IRLR120 N-Channel MOSFET 100V 7.7A DPAK Equivalent & Substitute Parts

Part Overview

The IRLR120 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Vishay Siliconix, rated for 100V drain-to-source voltage with 7.7A continuous drain current at 25°C case temperature. The device is packaged in DPAK (TO-252-3) surface mount configuration and is classified as Active product status. Substitute parts are identified when the main part becomes unavailable, obsolete, or when design requirements necessitate alternative electrical or mechanical characteristics within the allowed parameter range for this MOSFET category.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	7.7	A (Tc)
Rds On (Max) @ Id, Vgs	270	mOhm @ 4.6A, 5V
Gate Threshold Voltage Vgs(th) (Max) @ Id	2	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12	nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	490	pF @ 25V
Power Dissipation (Max)	2.5 / 42	W (Ta) / W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	TO-252-3, DPAK	Surface Mount
RoHS Status	Non-compliant	—

Substitute Part Grouping Explanation

Substitute parts for the IRLR120 are classified based on strict electrical and mechanical parameter compatibility within the N-Channel MOSFET category. The substitution logic is determined by the following criteria:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal 100V
Package / Case: Must be TO-252-3 DPAK surface mount
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Mounting Type: Must be Surface Mount

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Acceptable range 6A to 21.7A (equal or higher current rating acceptable for direct substitution)
Rds On (Max): Lower values indicate improved performance; range 75mOhm to 270mOhm
Gate Threshold Voltage Vgs(th): Range 2V to 4V
Operating Temperature: Minimum -55°C, maximum 150°C to 175°C
RoHS Compliance: ROHS3 Compliant preferred for new designs

Substitute parts are grouped into two categories: Parametric Equivalents (identical electrical specifications, different packaging or compliance) and Manufacturer Recommended Alternatives (different electrical characteristics but functionally compatible within application scope).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Pd Max (W)	Tj Range (°C)	RoHS Status	Product Status
IRLR120	Vishay Siliconix	100	7.7	270 @ 4.6A, 5V	2 @ 250µA	12 @ 5V	490 @ 25V	42 (Tc)	-55 to 150	Non-compliant	Active
IRLR120PBF	Vishay Siliconix	100	7.7	270 @ 4.6A, 5V	2 @ 250µA	12 @ 5V	490 @ 25V	42 (Tc)	-55 to 150	ROHS3 Compliant	Active
IRLR120NTRLPBF	Infineon Technologies	100	10	185 @ 6A, 10V	2 @ 250µA	20 @ 5V	440 @ 25V	48 (Tc)	-55 to 175	ROHS3 Compliant	Not For New Designs
IRLR120NTRPBF	Infineon Technologies	100	10	185 @ 6A, 10V	2 @ 250µA	20 @ 5V	440 @ 25V	48 (Tc)	-55 to 175	ROHS3 Compliant	Active
IRFR120NTRPBF	Infineon Technologies	100	9.4	210 @ 5.6A, 10V	4 @ 250µA	25 @ 10V	330 @ 25V	48 (Tc)	-55 to 175	ROHS3 Compliant	Active
IRFR120ZTRPBF	Infineon Technologies	100	8.7	190 @ 5.2A, 10V	4 @ 250µA	10 @ 10V	310 @ 25V	35 (Tc)	-55 to 175	ROHS3 Compliant	Active
BUK7275-100A,118	Nexperia USA Inc.	100	21.7	75 @ 13A, 10V	4 @ 1mA	—	1210 @ 25V	89 (Tc)	-55 to 175	ROHS3 Compliant	Obsolete
STD6NF10T4	STMicroelectronics	100	6	250 @ 3A, 10V	4 @ 250µA	14 @ 10V	280 @ 25V	30 (Tc)	-65 to 175	ROHS3 Compliant	Active

Engineering Selection Recommendations

For Direct Replacement (Parametric Equivalent):

IRLR120PBF is the direct parametric equivalent to IRLR120. Both devices share identical electrical specifications (100V Vdss, 7.7A Id, 270mOhm Rds On). The primary difference is RoHS compliance status: IRLR120PBF is ROHS3 Compliant, whereas the original IRLR120 is non-compliant. Selection of IRLR120PBF is appropriate for applications requiring RoHS-compliant components or when the original part becomes unavailable.

For Enhanced Performance (Higher Current Rating):

IRLR120NTRPBF (Infineon Technologies, Active status) provides 10A continuous drain current versus 7.7A of the original, with improved Rds On of 185mOhm at 10V drive voltage. This part is suitable for applications requiring higher current capacity while maintaining 100V Vdss rating and DPAK packaging. Extended operating temperature range (-55°C to 175°C) provides additional thermal margin.

For Optimized Thermal Performance:

IRFR120ZTRPBF (Infineon Technologies, Active status) offers 8.7A continuous drain current with reduced power dissipation (35W Tc) and lower gate charge (10nC @ 10V), resulting in improved switching efficiency. This part is suitable for applications prioritizing thermal management and switching speed.

