IRFSL7540PBF N-Channel MOSFET 60V 110A Equivalent & Substitute Parts

Part Overview

The IRFSL7540PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 110A continuous drain current at 25°C. This device features the HEXFET® and StrongIRFET™ series technology in a Through Hole TO-262 package configuration. The part is currently classified as Obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain compatibility with the 60V voltage class, similar current handling capability, identical package type, and equivalent thermal performance characteristics.

Substiute Parts

IRFSL7540PBF

Infineon TechnologiesIn Stock: 790IRFSL7540PBF Datasheet

Current PartRFQ

IRFSL3306PBF

Infineon TechnologiesIn Stock: 1469IRFSL3306PBF Datasheet

MFR RecommendedRFQ

IPI040N06N3GXKSA1

Infineon TechnologiesIn Stock: 1589IPI040N06N3GXKSA1 Datasheet

MFR RecommendedRFQ

N0603N-S23-AY

Renesas Electronics CorporationIn Stock: 2461N0603N-S23-AY Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRFSL7540PBF is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal 60V
• Package Type: Must be TO-262 or equivalent mechanical footprint (TO-262-3, I2PAK, TO-262AA)
• Mounting Type: Must be Through Hole
• FET Type: Must be N-Channel MOSFET
• Technology: Metal Oxide Semiconductor (MOSFET)
• Operating Temperature Range: Must support -55°C to 175°C minimum
• RoHS Compliance: ROHS3 Compliant required

Performance Parameters for Functional Equivalence:

• Continuous Drain Current (Id): Minimum 100A at 25°C
• On-State Resistance (Rds On): Lower or equivalent values preferred
• Power Dissipation: Minimum 156W at case temperature
• Gate Charge (Qg): Similar gate drive requirements
• Input Capacitance (Ciss): Similar switching characteristics

All three substitute parts meet the mandatory compatibility criteria and maintain functional equivalence within the 60V N-Channel MOSFET class.

Parameter Comparison

Engineering Selection Recommendations

IRFSL3306PBF (Infineon Technologies)

The IRFSL3306PBF is the primary recommended substitute. This part maintains Active product status, ensuring long-term availability and manufacturing support. It provides superior performance with 120A continuous drain current versus the original 110A specification, improved on-state resistance of 4.2mOhm, and increased power dissipation capability of 230W. The HEXFET® series designation confirms compatibility with the original design intent. All compliance certifications match the main part: ROHS3 Compliant, REACH Unaffected, and identical ECCN/HTSUS classifications. Gate charge is reduced to 120nC, offering improved switching efficiency.

IPI040N06N3GXKSA1 (Infineon Technologies)

This OptiMOS™ series device provides an alternative from Infineon with Active product status. The part delivers 90A continuous drain current with superior on-state resistance of 4.0mOhm and reduced gate charge of 98nC, enabling lower switching losses. Power dissipation is rated at 188W. The PG-TO262-3 package maintains mechanical and electrical compatibility with TO-262-3 footprints. This option is suitable for applications where lower gate charge and improved efficiency are prioritized over maximum current capacity.

N0603N-S23-AY (Renesas Electronics Corporation)

This Renesas part offers an alternative from a different manufacturer with Active product status. It provides 100A continuous drain current with 4.6mOhm on-state resistance and 156W power dissipation. The part maintains full TO-262-3 package compatibility and ROHS3 compliance. However, the maximum operating temperature is limited to 150°C (versus 175°C for Infineon parts), and REACH Status is listed as Affected. This option is suitable for applications operating within the reduced temperature range.

Frequently Asked Questions (FAQ)

Q: Can the IRFSL3306PBF directly replace the IRFSL7540PBF in existing designs?

A: Yes. Both parts share identical 60V Vdss rating, N-Channel MOSFET technology, TO-262-3 package configuration, and -55°C to 175°C operating temperature range. The IRFSL3306PBF provides higher current capacity (120A vs. 110A) and improved thermal performance (230W vs. 160W), making it a direct functional upgrade. Pin-to-pin compatibility is maintained.

Q: What is the primary difference between the Infineon IRFSL3306PBF and IPI040N06N3GXKSA1?

A: Both are Infineon 60V N-Channel MOSFETs in TO-262 packages. The IRFSL3306PBF (HEXFET® series) is optimized for higher current capacity at 120A with 4.2mOhm Rds On. The IPI040N06N3GXKSA1 (OptiMOS™ series) operates at 90A with superior 4.0mOhm Rds On and lower gate charge (98nC), making it more efficient for switching applications. Selection depends on whether maximum current or switching efficiency is the design priority.

Q: Why does the N0603N-S23-AY have a lower maximum operating temperature?

A: The N0603N-S23-AY from Renesas is specified with a maximum junction temperature of 150°C, compared to 175°C for the Infineon parts. This is a manufacturer-specific rating and does not indicate inferior performance. Applications operating within the 150°C limit can use this part without restriction. Applications requiring operation above 150°C must use the Infineon alternatives.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All three substitute parts carry ROHS3 Compliant certification. The main part IRFSL7540PBF also maintains ROHS3 compliance. This ensures compatibility with RoHS-regulated supply chains and end-use applications.

Q: What is the significance of the different series designations (HEXFET®, OptiMOS™)?

A: Series designations indicate the internal technology platform and optimization focus. HEXFET® represents Infineon's established high-current MOSFET technology. OptiMOS™ represents Infineon's optimized platform for lower on-state resistance and improved efficiency. Both are mature, production-proven technologies suitable for industrial applications. Series designation does not affect pin compatibility or package equivalence.

Q: Can I use the IPI040N06N3GXKSA1 if my application requires 110A continuous current?

A: No. The IPI040N06N3GXKSA1 is rated for 90A continuous drain current, which is below the 110A requirement. Using this part in a 110A application would exceed its rated current capacity and create reliability risk. Use either the IRFSL3306PBF (120A) or N0603N-S23-AY (100A) for applications requiring 110A operation.

Q: What is the REACH status difference between the Infineon and Renesas parts?

A: The Infineon parts (IRFSL3306PBF and IPI040N06N3GXKSA1) are listed as REACH Unaffected, indicating no REACH-regulated substances of concern. The N0603N-S23-AY is listed as REACH Affected, meaning it may contain substances subject to REACH regulations. Applications in REACH-regulated markets should verify compliance requirements with the supplier before selection.

Q: Are the gate charge specifications comparable across all parts?

A: Gate charge values are comparable but measured at different conditions. IRFSL7540PBF: 130nC @ 10V; IRFSL3306PBF: 120nC @ 10V; IPI040N06N3GXKSA1: 98nC @ 10V; N0603N-S23-AY: 133nC @ 10V. Lower gate charge reduces driver power requirements and switching losses. The IPI040N06N3GXKSA1 offers the lowest gate charge for efficiency-critical applications.

Q: Is the TO-262-3 package identical across all parts?

A: Yes. All parts use TO-262-3 Long Leads configuration with identical mechanical footprint, pin spacing, and mounting requirements. The IPI040N06N3GXKSA1 uses the designation PG-TO262-3, which is functionally equivalent to TO-262-3. All parts are Through Hole mounted and directly interchangeable at the PCB level.