IXFH4N100Q N-Channel 1000V 4A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH4N100Q is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 4A continuous drain current at 25°C. This device operates in the HiPerFET™ Q Class series and is housed in a TO-247AD through-hole package. The part is Active status and RoHS3 compliant, making it suitable for high-voltage switching applications requiring robust thermal performance up to 150W dissipation.

Equivalent and substitute parts are identified based on matching critical electrical parameters: drain-to-source voltage rating, continuous drain current capability, gate drive voltage, on-state resistance characteristics, and compatible through-hole packaging. Substitutes must maintain functional equivalence within the specified operating temperature range and compliance certifications.

Substiute Parts

IXFH4N100Q

IXYSIn Stock: 974IXFH4N100Q Datasheet

Current PartRFQ

STW5NK100Z

STMicroelectronicsIn Stock: 1260STW5NK100Z Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH4N100Q is determined by the following critical parameters:

Voltage Rating Equivalence: The substitute part must maintain a Vdss rating of 1000V to ensure safe operation in the same circuit topology without derating or redesign.

Current Capability: The substitute must support continuous drain current at or above 4A at 25°C. Devices with lower current ratings cannot be used as direct substitutes without circuit modification.

On-State Resistance: Rds On characteristics must be compatible with the drive voltage of 10V. Substitutes with significantly higher on-state resistance will increase power dissipation and thermal stress.

Package Compatibility: The substitute must use through-hole mounting in a TO-247 family package (TO-247AD or TO-247-3) to maintain mechanical and thermal interface compatibility.

Compliance and Temperature Range: The substitute must maintain RoHS3 compliance and support the full operating temperature range of -55°C to 150°C (TJ).

Gate Drive Characteristics: Gate charge and input capacitance values influence switching speed and driver circuit design. Substitutes with significantly different values may require gate driver circuit adjustment.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitution: STW5NK100Z

The STW5NK100Z from STMicroelectronics qualifies as a functional substitute for the IXFH4N100Q based on matching voltage rating (1000V Vdss), compatible drive voltage (10V), and identical operating temperature range (-55°C to 150°C). Both devices are RoHS3 compliant and REACH unaffected, meeting regulatory requirements for equivalent deployment.

Current Rating Consideration: The STW5NK100Z provides 3.5A continuous drain current, which is 0.5A lower than the IXFH4N100Q's 4A rating. This difference is acceptable for applications where the circuit design operates at or below 3.5A. Applications requiring the full 4A capability must retain the IXFH4N100Q or conduct thermal analysis to confirm adequate performance at reduced current margins.

On-State Resistance: The STW5NK100Z exhibits 3.7Ohm Rds On compared to 3Ohm for the IXFH4N100Q. This 0.7Ohm increase results in proportionally higher conduction losses. Thermal design calculations must confirm that the 125W maximum power dissipation of the STW5NK100Z remains within acceptable limits for the target application.

Gate Drive Characteristics: The STW5NK100Z has higher gate charge (59nC versus 39nC) and input capacitance (1154pF versus 1050pF). Gate driver circuits must supply sufficient current to meet switching frequency requirements without exceeding driver output specifications.

Package Compatibility: Both devices use TO-247-3 through-hole packaging, ensuring mechanical and thermal interface compatibility without PCB redesign.

Compliance Status: Both parts maintain identical compliance certifications (RoHS3, REACH unaffected), supporting direct substitution in regulated applications.

Frequently Asked Questions (FAQ)

Q: Can the STW5NK100Z replace the IXFH4N100Q in all applications?

A: The STW5NK100Z is functionally equivalent for applications operating at or below 3.5A continuous drain current. Applications requiring the full 4A capability of the IXFH4N100Q must evaluate whether the reduced current rating and increased on-state resistance are acceptable for the specific circuit design. Thermal analysis is required to confirm adequate performance.

Q: What is the impact of the higher on-state resistance in the STW5NK100Z?

A: The STW5NK100Z has 3.7Ohm Rds On versus 3Ohm for the IXFH4N100Q. At equivalent current levels, this increases conduction power dissipation proportionally. For a 2A load, the STW5NK100Z dissipates approximately 14.8W compared to 12W for the IXFH4N100Q. Thermal design must account for this difference to ensure junction temperature remains within the -55°C to 150°C operating range.

Q: Are the gate drive requirements different between these devices?

A: Yes. The STW5NK100Z requires higher gate charge (59nC versus 39nC) and has higher input capacitance (1154pF versus 1050pF). Gate driver circuits must supply sufficient current to charge the gate capacitance within the required switching time. Verify that the gate driver output current and voltage specifications accommodate the STW5NK100Z's higher capacitive load.

Q: Do both devices use the same package?

A: Both the IXFH4N100Q and STW5NK100Z use the TO-247-3 through-hole package. Pin assignments are identical, allowing direct PCB mounting without modification. Thermal interface characteristics are equivalent.

Q: Are there compliance or regulatory differences between these parts?

A: No. Both devices are RoHS3 compliant and REACH unaffected. They are equivalent for use in regulated applications requiring these certifications.

Q: What is the maximum gate voltage for each device?

A: The IXFH4N100Q supports ±20V maximum gate voltage, while the STW5NK100Z supports ±30V. Both are compatible with standard 10V to 15V gate drive circuits. The STW5NK100Z provides additional margin for gate voltage transients.

Q: Can I use the IXFH4N100Q as a substitute for the STW5NK100Z?

A: Yes. The IXFH4N100Q provides higher continuous drain current (4A versus 3.5A), lower on-state resistance (3Ohm versus 3.7Ohm), and lower gate charge (39nC versus 59nC). It is a superior substitute with improved performance characteristics. No circuit modification is required.