For Cost-Optimized Selection:

STD6NF10T4 (STMicroelectronics, Active status) provides 6A continuous drain current with 250mOhm Rds On. This part is suitable for applications where the 7.7A rating of the original IRLR120 exceeds actual current requirements, offering cost reduction while maintaining 100V Vdss and DPAK packaging.

For High-Current Applications:

BUK7275-100A,118 (Nexperia USA Inc., Obsolete status) provides 21.7A continuous drain current with significantly lower Rds On (75mOhm @ 13A, 10V). This part is suitable only for applications requiring substantially higher current capacity. Note: Product status is Obsolete; use only when current availability is confirmed and no active alternatives meet application requirements.

Compliance Considerations:

All recommended substitute parts except the original IRLR120 are ROHS3 Compliant. For new designs or applications requiring regulatory compliance, select from IRLR120PBF, IRLR120NTRPBF, IRFR120NTRPBF, IRFR120ZTRPBF, or STD6NF10T4. Prioritize parts with Active product status for long-term supply assurance.

Frequently Asked Questions (FAQ)

Q: Can IRLR120PBF be used as a direct replacement for IRLR120?

A: Yes. IRLR120PBF is a parametric equivalent with identical electrical specifications (100V Vdss, 7.7A Id, 270mOhm Rds On, 12nC gate charge). The only difference is RoHS compliance status. Both parts use DPAK packaging and are pin-compatible. Substitution is direct with no circuit modifications required.

Q: What is the difference between IRLR120NTRLPBF and IRLR120NTRPBF?

A: Both parts are manufactured by Infineon Technologies with identical electrical specifications (100V Vdss, 10A Id, 185mOhm Rds On). The primary difference is product status: IRLR120NTRLPBF is marked "Not For New Designs," while IRLR120NTRPBF is Active. For new designs, select IRLR120NTRPBF. Both are ROHS3 Compliant and use DPAK packaging.

Q: Can I use IRFR120NTRPBF in place of IRLR120?

A: IRFR120NTRPBF is functionally compatible but not a direct replacement. It provides 9.4A continuous drain current (versus 7.7A), with improved Rds On of 210mOhm at 10V drive voltage. Gate threshold voltage is 4V (versus 2V). Both maintain 100V Vdss and DPAK packaging. Substitution is acceptable for applications where the higher current rating and different gate characteristics do not conflict with circuit design.

Q: Is STD6NF10T4 suitable for applications requiring 7.7A continuous current?

A: No. STD6NF10T4 is rated for 6A continuous drain current, which is below the 7.7A specification of IRLR120. This part is suitable only for applications where actual current requirements do not exceed 6A. Use STD6NF10T4 only when design analysis confirms that peak and continuous current demands remain within 6A limits.

Q: Why is BUK7275-100A,118 marked as Obsolete?

A: BUK7275-100A,118 is classified as Obsolete by Nexperia USA Inc., indicating the manufacturer has discontinued active production and support. While inventory may remain available (69,136 pcs reported in stock), this part should be used only when current availability is confirmed and no active alternatives meet application requirements. For new designs, select from active-status alternatives such as IRLR120NTRPBF or IRFR120NTRPBF.

Q: What are the key electrical differences between IRLR120 and IRFR120ZTRPBF?

A: IRFR120ZTRPBF provides 8.7A continuous drain current (versus 7.7A), with lower Rds On of 190mOhm at 10V (versus 270mOhm at 5V). Gate threshold voltage is 4V (versus 2V). Gate charge is significantly lower at 10nC @ 10V (versus 12nC @ 5V), resulting in faster switching and reduced power dissipation (35W Tc versus 42W Tc). Both maintain 100V Vdss and DPAK packaging. Extended operating temperature range (-55°C to 175°C) provides additional thermal margin.

Q: Are all substitute parts available in the same DPAK package?

A: Yes. All substitute parts listed are packaged in TO-252-3 DPAK (2 Leads + Tab) surface mount configuration, identical to the original IRLR120. Pin configuration and PCB footprint compatibility are maintained across all substitutes. No layout modifications are required for mechanical substitution.

Q: Which substitute part offers the best thermal performance?

A: IRFR120ZTRPBF offers the lowest power dissipation at 35W (Tc), compared to 42W (Tc) for IRLR120. This part also features the lowest gate charge (10nC @ 10V), resulting in reduced switching losses. For applications prioritizing thermal management, IRFR120ZTRPBF is the recommended selection among active-status alternatives.

Q: Can I use a higher-rated current part as a substitute?

A: Yes, within design constraints. Parts with higher current ratings (such as IRLR120NTRPBF at 10A or BUK7275-100A,118 at 21.7A) can substitute for IRLR120 in applications where the original 7.7A rating is not fully utilized. However, verify that gate drive voltage, Rds On characteristics, and thermal dissipation requirements are compatible with circuit design. Higher-rated parts may have different gate threshold voltages and switching characteristics that require circuit analysis.

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