IRLR230ATF Equivalent & Substitute Parts

Part Overview

The IRLR230ATF is an N-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage with 7.5A continuous drain current at 25°C. The device is housed in a TO-252-3 DPAK package and is designed for surface mount applications. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support and procurement continuity.

Substiute Parts

IRLR230ATF
onsemiIn Stock: 878IRLR230ATF Datasheet
IRLR230ATF
Current Part
STD5N20LT4
STMicroelectronicsIn Stock: 15266STD5N20LT4 Datasheet
STD5N20LT4
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 7.5 A (Tc)
Drive Voltage (Max Rds On) 5 V
Rds On (Max) @ Id, Vgs 400 mOhm @ 3.75A, 5V
Vgs (Max) ±20 V
Operating Temperature Range -55 to 150 °C (TJ)
Package / Case TO-252-3, DPAK
Mounting Type Surface Mount
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the IRLR230ATF is determined by strict alignment of the following electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Drain-to-source voltage rating (Vdss) must equal or exceed 200V
  • N-Channel FET topology required
  • Gate-source voltage rating (Vgs Max) must be ±20V or greater
  • Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

  • Surface mount package type required
  • TO-252-3 DPAK footprint compatibility mandatory

Current and Thermal Considerations:

  • Continuous drain current (Id) and on-state resistance (Rds On) determine functional equivalence in specific circuit applications
  • Devices with lower current ratings or higher on-state resistance may function as substitutes in current-limited applications

The STD5N20LT4 meets all mandatory electrical and mechanical compatibility criteria, though with reduced continuous drain current (5A versus 7.5A) and increased on-state resistance (700mOhm versus 400mOhm).

Parameter Comparison

Parameter IRLR230ATF (onsemi) STD5N20LT4 (STMicroelectronics) Unit
FET Type N-Channel N-Channel
Drain to Source Voltage (Vdss) 200 200 V
Current - Continuous Drain (Id) @ 25°C 7.5 5 A (Tc)
Drive Voltage (Max Rds On) 5 5 V
Rds On (Max) @ Id, Vgs 400 @ 3.75A, 5V 700 @ 2.5A, 5V mOhm
Vgs(th) (Max) @ Id 2 @ 250µA 2.5 @ 50µA V
Gate Charge (Qg) (Max) @ Vgs 27 @ 5V 6 @ 5V nC
Vgs (Max) ±20 ±20 V
Input Capacitance (Ciss) (Max) @ Vds 755 @ 25V 242 @ 25V pF
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Package / Case TO-252-3, DPAK TO-252-3, DPAK
Mounting Type Surface Mount Surface Mount
Product Status Obsolete Active

Engineering Selection Recommendations

The STD5N20LT4 is an active product manufactured by STMicroelectronics and serves as a functional substitute for the obsolete IRLR230ATF. Both devices share identical voltage ratings (200V Vdss), identical gate-source voltage limits (±20V), identical operating temperature range (-55°C to 150°C), and identical package footprint (TO-252-3 DPAK).

The STD5N20LT4 is RoHS3 compliant and carries REACH Unaffected status, meeting current regulatory requirements. The IRLR230ATF carries REACH Unaffected status with MSL 1 (Unlimited) moisture sensitivity rating, as does the STD5N20LT4.

The primary electrical difference is the continuous drain current specification: the STD5N20LT4 is rated for 5A continuous drain current compared to the IRLR230ATF's 7.5A rating. The STD5N20LT4 exhibits higher on-state resistance (700mOhm versus 400mOhm at rated conditions) and lower gate charge (6nC versus 27nC). These differences result in reduced power dissipation capability and lower input capacitance in the substitute device.

Selection of the STD5N20LT4 is appropriate for applications where the 5A continuous drain current rating and associated thermal characteristics are sufficient for the circuit design. Applications requiring the full 7.5A continuous current capability of the IRLR230ATF require alternative component selection.

Frequently Asked Questions (FAQ)

Q: Can the STD5N20LT4 directly replace the IRLR230ATF in all applications?

A: The STD5N20LT4 shares the same package footprint (TO-252-3 DPAK) and voltage ratings (200V Vdss, ±20V Vgs) as the IRLR230ATF. However, the STD5N20LT4 is rated for 5A continuous drain current versus the IRLR230ATF's 7.5A rating. Direct replacement is possible only in applications where the circuit design operates within the 5A continuous current limit of the substitute device.

Q: What are the key electrical differences between these devices?

A: The IRLR230ATF provides 7.5A continuous drain current with 400mOhm on-state resistance, while the STD5N20LT4 provides 5A continuous drain current with 700mOhm on-state resistance. The STD5N20LT4 has significantly lower gate charge (6nC versus 27nC) and lower input capacitance (242pF versus 755pF), resulting in faster switching characteristics and reduced gate drive requirements.

Q: Are the packages physically identical?

A: Both devices use the TO-252-3 DPAK package with identical pin configuration and footprint. Surface mount assembly equipment and PCB layouts designed for the IRLR230ATF are compatible with the STD5N20LT4 without modification.

Q: What is the product status difference between these parts?

A: The IRLR230ATF is classified as obsolete, indicating onsemi has discontinued production and support. The STD5N20LT4 is an active product from STMicroelectronics with ongoing manufacturing and technical support availability.

Q: Are there compliance or regulatory differences?

A: The STD5N20LT4 is RoHS3 compliant, while the IRLR230ATF compliance status is not specified in the provided data. Both devices carry REACH Unaffected status and EAR99 ECCN classification. Both have MSL 1 (Unlimited) moisture sensitivity rating.

Q: How do the thermal characteristics compare?

A: The IRLR230ATF is rated for 2.5W at Ta and 48W at Tc. The STD5N20LT4 is rated for 33W at Tc. The higher on-state resistance and lower current rating of the STD5N20LT4 result in different thermal performance characteristics that must be evaluated against specific circuit operating conditions.

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