IXFH15N100Q Equivalent & Substitute Parts

Part Overview

The IXFH15N100Q is an N-Channel MOSFET rated for 1000V drain-to-source voltage with 15A continuous drain current at 25°C. This device is manufactured by IXYS in the HiPerFET™ series and is housed in a TO-247AD through-hole package. The part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support and procurement planning. Substitute parts must maintain compatibility with the electrical specifications and mechanical form factor while accommodating the transition from obsolete to active product lines.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	15	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	700 mOhm @ 500 mA, 10V	Ohm
Gate Threshold Voltage (Vgs(th) Max) @ Id	5	V @ 4 mA
Gate Charge (Qg Max) @ Vgs	170	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	4500	pF @ 25V
Power Dissipation (Max)	360	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
FET Technology	MOSFET (Metal Oxide)	N-Channel

Substitute Part Grouping Explanation

Substitution of the IXFH15N100Q is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 1000V
Continuous Drain Current (Id): Must equal or exceed 15A at 25°C
Package Type: Must be TO-247-3 or equivalent through-hole form factor
FET Type: N-Channel configuration
Operating Temperature Range: Must support -55°C to 150°C minimum

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation Rating: Must support thermal requirements of the application

Substitute parts are grouped into two categories: direct equivalents from the same manufacturer (IXYS) and cross-manufacturer alternatives (STMicroelectronics) that meet or exceed the primary electrical specifications while maintaining package compatibility.

Parameter Comparison

Parameter	IXFH15N100Q	IXFH15N100Q3	STW12N120K5	STW11NK100Z	STW13NK100Z	SCT10N120	STW10N95K5
Manufacturer	IXYS	IXYS	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	1000	1000	1200	1000	1000	1200	950
Id @ 25°C (A)	15	15	12	8.3	13	12	8
Rds On Max (mOhm)	700	1050	690	1380	700	690	800
Vgs(th) Max (V)	5	6.5	5	4.5	4.5	3.5	5
Qg Max (nC)	170	64	44.2	162	266	22	22
Ciss Max (pF)	4500	3250	1370	3500	6000	290	630
Power Dissipation Max (W)	360	690	250	230	350	150	130
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 200	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Compliance	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Equivalent (Recommended Primary Substitute):

The IXFH15N100Q3 is the direct successor to the IXFH15N100Q within the IXYS product line. Both devices share identical voltage and current ratings (1000V, 15A), the same TO-247-3 package, and compatible operating temperature ranges. The IXFH15N100Q3 is classified as Active product status with ROHS3 compliance and REACH unaffected certification, ensuring long-term availability and regulatory compliance. The Q3 variant features improved power dissipation capability (690W versus 360W) and reduced gate charge (64 nC versus 170 nC), providing enhanced thermal performance and reduced switching losses. This part is the preferred substitute for direct replacement in existing designs.

Cross-Manufacturer Alternatives:

STW13NK100Z (STMicroelectronics) meets the primary substitution criteria with 1000V Vdss and 13A continuous drain current, falling within the 15A requirement envelope. This device maintains TO-247-3 package compatibility and Active product status with full RoHS3 compliance. The STW13NK100Z exhibits comparable on-state resistance (700 mOhm) and operating temperature range to the original part.

STW12N120K5 (STMicroelectronics) provides a higher voltage rating (1200V) with 12A continuous drain current and improved on-state resistance (690 mOhm). This part is suitable for applications where voltage margin is beneficial, though the reduced current rating (12A versus 15A) requires verification against application load requirements.

STW11NK100Z (STMicroelectronics) matches the 1000V voltage specification with 8.3A continuous drain current. This part is suitable only for applications where the reduced current rating is acceptable, as it does not meet the 15A continuous drain current specification of the original device.

SCT10N120 (STMicroelectronics) employs SiCFET (Silicon Carbide) technology with 1200V rating and 12A current capability. This device offers extended operating temperature range (-55°C to 200°C) and significantly reduced gate charge (22 nC), but the reduced current rating and different semiconductor technology require application-specific evaluation.

STW10N95K5 (STMicroelectronics) provides 950V voltage rating with 8A continuous drain current. This part does not meet the primary voltage and current specifications and is suitable only for applications with reduced electrical requirements.

