IRGP4750D-EPBF Equivalent & Substitute Parts

Part Overview

The IRGP4750D-EPBF is a 650V, 70A IGBT manufactured by Infineon Technologies in TO-247AD package configuration. This component is classified as Obsolete, making identification of functionally equivalent substitute parts essential for ongoing system support and new design alternatives. The part delivers 273W maximum power dissipation with switching energy specifications of 1.3mJ (on) and 500µJ (off), suitable for industrial power conversion applications requiring high voltage and moderate current handling.

Due to its obsolete status, equivalent substitute parts must maintain electrical compatibility within the voltage, current, and thermal operating ranges while accommodating the through-hole TO-247-3 package standard.

Substiute Parts

IRGP4750D-EPBF

Infineon TechnologiesIn Stock: 1083IRGP4750D-EPBF Datasheet

Current PartRFQ

IKW50N60DTPXKSA1

Infineon TechnologiesIn Stock: 1283IKW50N60DTPXKSA1 Datasheet

MFR RecommendedRFQ

STGW60H65DFB

STMicroelectronicsIn Stock: 27185STGW60H65DFB Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRGP4750D-EPBF are selected based on the following electrical and mechanical compatibility criteria:

Primary Substitution Parameters:

• Voltage rating must equal or exceed 650V collector-emitter breakdown voltage
• Current rating (Ic) must equal or exceed 70A continuous collector current
• Package must be TO-247-3 through-hole configuration
• Operating temperature range must encompass -40°C to 175°C
• Input type must be Standard gate drive compatible

Secondary Compatibility Factors:

• Power dissipation capability (273W minimum)
• Switching energy characteristics within acceptable application margins
• Gate charge and switching delay parameters suitable for existing gate drive circuits

The two identified substitute parts meet these criteria with voltage ratings of 600V and 650V respectively, current ratings of 80A, and identical TO-247-3 package specifications. Both maintain standard input type gate drive compatibility and operate across the required temperature range.

Parameter Comparison

Engineering Selection Recommendations

STGW60H65DFB (STMicroelectronics) - Primary Recommendation

The STGW60H65DFB is the preferred substitute for new designs and ongoing system support. This part maintains identical 650V voltage rating to the original IRGP4750D-EPBF, ensuring direct electrical compatibility without derating. The Active product status provides long-term availability and supply chain stability. ROHS3 compliance and REACH Unaffected certification satisfy modern regulatory requirements. The 80A current rating provides 14% margin above the original 70A specification, while the 375W power dissipation exceeds the original 273W by 37%, accommodating thermal design margins. Switching energy characteristics (1.09mJ on, 626µJ off) are favorable for efficiency-sensitive applications.

IKW50N60DTPXKSA1 (Infineon Technologies) - Secondary Option

The IKW50N60DTPXKSA1 offers an alternative from the original manufacturer with Trench Field Stop technology. However, the 600V voltage rating represents a 50V reduction from the original 650V specification, requiring application-level voltage margin verification. The Not For New Designs status indicates limited future availability. ROHS3 compliance is confirmed. The 80A current rating and 319.2W power dissipation both exceed original specifications. Gate charge of 249nC is significantly higher than the original 105nC, requiring gate drive circuit evaluation for switching frequency compatibility.

Compliance and Certification Status

Both substitute parts maintain REACH Unaffected and EAR99 ECCN classifications consistent with the original component. ROHS3 compliance is confirmed for both alternatives, supporting environmental and regulatory requirements for industrial applications.

Frequently Asked Questions (FAQ)

Q: Can the STGW60H65DFB directly replace the IRGP4750D-EPBF without circuit modifications?

A: The STGW60H65DFB maintains identical TO-247-3 package pinout and 650V voltage rating, enabling direct mechanical and electrical substitution. Standard gate drive circuits compatible with the original part operate with the substitute. However, the higher gate charge (306nC vs. 105nC) and different switching delay characteristics (51ns/160ns vs. 50ns/105ns) may affect switching frequency performance in applications operating above 50kHz. Circuit-level thermal and EMI performance should be evaluated for high-frequency applications.

Q: What is the voltage margin impact of using the IKW50N60DTPXKSA1 with its 600V rating instead of 650V?

A: The 600V rating provides 50V less headroom than the original 650V specification. In applications with 400V DC bus voltage (typical industrial inverter design), this reduces the safety margin from 250V to 200V. Applications operating at or near maximum bus voltage require verification that transient overvoltage conditions remain within the 600V absolute maximum rating.

Q: Are the TO-247-3 packages of all three parts mechanically identical?

A: Yes. The IRGP4750D-EPBF, IKW50N60DTPXKSA1, and STGW60H65DFB all use TO-247-3 through-hole package configuration with identical pin spacing and mounting hole patterns. PCB layout and heatsink mounting interfaces require no modification for physical substitution.

Q: How do the switching energy differences affect application performance?

A: The STGW60H65DFB exhibits lower switching energy (1.09mJ on, 626µJ off) compared to the original (1.3mJ on, 500µJ off), resulting in reduced switching losses and improved efficiency. The IKW50N60DTPXKSA1 shows higher switching energy (1.53mJ on, 850µJ off), increasing switching losses. Gate drive circuit design and switching frequency determine whether these differences are significant. Applications operating below 20kHz typically show minimal performance impact.

Q: What is the significance of the Trench Field Stop technology in the substitute parts?

A: Both substitute parts incorporate Trench Field Stop (TFS) technology, which is a manufacturing process enhancement compared to standard IGBT designs. This technology reduces switching losses and improves reverse recovery characteristics. The STGW60H65DFB demonstrates this with 60ns reverse recovery time versus the original 150ns, enabling higher switching frequencies with lower EMI generation.

Q: Can the IKW50N60DTPXKSA1 be used in applications requiring 650V voltage rating?

A: The 600V rating of the IKW50N60DTPXKSA1 is insufficient for applications designed around 650V component specifications. Use of this part in such applications violates absolute maximum ratings and creates reliability risk. The STGW60H65DFB is the appropriate choice for 650V-rated system designs.

Q: What inventory considerations apply to these substitute parts?

A: The STGW60H65DFB offers the highest inventory availability (27,100 pieces) with Active product status, ensuring long-term supply continuity. The IKW50N60DTPXKSA1 maintains 1,204 pieces in stock but carries Not For New Designs status, indicating eventual discontinuation. The original IRGP4750D-EPBF, though showing 1,020 pieces available, is Obsolete and should not be specified for new designs.