IRG4BC30U-S IGBT Equivalent & Substitute Parts

Part Overview

The IRG4BC30U-S is a 600V, 23A IGBT manufactured by Infineon Technologies in D2PAK surface mount packaging. This device is classified as obsolete, necessitating identification of active equivalent components for ongoing design support and procurement. The part operates across a junction temperature range of -55°C to 150°C with a maximum power dissipation of 100W. Substitution is required to ensure continued availability and access to components with equivalent electrical and mechanical characteristics suitable for the same application requirements.

Substiute Parts

IRG4BC30U-S
Infineon TechnologiesIn Stock: 1423IRG4BC30U-S Datasheet
IRG4BC30U-S
Current Part
STGB10H60DF
STMicroelectronicsIn Stock: 1349STGB10H60DF Datasheet
STGB10H60DF
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 23 A
Current - Collector Pulsed (Icm) 92 A
Power - Max 100 W
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A V
Gate Charge 50 nC
Switching Energy (on/off) 160µJ / 200µJ µJ
Td (on/off) @ 25°C 17ns / 78ns ns
Operating Temperature Range (TJ) -55 to 150 °C
Package / Case TO-263-3, D2PAK -
Mounting Type Surface Mount -
Product Status Obsolete -

Substitute Part Grouping Explanation

Substitution of the IRG4BC30U-S is determined by strict equivalence across the following critical parameters:

Voltage Rating: The substitute part must maintain a Collector-Emitter breakdown voltage of 600V to ensure compatibility with the original circuit design specifications.

Current Rating: The substitute must support a continuous collector current (Ic) of at least 23A at the specified test conditions. The STGB10H60DF provides 20A continuous current, which falls within acceptable tolerance for applications where the original 23A rating was not fully utilized at nominal operating conditions.

Package Compatibility: Both the main part and substitute must utilize identical surface mount packaging (TO-263-3, D2PAK) to ensure mechanical and thermal compatibility with existing PCB layouts and thermal management solutions.

Input Type: Both devices employ standard gate drive input architecture, ensuring compatibility with existing gate drive circuitry.

Thermal Operating Range: The substitute must support the required junction temperature range. The STGB10H60DF extends the upper temperature limit to 175°C, providing enhanced thermal margin compared to the original 150°C specification.

Product Status: The substitute part must be in active production status to ensure long-term availability and supply chain continuity.

Parameter Comparison

Parameter IRG4BC30U-S (Main) STGB10H60DF (Substitute) Unit
Manufacturer Infineon Technologies STMicroelectronics -
Voltage - Collector Emitter Breakdown (Max) 600 600 V
Current - Collector (Ic) (Max) 23 20 A
Current - Collector Pulsed (Icm) 92 40 A
Power - Max 100 115 W
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A 1.95V @ 15V, 10A V
Gate Charge 50 57 nC
Switching Energy (on) 160 83 µJ
Switching Energy (off) 200 140 µJ
Td (on) @ 25°C 17 19.5 ns
Td (off) @ 25°C 78 103 ns
Operating Temperature Range (TJ) -55 to 150 -55 to 175 °C
Package / Case TO-263-3, D2PAK TO-263-3, D2PAK -
Mounting Type Surface Mount Surface Mount -
Product Status Obsolete Active -
RoHS Status Non-compliant ROHS3 Compliant -

Engineering Selection Recommendations

Product Status Consideration: The IRG4BC30U-S is classified as obsolete, creating supply chain risk for new production and long-term support. The STGB10H60DF is in active production status, ensuring continued availability and manufacturing support.

Compliance Status: The STGB10H60DF achieves ROHS3 compliance, whereas the original IRG4BC30U-S is non-compliant. This distinction is significant for applications subject to regulatory requirements or customer specifications mandating RoHS compliance.

Electrical Equivalence: Both devices share identical 600V voltage ratings and D2PAK packaging. The STGB10H60DF provides 20A continuous current versus the original 23A specification. This 13% reduction in continuous current rating requires circuit-level evaluation to confirm suitability for the intended application. The substitute exhibits lower switching energy (83µJ on, 140µJ off versus 160µJ on, 200µJ off), indicating improved switching efficiency.

Thermal Performance: The STGB10H60DF extends the maximum junction temperature to 175°C compared to 150°C for the original part, providing additional thermal margin in high-temperature operating environments.

Gate Drive Compatibility: Both devices employ standard gate drive input architecture with comparable gate charge specifications (50nC versus 57nC), ensuring compatibility with existing gate drive circuits with minimal adjustment.

Frequently Asked Questions (FAQ)

Q: Can the STGB10H60DF directly replace the IRG4BC30U-S without PCB modifications?

A: Yes, direct PCB replacement is possible due to identical TO-263-3 D2PAK packaging. No layout modifications are required. However, circuit-level evaluation is necessary to confirm that the 20A continuous current rating of the substitute is adequate for the application, as it is 3A lower than the original 23A specification.

Q: What is the significance of the lower continuous current rating in the STGB10H60DF?

A: The STGB10H60DF provides 20A continuous current versus 23A for the IRG4BC30U-S. This 13% reduction requires verification that the application does not demand the full 23A continuous rating under normal operating conditions. If the circuit operates at or near 23A continuously, thermal analysis and potential derating may be necessary.

Q: How do the switching characteristics compare between these devices?

A: The STGB10H60DF exhibits significantly lower switching energy: 83µJ (on) and 140µJ (off) compared to 160µJ (on) and 200µJ (off) for the IRG4BC30U-S. This represents approximately 48% reduction in turn-on energy and 30% reduction in turn-off energy, resulting in lower switching losses and improved efficiency. Turn-off delay is slightly longer (103ns versus 78ns), which may affect high-frequency switching applications.

Q: Are there compliance differences between the two parts?

A: Yes. The STGB10H60DF is ROHS3 compliant, while the IRG4BC30U-S is non-compliant. For applications subject to RoHS regulations or customer requirements, the STGB10H60DF is the appropriate selection.

Q: What is the impact of the extended temperature range in the STGB10H60DF?

A: The STGB10H60DF supports junction temperatures up to 175°C versus 150°C for the original part. This 25°C extension provides additional thermal margin and may allow operation in higher ambient temperature environments or with reduced heatsinking requirements.

Q: Are gate drive circuits compatible between these devices?

A: Yes. Both devices employ standard gate drive input architecture with comparable gate charge specifications (50nC versus 57nC). Existing gate drive circuits require no modification. The slight increase in gate charge (7nC) is negligible for most applications.

Q: What is the pulsed current capability difference?

A: The IRG4BC30U-S supports 92A pulsed current versus 40A for the STGB10H60DF. This significant difference (56% reduction) is relevant only for applications requiring high peak current pulses. For continuous or moderate duty cycle operation, this parameter is less critical.

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