IRLR8729PBF N-Channel 30V 58A MOSFET Equivalent & Substitute Parts

Part Overview

The IRLR8729PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage and 58A continuous drain current at 25°C case temperature. This device is packaged in TO-252AA (DPAK) surface mount configuration and is part of the HEXFET® series. The part is currently discontinued at DiGi Electronics, making equivalent and substitute parts necessary for ongoing design support and production requirements.

Key Parameters

Parameter	Value	Unit
Manufacturer	Infineon Technologies	—
Part Number	IRLR8729PBF	—
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C	58	A (Tc)
On-Resistance (Rds On) @ 25A, 10V	8.9	mOhm
Gate Threshold Voltage (Vgs(th)) @ 25µA	2.35	V
Gate Charge (Qg) @ 4.5V	16	nC
Power Dissipation (Max)	55	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package	TO-252-3 (DPAK)	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRLR8729PBF is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must be 30V or greater
Package Type: Must be TO-252-3 (DPAK) surface mount
FET Type: Must be N-Channel MOSFET
Technology: Metal Oxide Semiconductor (MOSFET)
Operating Temperature Range: Must support -55°C to 175°C minimum
RoHS Compliance: ROHS3 Compliant

Performance Parameters for Functional Equivalence:

Continuous Drain Current (Id): 58A or greater at case temperature
On-Resistance (Rds On): 8.9mOhm or lower at specified conditions
Gate Threshold Voltage (Vgs(th)): Within ±0.5V of 2.35V
Power Dissipation: 55W or greater at case temperature

The substitute parts listed below meet these criteria and are therefore electrically and mechanically compatible with the IRLR8729PBF in applications requiring equivalent performance characteristics.

Parameter Comparison

Parameter	IRLR8729PBF	DMG8880LK3-13	DMNH3010LK3-13	FDD6670A	FDD8896	STD100N3LF3	STD150N3LLH6	STD70NS04ZL
Manufacturer	Infineon	Diodes Inc.	Diodes Inc.	onsemi	Fairchild	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	30	30	30	30	30	30	30	33
Id @ 25°C (A)	58 (Tc)	11 (Ta)	55 (Tc)	66 (Tc)	94 (Tc)	80 (Tc)	80 (Tc)	70 (Tc)
Rds On (mOhm)	8.9 @ 25A, 10V	7.5 @ 11.6A, 10V	9.5 @ 18A, 10V	8 @ 15A, 10V	5.7 @ 35A, 10V	5.5 @ 40A, 10V	2.8 @ 40A, 10V	10.5 @ 30A, 10V
Vgs(th) (V)	2.35 @ 25µA	2.3 @ 250µA	2.5 @ 250µA	3 @ 250µA	2.5 @ 250µA	2.5 @ 250µA	2.5 @ 250µA	3 @ 1mA
Qg (nC)	16 @ 4.5V	27.6 @ 10V	37 @ 10V	22 @ 5V	60 @ 10V	27 @ 5V	29 @ 4.5V	32 @ 5V
Ciss (pF)	1350 @ 15V	1289 @ 15V	2075 @ 15V	1755 @ 15V	2525 @ 15V	2060 @ 25V	3700 @ 25V	1800 @ 25V
Power Dissipation (W)	55 (Tc)	1.68 (Ta)	2 (Ta)	63 (Tc)	80 (Tc)	110 (Tc)	110 (Tc)	110 (Tc)
Operating Temp (°C)	-55 to 175	-55 to 150	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-252-3 (DPAK)	TO-252 (DPAK)	TO-252-3 (DPAK)	TO-252AA	TO-252 (DPAK)	DPAK	DPAK	DPAK
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	—	ROHS3	ROHS3	ROHS3
Product Status	Discontinued	Active	Active	Last Time Buy	Active	Obsolete	Obsolete	Active

Engineering Selection Recommendations

Primary Substitute: DMNH3010LK3-13 (Diodes Incorporated)

The DMNH3010LK3-13 provides the closest functional match to the IRLR8729PBF. It meets all critical electrical parameters with 30V Vdss, 55A continuous drain current at case temperature, and 9.5mOhm on-resistance. This part maintains full operating temperature range (-55°C to 175°C), is ROHS3 compliant, and carries AEC-Q101 automotive qualification. The part is currently active with 20,400 units in stock, ensuring supply continuity.

Secondary Substitute: FDD6670A (onsemi)

The FDD6670A offers superior performance characteristics with 66A continuous drain current and 8mOhm on-resistance, both exceeding the IRLR8729PBF specifications. It is rated for 63W power dissipation at case temperature and maintains the full operating temperature range. However, this part is designated as Last Time Buy, limiting long-term availability. It is ROHS3 compliant and suitable for applications requiring higher current capacity.

