ISL6609IBZ Equivalent & Substitute Parts

Part Overview

The ISL6609IBZ is a half-bridge gate driver IC manufactured by Renesas Electronics Corporation, designed for synchronous N-channel MOSFET applications. This non-inverting driver operates with a 4.5V to 5.5V supply and delivers peak output current of 4A sink capability. The device is classified as obsolete, making identification of functionally equivalent alternatives essential for ongoing design support and production continuity.

Substiute Parts

ISL6609IBZ
Renesas Electronics CorporationIn Stock: 4046ISL6609IBZ Datasheet
ISL6609IBZ
Current Part
ISL6609IRZ
Renesas Electronics CorporationIn Stock: 1147ISL6609IRZ Datasheet
ISL6609IRZ
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Key Parameters

Parameter Value
Manufacturer Part Number ISL6609IBZ
Manufacturer Renesas Electronics Corporation
Category Power Management (PMIC)
Description IC GATE DRVR HALF-BRIDGE 8SOIC
Driven Configuration Half-Bridge
Channel Type Synchronous
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 4.5V ~ 5.5V
Logic Voltage - VIL, VIH 1V, 2V
Current - Peak Output (Sink) 4A
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 36V
Rise / Fall Time (Typ) 8ns, 8ns
Operating Temperature -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Product Status Obsolete
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected

Substitute Part Grouping Explanation

Substitution eligibility for the ISL6609IBZ is determined by strict equivalence across the following critical parameters:

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 5.5V
  • Logic Voltage - VIL, VIH: 1V, 2V
  • Current - Peak Output (Sink): 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 8ns, 8ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Base Product Number: ISL6609

The ISL6609IRZ qualifies as a direct functional substitute. Both devices share identical electrical specifications and thermal performance. The primary distinction lies in packaging format: the ISL6609IBZ uses 8-SOIC, while the ISL6609IRZ uses 8-QFN (3x3). This packaging difference does not affect electrical compatibility when PCB layout accommodates the alternative footprint.

Parameter Comparison

Parameter ISL6609IBZ ISL6609IRZ Match
Manufacturer Renesas Electronics Corporation Renesas Electronics Corporation
Driven Configuration Half-Bridge Half-Bridge
Channel Type Synchronous Synchronous
Number of Drivers 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 4.5V ~ 5.5V 4.5V ~ 5.5V
Logic Voltage - VIL, VIH 1V, 2V 1V, 2V
Current - Peak Output (Sink) 4A 4A
Input Type Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 36V 36V
Rise / Fall Time (Typ) 8ns, 8ns 8ns, 8ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Base Product Number ISL6609 ISL6609
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours) 3 (168 Hours)
REACH Status REACH Unaffected REACH Unaffected
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-VQFN Exposed Pad Different
Packaging Format Tube Tube

Engineering Selection Recommendations

Both the ISL6609IBZ and ISL6609IRZ are classified as obsolete products. Selection between these devices should be based on PCB layout constraints and manufacturing capabilities:

The ISL6609IBZ in 8-SOIC package is suitable for designs with established SOIC footprints and existing assembly processes optimized for this format.

The ISL6609IRZ in 8-QFN (3x3) package offers reduced board area and improved thermal performance through the exposed pad design. This package is preferred for space-constrained applications and designs requiring enhanced heat dissipation.

Both devices maintain identical electrical performance, thermal operating range, and regulatory compliance (ROHS3, REACH Unaffected). Selection should prioritize manufacturing process compatibility and PCB layout requirements rather than electrical performance, as all critical parameters are equivalent.

Frequently Asked Questions (FAQ)

Q: Can ISL6609IRZ replace ISL6609IBZ in existing designs?

A: Yes, provided PCB layout is modified to accommodate the 8-QFN (3x3) footprint in place of the 8-SOIC footprint. All electrical specifications, thermal performance, and logic thresholds are identical. Assembly process compatibility must be verified with manufacturing.

Q: What is the primary difference between ISL6609IBZ and ISL6609IRZ?

A: The devices are electrically identical. The ISL6609IBZ uses 8-SOIC packaging, while the ISL6609IRZ uses 8-QFN (3x3) packaging with an exposed pad. The QFN package provides superior thermal characteristics and reduced board area.

Q: Are there any electrical performance differences between the two packages?

A: No. Both packages deliver identical rise/fall times (8ns), peak output current (4A sink), supply voltage range (4.5V ~ 5.5V), and bootstrap voltage capability (36V maximum).

Q: What does the exposed pad on the ISL6609IRZ provide?

A: The exposed pad on the QFN package improves thermal dissipation by providing a direct thermal path to the PCB. This is beneficial in applications with sustained high switching frequencies or elevated ambient temperatures.

Q: Are both devices still available for new designs?

A: Both devices are classified as obsolete. Availability is limited to existing inventory. For new designs, consult Renesas Electronics for current-generation gate driver alternatives with equivalent specifications.

Q: Do both devices meet the same regulatory requirements?

A: Yes. Both ISL6609IBZ and ISL6609IRZ are ROHS3 compliant, REACH unaffected, and carry identical moisture sensitivity levels (MSL 3, 168 hours).

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