Compliance and Availability:

All substitute parts from STMicroelectronics carry ROHS3 compliance and REACH unaffected status. The IXFH15N100Q3 maintains IXYS product line continuity with equivalent certifications. All recommended substitutes are classified as Active product status, ensuring procurement availability and long-term supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can the IXFH15N100Q3 be used as a direct replacement for the IXFH15N100Q?

A: Yes. The IXFH15N100Q3 is the direct successor within the IXYS HiPerFET™ product line. Both devices share identical Vdss (1000V) and Id (15A) ratings, the same TO-247-3 package, and compatible operating temperature ranges (-55°C to 150°C). The Q3 variant is Active product status with improved thermal performance and reduced gate charge, making it the preferred substitute for direct replacement.

Q: What is the minimum voltage rating required for a substitute part?

A: The substitute part must have a Drain-to-Source Voltage (Vdss) rating equal to or greater than 1000V. This ensures the device can withstand the maximum voltage stress in the application. Parts with lower voltage ratings (such as STW10N95K5 at 950V) do not meet this requirement.

Q: What is the minimum current rating required for a substitute part?

A: The substitute part must support a continuous drain current (Id) at 25°C equal to or greater than 15A. This ensures the device can handle the maximum current demand without exceeding thermal limits. Parts with lower current ratings (such as STW11NK100Z at 8.3A or SCT10N120 at 12A) do not fully meet this specification and require application-specific verification.

Q: Are all substitute parts available in the same package?

A: Yes. All substitute parts listed are housed in the TO-247-3 through-hole package, ensuring mechanical compatibility with existing PCB layouts and socket designs. No board redesign is required for package accommodation.

Q: What is the difference between MOSFET and SiCFET technology in the substitute options?

A: The IXFH15N100Q and most STMicroelectronics substitutes use conventional MOSFET (Metal Oxide) technology. The SCT10N120 employs SiCFET (Silicon Carbide) technology, which offers lower gate charge (22 nC versus 170 nC) and extended operating temperature range (up to 200°C). SiCFET devices are suitable for high-temperature applications but require verification of gate drive circuit compatibility due to different threshold voltage characteristics.

Q: Why do some substitute parts have higher voltage ratings than the original part?

A: Higher voltage ratings (such as STW12N120K5 at 1200V and SCT10N120 at 1200V) provide additional voltage margin and can be used in applications where the original 1000V rating is sufficient. The higher rating does not degrade performance in 1000V applications but may increase cost and component size. Selection depends on application requirements and cost considerations.

Q: What does "Active" product status mean compared to "Obsolete"?

A: Active product status indicates the manufacturer actively produces and supports the component, ensuring long-term availability, supply chain stability, and continued technical support. Obsolete status indicates the manufacturer has discontinued production, making future procurement difficult or impossible. All recommended substitutes carry Active status, addressing the obsolescence of the original IXFH15N100Q.

Q: Are all substitute parts RoHS compliant?

A: Yes. All STMicroelectronics substitute parts carry ROHS3 compliance certification. The IXFH15N100Q3 also meets ROHS3 requirements. This ensures compatibility with regulatory requirements in markets mandating RoHS compliance.

Q: Can I use STW13NK100Z as a substitute if my application requires exactly 15A continuous current?

A: The STW13NK100Z provides 13A continuous drain current, which is below the 15A requirement of the original IXFH15N100Q. This part is suitable only if your application can operate reliably at 13A or lower. If your design requires the full 15A capability, the IXFH15N100Q3 is the appropriate substitute.

Q: What is gate charge and why does it matter for substitution?

A: Gate charge (Qg) is the total charge required to switch the MOSFET from off to on state. Lower gate charge reduces switching losses and simplifies gate drive circuit design. The IXFH15N100Q has 170 nC gate charge, while the IXFH15N100Q3 has 64 nC. Lower gate charge in substitutes may improve efficiency but requires verification that existing gate drive circuits can accommodate the different charge requirements.

Q: What is on-state resistance and how does it affect performance?

A: On-state resistance (Rds On) determines the voltage drop across the MOSFET when conducting current. Lower Rds On reduces power dissipation and heat generation. The IXFH15N100Q specifies 700 mOhm maximum. Substitutes with comparable or lower Rds On (such as STW12N120K5 and SCT10N120 at 690 mOhm) provide equivalent or improved performance. Higher Rds On values increase power dissipation and may require thermal design verification.

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