IXFC40N30Q Equivalent & Substitute Parts

Part Overview

The IXFC40N30Q is an N-Channel 300 V MOSFET manufactured by IXYS in the ISOPLUS220™ through-hole package. This device is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing system support, maintenance, and new design implementations where legacy compatibility is required.

The primary function of this component is to serve as a high-voltage switching element in power conversion and control applications. Due to its obsolete status, active substitute parts with equivalent electrical characteristics are required for procurement and system continuity.

Substiute Parts

IXFC40N30Q
IXYSIn Stock: 1692IXFC40N30Q Datasheet
IXFC40N30Q
Current Part
FDA38N30
onsemiIn Stock: 16576FDA38N30 Datasheet
FDA38N30
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 300 V
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Mounting Type Through Hole
Package Type ISOPLUS220™
Product Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected

Substitute Part Grouping Explanation

Substitution of the IXFC40N30Q is based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain to Source Voltage (Vdss): 300 V (exact match required)
  • FET Type: N-Channel (exact match required)
  • Technology: MOSFET (Metal Oxide) (exact match required)
  • Mounting Type: Through Hole (exact match required)

The FDA38N30 manufactured by onsemi meets all primary substitution criteria. Both devices operate at 300 V drain-to-source voltage, utilize N-Channel MOSFET technology, and employ through-hole mounting configurations. The FDA38N30 is classified as an active product, ensuring ongoing availability and support.

Package differences exist between the IXFC40N30Q (ISOPLUS220™) and the FDA38N30 (TO-3PN). These represent different through-hole package geometries and pin configurations. Physical board layout modifications may be required to accommodate the substitute component.

Parameter Comparison

Parameter IXFC40N30Q FDA38N30 Unit
Manufacturer IXYS onsemi
Drain to Source Voltage (Vdss) 300 300 V
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C Not Specified 38A (Tc) A
Rds On (Max) @ Id, Vgs Not Specified 85 mOhm @ 19A, 10V
Power Dissipation (Max) Not Specified 312 W (Tc)
Operating Temperature Not Specified -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case ISOPLUS220™ TO-3P-3, SC-65-3
Product Status Obsolete Active
REACH Status REACH Unaffected REACH Unaffected
Moisture Sensitivity Level (MSL) 1 (Unlimited) Not Applicable

Engineering Selection Recommendations

The FDA38N30 is the qualified substitute for the obsolete IXFC40N30Q based on the following engineering criteria:

Electrical Compatibility: Both devices share identical drain-to-source voltage ratings (300 V), N-Channel configuration, and MOSFET technology. This ensures functional equivalence in high-voltage switching applications.

Product Status: The FDA38N30 is classified as an active product with 16,491 pieces in current inventory. The IXFC40N30Q is obsolete with limited remaining stock (1,644 pieces). Selection of the FDA38N30 ensures long-term component availability and supply chain continuity.

Regulatory Compliance: Both devices maintain REACH Unaffected status and EAR99 ECCN classification, indicating equivalent regulatory standing for export and environmental compliance.

Package Consideration: The FDA38N30 employs a TO-3PN package (TO-3P-3, SC-65-3) rather than the ISOPLUS220™ package of the original component. Physical board layout and mechanical mounting modifications are required for implementation.

Frequently Asked Questions (FAQ)

Q: Can the FDA38N30 directly replace the IXFC40N30Q without board modifications?

A: The FDA38N30 and IXFC40N30Q employ different through-hole packages (TO-3PN versus ISOPLUS220™). Pin configurations and physical dimensions differ. Board layout modifications, including hole repositioning and trace routing adjustments, are required for mechanical and electrical integration.

Q: Are the electrical characteristics of the FDA38N30 compatible with IXFC40N30Q applications?

A: Both devices operate at 300 V drain-to-source voltage and utilize N-Channel MOSFET technology. The FDA38N30 provides specified continuous drain current (38A at Tc) and power dissipation (312W at Tc), whereas the IXFC40N30Q specifications for these parameters are not provided in available documentation. Verification of application current and power requirements against the FDA38N30 datasheet is necessary.

Q: What is the significance of the different package types?

A: Package type determines physical dimensions, pin spacing, thermal characteristics, and mounting requirements. The ISOPLUS220™ and TO-3PN packages are distinct through-hole formats with different footprints. Component selection must account for available board space and thermal management requirements of the target application.

Q: Are there regulatory or compliance differences between these devices?

A: Both the IXFC40N30Q and FDA38N30 maintain REACH Unaffected status and EAR99 ECCN classification. No regulatory barriers exist to substitution from a compliance perspective.

Q: Why is the FDA38N30 recommended despite package differences?

A: The FDA38N30 is the only identified substitute meeting the core electrical criteria (300 V Vdss, N-Channel MOSFET, through-hole mounting) while maintaining active product status and current availability. Package differences are mechanical considerations that can be addressed through board redesign, whereas electrical incompatibility cannot be resolved.

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