IRFZ44ES N-Channel MOSFET 60V 48A D2PAK Equivalent & Substitute Parts

Part Overview

The IRFZ44ES is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 60V drain-to-source voltage and 48A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and procurement.

The IRFZ44ES serves in switching applications requiring moderate voltage and current handling in compact surface mount form factors. Due to its obsolete status, equivalent parts with active product status or improved specifications are required for new designs and production continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	48	A
On-Resistance (Rds On) @ 29A, 10V	23	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	60	nC
Power Dissipation (Max)	110	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IRFZ44ES is determined by the following critical parameters:

Voltage Rating (Vdss): Substitute parts must equal or exceed 60V. Parts rated at 100V are acceptable as they provide backward compatibility with higher voltage margin.

Current Rating (Id): Substitute parts must equal or exceed 48A continuous drain current at 25°C. Parts rated at 50A or higher satisfy this requirement.

On-Resistance (Rds On): Substitute parts should maintain comparable or lower on-resistance to preserve thermal performance and switching efficiency. The reference specification is 23 mOhm at rated conditions.

Package and Mounting: All substitute parts must use D2PAK (TO-263-3) surface mount packaging to ensure mechanical and thermal compatibility with existing PCB layouts.

Operating Temperature: All substitute parts must support the full -55°C to 175°C operating range.

Gate Charge (Qg): Substitute parts with lower gate charge improve switching speed and reduce driver power dissipation.

Substitute parts are grouped into two categories: direct replacements with identical or superior electrical specifications, and active-status alternatives that provide improved performance or compliance characteristics.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Status	RoHS
IRFZ44ES	Infineon	60	48	23 @ 29A, 10V	60 @ 10V	110	Obsolete	Non-compliant
IRFZ44SPBF	Vishay Siliconix	60	50	28 @ 31A, 10V	67 @ 10V	150	Active	ROHS3
IRFZ44STRLPBF	Vishay Siliconix	60	50	28 @ 31A, 10V	67 @ 10V	150	Active	ROHS3
FQB50N06TM	onsemi	60	50	22 @ 25A, 10V	41 @ 10V	120	Obsolete	ROHS3
HUF76429S3ST	onsemi	60	47	22 @ 47A, 10V	46 @ 10V	110	Active	ROHS3
STB55NF06T4	STMicroelectronics	60	50	18 @ 27.5A, 10V	60 @ 10V	110	Active	ROHS3
STB55NF06LT4	STMicroelectronics	60	55	18 @ 27.5A, 10V	37 @ 4.5V	95	Active	ROHS3
PSMN015-60BS,118	Nexperia USA Inc.	60	50	14.8 @ 15A, 10V	20.9 @ 10V	86	Active	ROHS3
IPB50N10S3L16ATMA1	Infineon Technologies	100	50	15.4 @ 50A, 10V	64 @ 10V	100	Active	ROHS3

Engineering Selection Recommendations

Direct Voltage and Current Equivalents (60V, 48A+):

Parts meeting or exceeding the IRFZ44ES electrical specifications within the 60V class include IRFZ44SPBF, IRFZ44STRLPBF, FQB50N06TM, HUF76429S3ST, STB55NF06T4, STB55NF06LT4, and PSMN015-60BS,118. All maintain D2PAK packaging compatibility.

Active Status Priority:

For new designs and production continuity, IRFZ44SPBF, IRFZ44STRLPBF, HUF76429S3ST, STB55NF06T4, STB55NF06LT4, and PSMN015-60BS,118 are classified as active products. These parts provide ongoing manufacturer support and supply chain availability.

RoHS Compliance:

All substitute parts listed are ROHS3 compliant, whereas the IRFZ44ES is RoHS non-compliant. Selection of RoHS3-compliant substitutes aligns with current regulatory requirements and procurement standards.

