IRGP4262DPBF IGBT Equivalent & Substitute Parts

Part Overview

The IRGP4262DPBF is a 650V 60A IGBT manufactured by Infineon Technologies in TO-247AC package configuration. This device is classified as Obsolete product status, making identification of equivalent and substitute parts essential for ongoing system support, design updates, and procurement continuity. The IGBT operates across an industrial temperature range of -40°C to 175°C junction temperature and delivers 250W maximum power dissipation, suitable for power conversion and switching applications requiring moderate current handling at high voltage levels.

Substiute Parts

IRGP4262DPBF
Infineon TechnologiesIn Stock: 1478IRGP4262DPBF Datasheet
IRGP4262DPBF
Current Part
IKW50N60DTPXKSA1
Infineon TechnologiesIn Stock: 1283IKW50N60DTPXKSA1 Datasheet
IKW50N60DTPXKSA1
MFR Recommended
STGW40H65DFB
STMicroelectronicsIn Stock: 6626STGW40H65DFB Datasheet
STGW40H65DFB
Direct

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 96 A
Power - Max 250 W
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 24A V
Gate Charge 70 nC
Switching Energy (on/off) 520µJ / 240µJ µJ
Td (on/off) @ 25°C 24ns / 73ns ns
Operating Temperature Range -40 to 175 °C (TJ)
Package / Case TO-247-3 -
Mounting Type Through Hole -

Substitute Part Grouping Explanation

Substitution of the IRGP4262DPBF is determined by alignment of the following critical electrical and mechanical parameters:

Voltage Rating: Substitute parts must maintain minimum 650V collector-emitter breakdown voltage to ensure safe operation within the original design envelope.

Current Rating: Substitute parts must support minimum 60A continuous collector current (Ic). Parts with higher current ratings (80A) are acceptable as they provide design margin without requiring circuit modification.

Package Configuration: All substitute parts must use TO-247-3 through-hole mounting to ensure mechanical and thermal compatibility with existing PCB layouts and heatsink interfaces.

Operating Temperature: Substitute parts must support the full -40°C to 175°C junction temperature range to maintain reliability across application environments.

IGBT Type: Both standard and Trench Field Stop IGBT architectures are acceptable substitutes, as both provide compatible gate drive characteristics and switching performance within the specified test conditions.

Compliance & Status: Substitute parts must maintain REACH compliance and EAR99 export classification consistent with the original component.


Parameter Comparison

Parameter IRGP4262DPBF IKW50N60DTPXKSA1 STGW40H65DFB
Manufacturer Infineon Technologies Infineon Technologies STMicroelectronics
Voltage - Collector Emitter Breakdown (Max) 650 V 600 V 650 V
Current - Collector (Ic) (Max) 60 A 80 A 80 A
Current - Collector Pulsed (Icm) 96 A 150 A 160 A
Power - Max 250 W 319.2 W 283 W
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 24A 1.8V @ 15V, 50A 2V @ 15V, 40A
Gate Charge 70 nC 249 nC 210 nC
Td (on/off) @ 25°C 24ns / 73ns 20ns / 215ns 40ns / 142ns
Operating Temperature Range -40 to 175 °C -40 to 175 °C -55 to 175 °C
Package / Case TO-247-3 TO-247-3 TO-247-3
Mounting Type Through Hole Through Hole Through Hole
Product Status Obsolete Not For New Designs Active
RoHS Status Not Specified ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

IKW50N60DTPXKSA1 (Infineon Technologies)

This substitute provides 80A continuous current capability against the original 60A specification, delivering 27% additional current margin. Voltage rating of 600V is 50V lower than the original 650V; this represents a 7.7% reduction in voltage headroom and requires verification that the application does not operate near 600V limits. The part carries "Not For New Designs" status, indicating Infineon has transitioned this product line. ROHS3 compliance and REACH unaffected status maintain regulatory alignment. Gate charge of 249nC is 3.6× higher than the original 70nC, requiring gate driver evaluation for switching frequency and power dissipation impact.

STGW40H65DFB (STMicroelectronics)

This substitute maintains the original 650V voltage rating and provides 80A continuous current (33% above original 60A). Active product status indicates ongoing manufacturer support and availability. ROHS3 compliance and REACH unaffected status satisfy regulatory requirements. Operating temperature range extends to -55°C minimum, providing 15°C additional low-temperature margin. Gate charge of 210nC is 3× higher than the original, requiring gate driver assessment. Switching energy profile (498µJ on, 363µJ off) differs from the original (520µJ on, 240µJ off), with turn-off energy increased by 51%; this impacts thermal design and switching frequency capability.


Frequently Asked Questions (FAQ)

Q: Can IKW50N60DTPXKSA1 be used in applications designed for IRGP4262DPBF?

A: IKW50N60DTPXKSA1 is electrically compatible for applications operating below 600V. The 600V voltage rating is 50V lower than the original 650V specification. If the application circuit operates near or above 600V, this substitute is not suitable. Gate charge is 3.6× higher (249nC vs. 70nC), requiring gate driver verification to ensure adequate switching speed and acceptable power dissipation.

Q: What is the primary difference between IKW50N60DTPXKSA1 and STGW40H65DFB?

A: IKW50N60DTPXKSA1 uses Trench Field Stop architecture with 600V rating and higher gate charge (249nC). STGW40H65DFB also uses Trench Field Stop architecture but maintains 650V rating with lower gate charge (210nC) and active product status. STGW40H65DFB is the preferred choice for new applications due to active status and voltage rating alignment.

Q: Are all substitute parts pin-compatible with IRGP4262DPBF?

A: Yes. All substitute parts use TO-247-3 package configuration with identical pin assignments (Gate, Collector, Emitter). Physical mounting to heatsinks and PCB layouts remains unchanged.

Q: What impact does higher gate charge have on circuit design?

A: Gate charge directly affects gate driver current requirements and switching speed. IKW50N60DTPXKSA1 (249nC) and STGW40H65DFB (210nC) require higher gate driver output current compared to the original IRGP4262DPBF (70nC). Existing gate driver circuits must be evaluated to confirm adequate current sourcing capability at the target switching frequency.

Q: Which substitute part is recommended for new designs?

A: STGW40H65DFB is recommended for new designs. It carries Active product status, maintains 650V voltage rating matching the original specification, provides ROHS3 compliance, and offers extended low-temperature operation (-55°C minimum). IKW50N60DTPXKSA1 carries "Not For New Designs" status and should be reserved for legacy system support only.

Q: Do substitute parts require PCB layout modifications?

A: No. Both substitute parts use TO-247-3 through-hole package with identical mechanical footprint and thermal interface requirements as IRGP4262DPBF. Existing PCB layouts and heatsink assemblies are directly compatible without modification.

Q: What is the voltage derating consideration for IKW50N60DTPXKSA1?

A: IKW50N60DTPXKSA1 has 600V maximum rating versus the original 650V. In applications with 600V to 650V operating margins, this 50V reduction may be insufficient. Circuit analysis must confirm that maximum transient and steady-state voltages remain below 600V with adequate safety margin.

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