IRLR3303TRLPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRLR3303TRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 35A continuous drain current at 25°C. This device is packaged in TO-252-3 (DPAK) surface mount configuration and is classified as obsolete. Due to its obsolete product status, equivalent substitute parts are necessary to maintain design continuity and ensure component availability for new production runs and field replacements.

Substiute Parts

IRLR3303TRLPBF
Infineon TechnologiesIn Stock: 759IRLR3303TRLPBF Datasheet
IRLR3303TRLPBF
Current Part
NTD20N03L27T4G
onsemiIn Stock: 15402NTD20N03L27T4G Datasheet
NTD20N03L27T4G
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 35 A (Tc)
Rds On (Max) @ Id, Vgs 31 mOhm @ 21A, 10V mOhm
Gate Charge (Qg) @ Vgs 26 nC @ 4.5V
Input Capacitance (Ciss) @ Vds 870 pF @ 25V
Power Dissipation (Max) 68 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-252-3 (DPAK) Surface Mount
Vgs (Max) ±16 V

Substitute Part Grouping Explanation

Substitution of the IRLR3303TRLPBF is determined by strict electrical and mechanical parameter compatibility within the N-Channel MOSFET category. The following parameters establish the substitution criteria:

Critical Matching Parameters:

  • Drain to Source Voltage (Vdss): Must equal or exceed 30V
  • Package Type: Must be TO-252-3 (DPAK) surface mount configuration
  • FET Type: N-Channel MOSFET technology
  • Mounting: Surface mount only

Performance Parameters (Must Support Application Requirements):

  • Continuous Drain Current (Id): Substitute must support minimum 35A at rated temperature
  • On-State Resistance (Rds On): Lower or equivalent values ensure thermal performance
  • Gate Charge (Qg): Affects switching speed and drive circuit requirements
  • Operating Temperature Range: Must encompass -55°C to 175°C minimum

The substitute part NTD20N03L27T4G meets the voltage and package requirements but operates at reduced continuous drain current (20A vs. 35A). This substitution is valid only for applications where the actual operating current does not exceed the substitute's rating.

Parameter Comparison

Parameter IRLR3303TRLPBF (Main) NTD20N03L27T4G (Substitute) Unit
Manufacturer Infineon Technologies onsemi
Product Status Obsolete Active
Drain to Source Voltage (Vdss) 30 30 V
Continuous Drain Current (Id) @ 25°C 35 (Tc) 20 (Ta) A
Rds On (Max) @ Id, Vgs 31 mOhm @ 21A, 10V 27 mOhm @ 10A, 5V mOhm
Gate Charge (Qg) @ Vgs 26 nC @ 4.5V 18.9 nC @ 10V nC
Input Capacitance (Ciss) @ Vds 870 pF @ 25V 1260 pF @ 25V pF
Power Dissipation (Max) 68 (Tc) 74 (Tc) W
Operating Temperature Range -55 to 175 -55 to 150 °C (TJ)
Vgs (Max) ±16 ±20 V
Package Type TO-252-3 (DPAK) TO-252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
RoHS Status Not specified ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

Primary Consideration: Current Rating Derating

The NTD20N03L27T4G substitute operates at 20A continuous drain current compared to the IRLR3303TRLPBF's 35A rating. Selection of this substitute requires verification that actual circuit operating current remains below 20A under all conditions, including transient peaks and thermal derating scenarios.

Voltage and Package Compatibility

Both devices share identical 30V Vdss rating and TO-252-3 (DPAK) package configuration, ensuring mechanical and electrical compatibility at the voltage level. Pin-to-pin compatibility is maintained for direct PCB substitution.

Temperature Operating Range

The IRLR3303TRLPBF operates to 175°C junction temperature, while the NTD20N03L27T4G is rated to 150°C. Applications requiring operation above 150°C junction temperature cannot use this substitute.

Compliance and Availability

The NTD20N03L27T4G holds active product status with ROHS3 compliance certification, ensuring long-term availability and regulatory alignment. The IRLR3303TRLPBF's obsolete status necessitates transition to active alternatives.

Gate Drive Characteristics

The substitute exhibits lower gate charge (18.9 nC vs. 26 nC) and higher input capacitance (1260 pF vs. 870 pF), requiring evaluation of gate drive circuit performance. Lower gate charge may reduce switching losses; higher capacitance may increase drive current requirements.

Frequently Asked Questions (FAQ)

Q: Can the NTD20N03L27T4G directly replace the IRLR3303TRLPBF in all applications?

A: Direct replacement is limited by the substitute's 20A continuous drain current rating versus the original 35A. Substitution is valid only when actual circuit current remains below 20A under all operating conditions, including thermal derating and transient events.

Q: Are the packages physically identical?

A: Yes. Both devices use TO-252-3 (DPAK) surface mount packaging with identical pin configuration, enabling direct PCB substitution without layout modification.

Q: What is the maximum junction temperature difference between these parts?

A: The IRLR3303TRLPBF operates to 175°C junction temperature, while the NTD20N03L27T4G is rated to 150°C. Applications requiring sustained operation above 150°C cannot use this substitute.

Q: How do the on-state resistance values compare?

A: The NTD20N03L27T4G exhibits 27 mOhm at 10A, 5V versus the IRLR3303TRLPBF's 31 mOhm at 21A, 10V. Direct comparison is limited by different test conditions; however, the substitute shows favorable resistance characteristics at its rated current.

Q: Does the substitute meet regulatory requirements?

A: The NTD20N03L27T4G is ROHS3 compliant and REACH unaffected. Both devices carry EAR99 ECCN classification and identical HTSUS codes, ensuring regulatory alignment.

Q: What impact do the different gate charge values have?

A: The substitute's lower gate charge (18.9 nC vs. 26 nC) may reduce switching losses and gate drive power consumption. However, higher input capacitance (1260 pF vs. 870 pF) may increase peak gate drive current requirements. Gate drive circuit evaluation is necessary.

Q: Is the substitute suitable for high-frequency switching applications?

A: The lower gate charge of the NTD20N03L27T4G supports faster switching transitions. However, the higher input capacitance requires verification that the gate drive circuit can supply adequate current at the intended switching frequency.

Q: What is the inventory status of these parts?

A: The IRLR3303TRLPBF has 680 pieces in stock (obsolete status). The NTD20N03L27T4G has 15,365 pieces in stock with active product status, ensuring sustained availability for production requirements.

Request Quote (Ships tomorrow)