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IXFN44N80 N-Channel MOSFET 800V 44A Equivalent & Substitute Parts
Part Overview
The IXFN44N80 is an N-Channel MOSFET rated for 800V drain-to-source voltage with 44A continuous drain current at 25°C. This device is housed in a SOT-227B chassis mount package and is part of the IXYS HiPerFET™ series. The part is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product line. Identifying equivalent and substitute parts is necessary for applications requiring continued component availability, design updates, or performance optimization while maintaining electrical and mechanical compatibility.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 800 | V |
| Continuous Drain Current (Id) @ 25°C | 44 | A (Tc) |
| Power Dissipation (Max) | 700 | W (Tc) |
| On-State Resistance (Rds On Max) @ 10V | 165 | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ 8mA | 4.5 | V |
| Gate Charge (Qg Max) @ 10V | 380 | nC |
| Input Capacitance (Ciss Max) @ 25V | 10000 | pF |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package Type | SOT-227B (miniBLOC) | Chassis Mount |
| Series | HiPerFET™ | — |
Substitute Part Grouping Explanation
Substitution of the IXFN44N80 is determined by the following critical electrical and mechanical parameters:
Mandatory Compatibility Criteria:
- Drain-to-Source Voltage (Vdss): Must equal or exceed 800V
- Package Type: Must be SOT-227B (miniBLOC) chassis mount
- Mounting Type: Chassis mount configuration
- Operating Temperature Range: Must support -55°C to 150°C (TJ)
Performance Consideration Parameters:
- Continuous Drain Current (Id): Substitute must meet or exceed 44A at 25°C
- On-State Resistance (Rds On): Lower values indicate improved performance
- Power Dissipation: Higher ratings provide thermal margin
- Gate Charge (Qg): Lower values reduce switching losses
- Input Capacitance (Ciss): Affects gate drive requirements
The IXFN44N80 has two identified substitutes within the IXYS HiPerFET™ family, both meeting the mandatory electrical and mechanical compatibility criteria while offering enhanced performance characteristics.
Parameter Comparison
| Parameter | IXFN44N80 | IXFN60N80P | IXFN44N80P | Unit |
|---|---|---|---|---|
| Manufacturer | IXYS | IXYS | IXYS | — |
| FET Type | N-Channel | N-Channel | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (Vdss) | 800 | 800 | 800 | V |
| Continuous Drain Current (Id) @ 25°C | 44 | 53 | 39 | A (Tc) |
| Drive Voltage (Max Rds On) | 10 | 10 | 10 | V |
| On-State Resistance (Rds On Max) @ 10V | 165 | 140 | 190 | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ 8mA | 4.5 | 5 | 5 | V |
| Gate Charge (Qg Max) @ 10V | 380 | 250 | 200 | nC |
| Maximum Gate Voltage (Vgs Max) | ±20 | ±30 | ±30 | V |
| Input Capacitance (Ciss Max) @ 25V | 10000 | 18000 | 12000 | pF |
| Power Dissipation (Max) | 700 | 1040 | 694 | W (Tc) |
| Operating Temperature Range | -55 to 150 | -55 to 150 | -55 to 150 | °C (TJ) |
| Package Type | SOT-227B | SOT-227B | SOT-227B | miniBLOC |
| Mounting Type | Chassis Mount | Chassis Mount | Chassis Mount | — |
| Series | HiPerFET™ | HiPerFET™, Polar | HiPerFET™, Polar | — |
| Product Status | Not For New Designs | Active | Active | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | — |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected | — |
Engineering Selection Recommendations
IXFN60N80P (Direct Upgrade)
The IXFN60N80P is classified as Active product status and serves as a direct performance upgrade to the IXFN44N80. This substitute provides:
- Higher continuous drain current (53A vs. 44A)
- Improved on-state resistance (140 mOhm vs. 165 mOhm)
- Significantly higher power dissipation capability (1040W vs. 700W)
- Reduced gate charge (250 nC vs. 380 nC), resulting in lower switching losses
- Enhanced maximum gate voltage rating (±30V vs. ±20V)
The IXFN60N80P maintains full electrical and mechanical compatibility with identical Vdss (800V), package type (SOT-227B), and operating temperature range. This part is suitable for applications requiring improved thermal performance or higher current capacity while maintaining the same form factor.
