IXFN36N110P Equivalent & Substitute Parts

Part Overview

The IXFN36N110P is an N-Channel MOSFET manufactured by IXYS, rated for 1100V drain-to-source voltage with 36A continuous drain current at 25°C. This device is housed in a SOT-227B (miniBLOC) chassis mount package and is part of the HiPerFET™ series. The part is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement planning.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	1100	V
Continuous Drain Current (Id) @ 25°C	36	A (Tc)
On-State Resistance (Rds On Max) @ 10V	240	mOhm
Gate Threshold Voltage (Vgs(th) Max)	6.5	V @ 1mA
Power Dissipation (Max)	1000	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SOT-227B (miniBLOC)	Chassis Mount

Substitute Part Grouping Explanation

Substitution of the IXFN36N110P is determined by the following critical electrical and mechanical parameters:

Voltage Rating: The substitute must support the application's maximum drain-to-source voltage requirement. The IXFN36N110P operates at 1100V; substitutes operating at 1000V or higher are acceptable for applications not exceeding 1000V.

Current Rating: The substitute must provide continuous drain current capacity equal to or greater than the application requirement. The IXFN36N110P provides 36A; substitutes rated at 42A or higher satisfy this criterion.

On-State Resistance (Rds On): Lower Rds On values indicate improved efficiency and reduced power dissipation. The IXFN36N110P specifies 240 mOhm maximum; substitutes with 210 mOhm or lower provide superior performance.

Package and Mounting: Both the main part and substitute must use chassis mount configurations compatible with SOT-227B or equivalent miniBLOC footprints.

Compliance and Status: Active product status and RoHS3 compliance ensure long-term availability and regulatory alignment.

Parameter Comparison

Parameter	IXFN36N110P	APT41F100J	Unit
Manufacturer	IXYS	Microchip Technology	—
Product Status	Obsolete	Active	—
FET Type	N-Channel	N-Channel	—
Drain-to-Source Voltage (Vdss)	1100	1000	V
Continuous Drain Current (Id) @ 25°C	36	42	A (Tc)
On-State Resistance (Rds On Max) @ 10V	240	210	mOhm
Gate Threshold Voltage (Vgs(th) Max)	6.5	5	V @ specified Id
Gate Charge (Qg) @ 10V	350	570	nC
Input Capacitance (Ciss) @ 25V	23000	18500	pF
Power Dissipation (Max)	1000	960	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Package Type	SOT-227B (miniBLOC)	ISOTOP® (miniBLOC)	—
Mounting Type	Chassis Mount	Chassis Mount	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

The APT41F100J from Microchip Technology serves as a functional substitute for the obsolete IXFN36N110P in applications where the voltage rating requirement does not exceed 1000V.

Advantages of APT41F100J:

Active product status ensures ongoing availability and manufacturer support
Higher continuous drain current (42A vs. 36A) provides design margin
Lower on-state resistance (210 mOhm vs. 240 mOhm) reduces conduction losses
RoHS3 and REACH compliance align with current regulatory requirements
Identical operating temperature range (-55°C to 150°C)

Application Constraints:

The APT41F100J operates at 1000V maximum, making it unsuitable for applications requiring 1100V rating
Gate charge is higher (570 nC vs. 350 nC), affecting switching speed and driver requirements
Input capacitance is lower (18500 pF vs. 23000 pF), which may influence gate drive circuit design

Selection Criteria: Use the APT41F100J when the application voltage does not exceed 1000V and when active product status and improved electrical performance are required. Retain the IXFN36N110P specification only for applications requiring the full 1100V rating or when legacy design validation is mandatory.

Frequently Asked Questions (FAQ)

Q: Can the APT41F100J replace the IXFN36N110P in all applications?

A: No. The APT41F100J is rated for 1000V maximum drain-to-source voltage, while the IXFN36N110P is rated for 1100V. Substitution is valid only for applications where the maximum operating voltage does not exceed 1000V.

Q: What are the key electrical differences between these two MOSFETs?

A: The APT41F100J provides higher continuous drain current (42A vs. 36A) and lower on-state resistance (210 mOhm vs. 240 mOhm), resulting in improved current handling and reduced conduction losses. However, it has higher gate charge (570 nC vs. 350 nC) and lower input capacitance (18500 pF vs. 23000 pF).

Q: Are the packages physically compatible?

A: Both devices use miniBLOC chassis mount packages (SOT-227B for IXFN36N110P and ISOTOP® for APT41F100J). While the package designations differ, both are compatible with SOT-227-4 footprints and chassis mount configurations. Verify mechanical dimensions and thermal interface requirements for your specific application.

Q: Why is the IXFN36N110P classified as obsolete?

A: Obsolete status indicates that IXYS has discontinued manufacturing and support for this device. The APT41F100J represents an active alternative from a major manufacturer, ensuring long-term availability and technical support.

Q: Does the higher gate charge of the APT41F100J affect circuit design?

A: Yes. Higher gate charge (570 nC vs. 350 nC) requires greater charge delivery from the gate driver circuit. Verify that your gate driver can supply sufficient current and charge capacity for the APT41F100J without exceeding maximum gate voltage specifications (±30V for both devices).

Q: Are both devices RoHS and REACH compliant?

A: Yes. Both the IXFN36N110P and APT41F100J are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

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