IXFC13N50 Equivalent & Substitute Parts

Part Overview

The IXFC13N50 is an N-Channel MOSFET rated for 500V drain-to-source voltage with 12A continuous drain current at 25°C. Manufactured by IXYS, this device is housed in the ISOPLUS220™ package and is designed for high-voltage switching applications requiring through-hole mounting. The part operates across a temperature range of -55°C to 150°C (TJ) with a maximum power dissipation of 140W.

The IXFC13N50 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

IXFC13N50

IXYSIn Stock: 1641IXFC13N50 Datasheet

Current PartRFQ

STP12NM50

STMicroelectronicsIn Stock: 7639STP12NM50 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFC13N50 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 500V
• Continuous Drain Current (Id) @ 25°C: Must equal or exceed 12A
• Drive Voltage: Must support 10V gate drive
• On-State Resistance (Rds On): Must not exceed the original specification to maintain thermal performance
• Operating Temperature Range: Must encompass the original -55°C to 150°C range
• Gate Charge (Qg): Lower values indicate improved switching performance

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole required
• Package Type: Must be compatible with PCB layout and thermal management requirements

The STP12NM50 meets these substitution criteria with matching voltage and current ratings, compatible through-hole mounting, and improved electrical characteristics in key parameters.

Parameter Comparison

Engineering Selection Recommendations

The STP12NM50 is an active production substitute for the obsolete IXFC13N50. Both devices share identical voltage and current ratings (500V, 12A), ensuring electrical compatibility in applications designed for the original part.

Advantages of STP12NM50:

• Active product status ensures long-term availability and supply chain continuity
• Improved on-state resistance (350 mOhm vs. 400 mOhm) reduces conduction losses
• Significantly lower gate charge (39 nC vs. 120 nC) improves switching speed and reduces driver power requirements
• Lower input capacitance (1000 pF vs. 2800 pF) enhances gate drive efficiency
• Extended minimum operating temperature (-65°C vs. -55°C) provides broader thermal coverage
• Higher maximum gate voltage rating (±30V vs. ±20V) offers greater gate drive flexibility
• Increased power dissipation rating (160W vs. 140W) provides thermal margin

Package Consideration: The STP12NM50 uses TO-220-3 packaging instead of ISOPLUS220™. PCB layout modifications are required to accommodate the different package footprint. Both packages are through-hole mounted and suitable for standard PCB assembly processes.

Both parts maintain REACH compliance and EAR99 export classification, ensuring regulatory consistency.

Frequently Asked Questions (FAQ)

Q: Can the STP12NM50 directly replace the IXFC13N50 without circuit modifications?

A: Electrical substitution is direct due to matching voltage and current ratings. However, package differences require PCB layout changes. The TO-220-3 package has a different footprint than ISOPLUS220™, necessitating new PCB artwork and component placement verification.

Q: What are the thermal implications of switching from IXFC13N50 to STP12NM50?

A: The STP12NM50 offers improved thermal performance through lower on-state resistance (350 mOhm vs. 400 mOhm) and higher power dissipation rating (160W vs. 140W). These characteristics reduce junction temperature rise under identical operating conditions, improving reliability margins.

Q: How do the switching characteristics compare between these devices?

A: The STP12NM50 exhibits superior switching performance with gate charge reduced by approximately 68% (39 nC vs. 120 nC) and input capacitance reduced by approximately 64% (1000 pF vs. 2800 pF). These reductions lower gate drive power requirements and enable faster switching transitions.

Q: Are there any gate drive voltage compatibility concerns?

A: Both devices operate with 10V drive voltage. The STP12NM50 accepts a wider gate voltage range (±30V vs. ±20V), providing additional design flexibility. Existing gate drive circuits designed for ±20V operation are fully compatible with the STP12NM50.

Q: What is the impact of different package types on thermal management?

A: Both ISOPLUS220™ and TO-220-3 are through-hole packages with similar thermal characteristics. Thermal performance depends on PCB copper area, heatsink attachment, and airflow. Verify heatsink mounting compatibility with the TO-220-3 package geometry during design transition.

Q: Are there supply chain advantages to using STP12NM50?

A: Yes. The STP12NM50 is an active production part with significantly higher inventory availability (7615 Pcs vs. 1592 Pcs). Active product status ensures continued manufacturing and long-term supply security compared to the obsolete IXFC13N50.

Q: Do both parts meet the same regulatory and compliance standards?

A: Yes. Both the IXFC13N50 and STP12NM50 are REACH Unaffected and classified as EAR99 for export purposes, maintaining identical regulatory compliance profiles.