IXFN44N80P (Similar Specification)
The IXFN44N80P is classified as Active product status and shares the same base product number (IXFN44) as the original part. This substitute provides:
- Slightly lower continuous drain current (39A vs. 44A)
- Marginally higher on-state resistance (190 mOhm vs. 165 mOhm)
- Comparable power dissipation (694W vs. 700W)
- Significantly reduced gate charge (200 nC vs. 380 nC)
- Enhanced maximum gate voltage rating (±30V vs. ±20V)
The IXFN44N80P maintains full electrical and mechanical compatibility with identical Vdss (800V), package type (SOT-227B), and operating temperature range. This part is suitable for applications where the original IXFN44N80 is unavailable, with the trade-off of slightly reduced current capacity offset by improved gate charge characteristics and active product status.
Compliance and Regulatory Alignment
Both substitute parts maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory alignment with the original IXFN44N80. The transition from "Not For New Designs" status to Active status for both substitutes provides long-term component availability assurance.
Frequently Asked Questions (FAQ)
Q: Can the IXFN60N80P directly replace the IXFN44N80 in existing designs?
A: Yes. The IXFN60N80P maintains identical drain-to-source voltage (800V), package type (SOT-227B chassis mount), and operating temperature range (-55°C to 150°C). The higher current rating (53A vs. 44A) and improved on-state resistance (140 mOhm vs. 165 mOhm) make it a direct upgrade with no circuit modifications required.
Q: What are the key differences between IXFN60N80P and IXFN44N80P?
A: The IXFN60N80P offers higher continuous drain current (53A vs. 39A) and lower on-state resistance (140 mOhm vs. 190 mOhm), resulting in superior thermal performance. The IXFN44N80P provides lower gate charge (200 nC vs. 250 nC) and is based on the same IXFN44 platform as the original part. Both maintain identical voltage ratings and package specifications.
Q: Does the increased input capacitance of the IXFN60N80P affect gate drive circuit design?
A: The IXFN60N80P has higher input capacitance (18000 pF vs. 10000 pF) compared to the IXFN44N80. This parameter affects gate charge requirements and switching speed. Gate drive circuits must be verified to supply adequate current for the specified gate charge (250 nC for IXFN60N80P vs. 380 nC for IXFN44N80).
Q: Are both substitute parts available in the same packaging options as the original IXFN44N80?
A: Both IXFN60N80P and IXFN44N80P are supplied in SOT-227B (miniBLOC) chassis mount packages, identical to the original IXFN44N80. The IXFN60N80P is available in Tube packaging, while the IXFN44N80P is also available in Tube packaging.
Q: Why is the IXFN44N80 marked as "Not For New Designs"?
A: The "Not For New Designs" status indicates the IXFN44N80 has been superseded by newer products in the IXYS HiPerFET™ family. Both identified substitutes (IXFN60N80P and IXFN44N80P) carry Active product status, ensuring continued availability and manufacturer support for new designs.
Q: What is the significance of the Polar designation in the substitute part series?
A: Both substitute parts are designated as HiPerFET™ Polar series, indicating they incorporate Polar technology enhancements. This designation reflects manufacturing improvements and performance optimizations compared to the original HiPerFET™ series IXFN44N80.
Q: Can the IXFN44N80P be used if current capacity is critical to the application?
A: The IXFN44N80P has a lower continuous drain current rating (39A vs. 44A). If the application requires the full 44A capacity of the original IXFN44N80, the IXFN60N80P (53A) is the appropriate substitute. The IXFN44N80P is suitable only for applications with current requirements at or below 39A.
Q: Are there thermal management differences between the three parts?
A: The IXFN60N80P provides the highest power dissipation capability (1040W), followed by the IXFN44N80 (700W) and IXFN44N80P (694W). All three parts use identical SOT-227B chassis mount packages, so thermal performance differences are determined by on-state resistance and current ratings rather than package geometry.
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