Thermal Performance:

PSMN015-60BS,118 and STB55NF06LT4 demonstrate superior on-resistance characteristics (14.8 mOhm and 18 mOhm respectively), resulting in lower power dissipation and improved thermal efficiency compared to the IRFZ44ES reference specification of 23 mOhm.

Gate Charge Optimization:

PSMN015-60BS,118 exhibits the lowest gate charge (20.9 nC), reducing driver circuit power requirements. STB55NF06LT4 matches the IRFZ44ES gate charge specification (60 nC) while providing superior on-resistance.

Higher Voltage Rating Alternative:

IPB50N10S3L16ATMA1 provides 100V rating with active status and ROHS3 compliance. This part is suitable for applications requiring voltage margin above 60V or where future design flexibility is required.

Frequently Asked Questions (FAQ)

Q: Can IRFZ44SPBF or IRFZ44STRLPBF directly replace IRFZ44ES in existing designs?

A: Yes. Both parts maintain identical 60V voltage rating, exceed the 48A current requirement at 50A, use D2PAK packaging, and support the full -55°C to 175°C operating range. The primary difference is packaging format (tube versus tape & reel) and active product status. On-resistance is slightly higher (28 mOhm versus 23 mOhm), which is acceptable for most switching applications.

Q: What is the advantage of selecting STB55NF06T4 or STB55NF06LT4 over IRFZ44SPBF?

A: STB55NF06T4 and STB55NF06LT4 provide superior on-resistance (18 mOhm), resulting in lower power dissipation and improved thermal performance. STB55NF06LT4 additionally provides 55A current rating and lower gate charge (37 nC at 4.5V), enabling faster switching and reduced driver power consumption.

Q: Is PSMN015-60BS,118 suitable for direct replacement?

A: Yes. PSMN015-60BS,118 maintains 60V rating and 50A current capability in D2PAK packaging. It provides the lowest on-resistance (14.8 mOhm) and gate charge (20.9 nC) among all listed substitutes, resulting in superior thermal and switching performance. This part is recommended for applications prioritizing efficiency.

Q: When should IPB50N10S3L16ATMA1 be selected instead of 60V alternatives?

A: IPB50N10S3L16ATMA1 is selected when applications require voltage ratings above 60V or when design specifications call for higher voltage margin. The 100V rating provides compatibility with higher voltage bus systems while maintaining 50A current capability and superior on-resistance (15.4 mOhm). This part is not a direct replacement but a higher-voltage alternative.

Q: Are all substitute parts available in the same packaging options?

A: All substitute parts use D2PAK (TO-263-3) surface mount packaging. Packaging format variations (tube, tape & reel, cut tape) differ by supplier but do not affect electrical or thermal performance. Selection should be based on procurement and assembly process requirements.

Q: What is the impact of higher gate charge on circuit design?

A: Gate charge affects driver circuit power dissipation and switching speed. IRFZ44SPBF and IRFZ44STRLPBF have higher gate charge (67 nC) compared to IRFZ44ES (60 nC), requiring slightly higher driver current. PSMN015-60BS,118 and STB55NF06LT4 have lower gate charge, reducing driver power requirements and enabling faster switching transitions.

Q: Can FQB50N06TM be used as a substitute despite obsolete status?

A: FQB50N06TM meets electrical specifications (60V, 50A, 22 mOhm on-resistance) and is ROHS3 compliant. However, its obsolete product status limits long-term supply availability. Active-status alternatives such as STB55NF06T4 or PSMN015-60BS,118 are preferred for new designs and production continuity.

Q: What thermal considerations apply when substituting parts with different on-resistance values?

A: Lower on-resistance reduces conduction losses and power dissipation. PSMN015-60BS,118 (14.8 mOhm) and STB55NF06LT4 (18 mOhm) dissipate less power than IRFZ44ES (23 mOhm), potentially allowing reduced heatsink requirements or improved thermal margin. PCB thermal design should be verified for each substitute to ensure adequate heat dissipation.

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