IXFE36N100 Equivalent & Substitute Parts

Part Overview

The IXFE36N100 is an N-Channel MOSFET rated for 1000V drain-to-source voltage with 33A continuous drain current at 25°C. Manufactured by IXYS under the HiPerFET™ series, this device is housed in a SOT-227B chassis mount package and is designed for high-voltage switching applications requiring robust thermal performance up to 580W.

The IXFE36N100 is classified as obsolete. Locating equivalent or substitute components is necessary to support ongoing system maintenance, repair, and new design implementations where this part number is specified or functionally required.

Substiute Parts

IXFE36N100

IXYSIn Stock: 1018IXFE36N100 Datasheet

Current PartRFQ

IXFN38N100P

IXYSIn Stock: 68595IXFN38N100P Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFE36N100 is determined by strict equivalence across the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): 1000V minimum
• Package Type: SOT-227B chassis mount configuration
• FET Type: N-Channel MOSFET technology
• Operating Temperature Range: -55°C to 150°C minimum

Performance Consideration Parameters:

• Continuous Drain Current (Id): Equal to or greater than 33A
• On-State Resistance (Rds On): Equal to or lower than 240mOhm
• Power Dissipation: Equal to or greater than 580W
• Gate Charge (Qg): Lower values indicate improved switching performance

The IXFN38N100P meets all critical matching parameters and exceeds performance specifications in drain current, on-state resistance, power dissipation, and gate charge characteristics.

Parameter Comparison

Engineering Selection Recommendations

IXFN38N100P as Direct Substitute:

The IXFN38N100P is a direct substitute for the IXFE36N100 based on electrical and mechanical compatibility. Both devices share identical voltage ratings, package configuration, and operating temperature specifications. The IXFN38N100P provides enhanced performance characteristics: 5A higher continuous drain current (38A vs. 33A), 30mOhm lower on-state resistance (210mOhm vs. 240mOhm), 105nC lower gate charge (350nC vs. 455nC), and 420W higher power dissipation capability (1000W vs. 580W).

The IXFN38N100P holds Active product status, ensuring ongoing availability and supply chain support. The device is RoHS3 compliant, whereas the IXFE36N100 compliance status is not specified. Both parts maintain REACH Unaffected status and EAR99 export classification.

The superior electrical performance of the IXFN38N100P—particularly reduced on-state resistance and gate charge—results in lower conduction losses and faster switching characteristics, making it suitable for applications where the IXFE36N100 was previously specified.

Frequently Asked Questions (FAQ)

Q: Can the IXFN38N100P directly replace the IXFE36N100 in existing designs?

A: Yes. Both devices are N-Channel MOSFETs with identical 1000V drain-to-source voltage ratings, SOT-227B package configuration, and -55°C to 150°C operating temperature range. The IXFN38N100P meets or exceeds all electrical specifications of the IXFE36N100.

Q: What are the key differences between these two parts?

A: The IXFN38N100P provides higher continuous drain current (38A vs. 33A), lower on-state resistance (210mOhm vs. 240mOhm), lower gate charge (350nC vs. 455nC), and higher power dissipation capability (1000W vs. 580W). The IXFN38N100P is Active status; the IXFE36N100 is Obsolete.

Q: Are the package dimensions identical?

A: Both parts use the SOT-227-4 miniBLOC package with chassis mount configuration. Physical dimensions and pin assignments are compatible.

Q: What is the significance of the lower gate charge in the IXFN38N100P?

A: Lower gate charge (350nC vs. 455nC) indicates reduced switching losses and faster gate charge transfer, resulting in improved switching speed and reduced power dissipation during switching transitions.

Q: Does the IXFN38N100P require different gate drive circuitry?

A: No. Both devices operate with 10V drive voltage for maximum on-state resistance specification. Gate drive requirements remain unchanged.

Q: Is the IXFN38N100P suitable for thermal-limited applications?

A: The IXFN38N100P provides superior thermal performance with 1000W maximum power dissipation compared to 580W for the IXFE36N100. Lower on-state resistance also reduces conduction losses, improving thermal characteristics in current-carrying applications.

Q: What compliance certifications apply to the IXFN38N100P?

A: The IXFN38N100P is RoHS3 compliant and REACH Unaffected. Both parts carry EAR99 export classification and Moisture Sensitivity Level 1 (Unlimited).