IXFC110N10P Equivalent & Substitute Parts

Part Overview

The IXFC110N10P is an N-Channel MOSFET rated for 100V drain-to-source voltage with 60A continuous drain current in an ISOPLUS220™ through-hole package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and production continuity. The ISOPLUS220™ package format and specific electrical characteristics define the substitution criteria for this component.

Substiute Parts

IXFC110N10P

IXYSIn Stock: 730IXFC110N10P Datasheet

Current PartRFQ

IXTP60N10T

IXYSIn Stock: 25000IXTP60N10T Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFC110N10P is determined by electrical parameter equivalence within the following criteria:

Mandatory Matching Parameters:

• Drain-to-Source Voltage (Vdss): 100V minimum
• Continuous Drain Current (Id): 60A minimum at 25°C
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Operating Temperature Range: -55°C to 175°C minimum

Allowable Parameter Variations:

• On-State Resistance (Rds On): Substitute values must not exceed the original specification to maintain thermal performance
• Gate Charge (Qg): Lower values are acceptable and indicate improved switching characteristics
• Input Capacitance (Ciss): Lower values are acceptable
• Power Dissipation: Higher values indicate improved thermal capability
• Gate Threshold Voltage (Vgs(th)): Minor variations within ±0.5V are acceptable
• Maximum Gate Voltage (Vgs Max): Substitute values equal to or greater than original are acceptable
• Package Type: Substitutes may use alternative through-hole packages with compatible pinout and thermal characteristics

The IXTP60N10T meets these substitution criteria with equivalent electrical performance and active product status.

Parameter Comparison

Engineering Selection Recommendations

IXTP60N10T as Primary Substitute:

The IXTP60N10T is the qualified substitute for the obsolete IXFC110N10P based on the following factors:

1. Electrical Equivalence: Both devices share identical Vdss (100V) and Id (60A) ratings. The IXTP60N10T maintains Rds On performance within acceptable limits (18 mOhm vs. 17 mOhm), with improved gate charge characteristics (49 nC vs. 110 nC) and lower input capacitance (2650 pF vs. 3550 pF).

2. Product Status: The IXTP60N10T is classified as active, ensuring long-term availability and supply chain continuity. The IXFC110N10P is obsolete, making substitution necessary for ongoing production.

3. Compliance and Certifications: The IXTP60N10T is RoHS3 compliant and maintains REACH Unaffected status, matching the regulatory profile of the original part. Both devices carry EAR99 ECCN classification and identical HTSUS codes.

4. Thermal Performance: The IXTP60N10T provides superior power dissipation capability (176W vs. 120W), offering improved thermal margin in applications.

5. Package Consideration: The IXTP60N10T uses TO-220-3 packaging instead of ISOPLUS220™. PCB layout modifications are required to accommodate the different package footprint and pinout. Thermal interface design may require adjustment due to different package geometry.

6. Temperature Range: Both devices operate across the full -55°C to 175°C temperature range, ensuring compatibility in all thermal environments.

Frequently Asked Questions (FAQ)

Q: Can the IXTP60N10T directly replace the IXFC110N10P without PCB modifications?

A: No. The IXTP60N10T uses TO-220-3 packaging while the IXFC110N10P uses ISOPLUS220™ packaging. These packages have different footprints, pinouts, and mounting configurations. PCB layout redesign is required. Verify pinout compatibility and thermal interface requirements before implementation.

Q: What are the key electrical differences between these two devices?

A: Both devices maintain identical Vdss (100V) and Id (60A) ratings. The IXTP60N10T offers improved switching characteristics with lower gate charge (49 nC vs. 110 nC) and reduced input capacitance (2650 pF vs. 3550 pF). On-state resistance is comparable (18 mOhm vs. 17 mOhm). The IXTP60N10T provides higher power dissipation capability (176W vs. 120W).

Q: Why is the IXFC110N10P obsolete?

A: The IXFC110N10P is classified as obsolete by the manufacturer. The IXTP60N10T represents the active equivalent in the IXYS product portfolio, offering improved performance characteristics and continued manufacturing support.

Q: Are there any compliance or regulatory differences between these parts?

A: Both devices maintain equivalent compliance profiles. The IXTP60N10T is RoHS3 compliant, while the IXFC110N10P status is not specified. Both are REACH Unaffected and carry EAR99 ECCN classification. Verify specific regulatory requirements for your application and region.

Q: What thermal considerations apply when substituting these devices?

A: The IXTP60N10T provides higher power dissipation capability (176W vs. 120W), allowing greater thermal margin. However, the TO-220-3 package has different thermal characteristics than ISOPLUS220™. Evaluate thermal interface design, heatsink requirements, and PCB copper area allocation for the new package geometry.

Q: Can the IXTP60N10T handle the same current levels as the IXFC110N10P?

A: Yes. Both devices are rated for 60A continuous drain current at 25°C. The IXTP60N10T maintains this rating with comparable on-state resistance performance.

Q: What is the impact of lower gate charge on circuit design?

A: The IXTP60N10T has significantly lower gate charge (49 nC vs. 110 nC), resulting in faster switching transitions and reduced gate drive power requirements. This may improve overall circuit efficiency and allow use of lower-rated gate drive circuits. Verify gate drive circuit compatibility with the lower gate charge specification.