Tertiary Substitute: STD100N3LF3 (STMicroelectronics)

The STD100N3LF3 provides 80A continuous drain current and 5.5mOhm on-resistance, both superior to the IRLR8729PBF. Power dissipation reaches 110W at case temperature. This part is marked as Obsolete, making it unsuitable for new designs or long-term production support despite meeting electrical specifications.

Alternative Substitute: FDD8896 (Fairchild Semiconductor)

The FDD8896 delivers the highest performance among substitutes with 94A continuous drain current, 5.7mOhm on-resistance, and 80W power dissipation. It maintains 30V Vdss and full operating temperature range. This part is currently active with 43,200 units in stock. However, RoHS compliance status is not explicitly provided in the specification data.

Not Recommended: DMG8880LK3-13 (Diodes Incorporated)

The DMG8880LK3-13 has insufficient continuous drain current (11A) compared to the IRLR8729PBF (58A) and does not meet functional equivalence requirements. Additionally, the maximum operating temperature is limited to 150°C, below the required 175°C specification.

Not Recommended: STD150N3LLH6 (STMicroelectronics)

While this part meets electrical specifications, it is marked as Obsolete and should not be selected for new designs or ongoing production.

Not Recommended: STD70NS04ZL (STMicroelectronics)

This part has a Vdss rating of 33V, exceeding the 30V specification, and 10.5mOhm on-resistance, which is higher than the IRLR8729PBF. Although it is currently active, it does not provide equivalent performance characteristics.

Frequently Asked Questions (FAQ)

Q1: Can the DMG8880LK3-13 be used as a direct replacement for the IRLR8729PBF?

No. The DMG8880LK3-13 has a continuous drain current rating of only 11A, which is significantly lower than the IRLR8729PBF's 58A rating. This part cannot handle the same current levels and is not functionally equivalent. Additionally, its maximum operating temperature is limited to 150°C, below the required 175°C specification.

Q2: What is the difference between case temperature (Tc) and ambient temperature (Ta) ratings?

Case temperature (Tc) is measured at the device case and represents the actual junction temperature under specified conditions. Ambient temperature (Ta) is the surrounding air temperature. Tc ratings are typically higher than Ta ratings for the same device. When comparing drain current specifications, ensure both parts use the same temperature measurement basis (Tc or Ta) for accurate comparison.

Q3: Is the DMNH3010LK3-13 suitable for automotive applications?

Yes. The DMNH3010LK3-13 carries AEC-Q101 automotive qualification, making it suitable for automotive-grade applications. The IRLR8729PBF does not have explicit automotive qualification in the provided specifications.

Q4: Why is the FDD6670A marked as Last Time Buy?

Last Time Buy status indicates that the manufacturer has announced end-of-life for this product. While the part is still available, production will cease, and future availability cannot be guaranteed. For new designs requiring long-term supply, the DMNH3010LK3-13 or FDD8896 are preferred alternatives.

Q5: Can I use a substitute with higher drain current rating?

Yes. A substitute with higher continuous drain current (Id) rating is functionally compatible and provides additional design margin. Parts such as FDD8896 (94A) and STD100N3LF3 (80A) exceed the IRLR8729PBF's 58A rating and can be used in applications where the original part was specified.

Q6: What does ROHS3 compliance mean?

ROHS3 (Restriction of Hazardous Substances Directive 3) compliance indicates that the device meets European Union environmental standards and does not contain restricted hazardous materials such as lead, cadmium, or mercury. ROHS3 compliance is required for many commercial and industrial applications.

Q7: Are all substitute parts available in the same package?

All substitute parts listed are packaged in TO-252 (DPAK) or TO-252-3 (DPAK) surface mount configurations, which are mechanically compatible. However, minor variations in lead frame design may exist between manufacturers. Verify PCB footprint compatibility with the specific manufacturer's datasheet before finalizing board layout.

Q8: Which substitute offers the best on-resistance performance?

The STD150N3LLH6 offers the lowest on-resistance at 2.8mOhm, followed by STD100N3LF3 at 5.5mOhm and FDD8896 at 5.7mOhm. However, STD150N3LLH6 is marked as Obsolete. For active products, FDD8896 provides the best on-resistance performance at 5.7mOhm.

Q9: What is gate charge (Qg) and why does it matter?

Gate charge (Qg) represents the total charge required to switch the MOSFET from off to on state. Lower gate charge reduces switching losses and allows faster switching speeds. The IRLR8729PBF has 16nC gate charge, while substitutes range from 22nC to 60nC. Higher gate charge may require stronger gate drive circuits.

Q10: Can I use STD70NS04ZL as a substitute despite its 33V Vdss rating?

While the STD70NS04ZL's 33V Vdss exceeds the 30V requirement, it does not provide equivalent performance. Its 10.5mOhm on-resistance is higher than the IRLR8729PBF's 8.9mOhm, and it is not recommended as a primary substitute. Use DMNH3010LK3-13 or FDD6670A for better performance alignment.

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