed to account for the different power dissipation characteristics (1040 W vs. 1135 W).

Q: What is the primary difference between the IXFN66N85X and the original IXFN50N80Q2?

A: The IXFN66N85X has a higher drain-to-source voltage rating (850 V vs. 800 V), higher continuous drain current (65 A vs. 50 A), and significantly lower on-state resistance (65 mOhm vs. 160 mOhm). These improvements result in reduced conduction losses and improved thermal performance. The trade-off is lower power dissipation rating (830 W vs. 1135 W) and different input capacitance characteristics (8900 pF vs. 13500 pF).

Q: Is the APT53F80J package compatible with existing PCB layouts designed for the IXFN50N80Q2?

A: The APT53F80J uses an ISOTOP® package, which differs from the SOT-227B package of the original part. While both are classified as SOT-227-4 miniBLOC variants, mechanical verification is required to confirm pin alignment, lead spacing, and thermal pad dimensions match the existing PCB layout. Consult the detailed package drawings for both devices before implementing this substitution.

Q: Which substitute part offers the best efficiency improvement?

A: The IXFN66N85X provides the lowest on-state resistance at 65 mOhm, representing a 59% reduction compared to the original 160 mOhm specification. This translates to the lowest conduction losses in high-current applications. The IXFN60N80P offers a 12.5% reduction in on-state resistance (140 mOhm), while the APT53F80J provides a 31% reduction (110 mOhm).

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IXFN60N80P, IXFN66N85X, and APT53F80J are all ROHS3 compliant with MSL 1 (unlimited) moisture sensitivity level, matching the compliance profile of the original IXFN50N80Q2.

Q: What is the significance of the higher gate charge in the APT53F80J?

A: The APT53F80J has a gate charge of 570 nC compared to 260 nC in the original part. Higher gate charge requires greater gate drive current and energy to switch the device, potentially increasing switching losses and placing higher demands on the gate driver circuit. This parameter should be evaluated in applications with marginal gate drive capability.

Q: Can I use the IXFN66N85X in a circuit designed for 800 V operation?

A: Yes. The IXFN66N85X is rated for 850 V drain-to-source voltage, which exceeds the 800 V requirement. The higher voltage rating provides additional safety margin and does not create compatibility issues in 800 V circuits. The device operates safely within the specified voltage range.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message