IRFSL4020PBF N-Channel MOSFET 200V 18A Equivalent & Substitute Parts

Part Overview

The IRFSL4020PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage and 18A continuous drain current in a Through Hole TO-262 package. This device is classified as Obsolete, making identification of functionally equivalent substitute components essential for ongoing design support and production continuity. The IRFSL4020PBF delivers 100W maximum power dissipation and operates across the temperature range of -55°C to 175°C (junction temperature).

Substiute Parts

IRFSL4020PBF

Infineon TechnologiesIn Stock: 15262IRFSL4020PBF Datasheet

Current PartRFQ

IRF640NLPBF

Infineon TechnologiesIn Stock: 2232IRF640NLPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFSL4020PBF is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

• Drain to Source Voltage (Vdss): 200V minimum
• Continuous Drain Current (Id): 18A minimum at 25°C
• Gate Drive Voltage: 10V maximum for Rds On specification
• Gate Threshold Voltage (Vgs(th)): Within acceptable switching range
• Maximum Gate Voltage (Vgs): ±20V or greater
• Operating Temperature Range: -55°C to 175°C minimum

Mechanical Equivalence Criteria:

• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2PAK, or TO-262AA compatible
• Lead configuration: Direct pin-for-pin compatibility

The IRF640NLPBF meets all electrical and mechanical substitution criteria. While the IRF640NLPBF exhibits higher power dissipation (150W versus 100W) and different on-resistance and gate charge characteristics, these represent performance enhancements rather than incompatibilities. The substitute maintains identical voltage and current ratings, gate drive voltage, maximum gate voltage, and thermal operating range.

Parameter Comparison

Engineering Selection Recommendations

The IRF640NLPBF serves as a direct electrical and mechanical substitute for the IRFSL4020PBF. Both devices are classified as Obsolete products from Infineon Technologies, sharing identical voltage and current ratings, gate drive specifications, and thermal operating ranges. Both components maintain REACH Unaffected status and EAR99 export classification.

The IRF640NLPBF is distinguished by ROHS3 Compliance certification, whereas the IRFSL4020PBF compliance status is not specified in the provided data. The IRF640NLPBF belongs to the HEXFET® series, indicating advanced process technology.

Electrical performance differences between the two devices are as follows: the IRF640NLPBF exhibits higher on-resistance (150 mOhm versus 105 mOhm at 11A, 10V) and higher gate charge (67 nC versus 29 nC at 10V), but delivers superior power dissipation capability (150W versus 100W). These characteristics indicate the IRF640NLPBF is suitable for applications where thermal management is less constrained or where gate drive complexity is acceptable.

Both devices are packaged in TO-262-3 Long Leads, I2PAK, or TO-262AA configurations, ensuring pin-for-pin compatibility in Through Hole mounting applications.

Frequently Asked Questions (FAQ)

Q: Can the IRF640NLPBF replace the IRFSL4020PBF in existing designs?

A: Yes. The IRF640NLPBF maintains identical Vdss (200V), Id (18A), Vgs(th), and Vgs specifications. Both devices operate across -55°C to 175°C and use identical TO-262 package configurations with Through Hole mounting. Pin-for-pin substitution is supported.

Q: What are the differences in on-resistance between these devices?

A: The IRFSL4020PBF specifies 105 mOhm maximum on-resistance at 11A and 10V gate drive, while the IRF640NLPBF specifies 150 mOhm under identical conditions. Higher on-resistance in the IRF640NLPBF results in increased power dissipation during conduction. Circuit thermal analysis is required to confirm acceptability in current-limited applications.

Q: Why does the IRF640NLPBF have higher gate charge?

A: The IRF640NLPBF gate charge is specified as 67 nC at 10V, compared to 29 nC for the IRFSL4020PBF. Higher gate charge increases switching time and gate drive power requirements. Gate driver circuits must be evaluated to confirm compatibility with the increased charge specification.

Q: Are the packages truly identical?

A: Both devices use TO-262-3 Long Leads, I2PAK, or TO-262AA package configurations. Through Hole mounting is identical. Lead spacing and pin assignments are compatible for direct substitution.

Q: What is the significance of the ROHS3 Compliance on the IRF640NLPBF?

A: ROHS3 Compliance indicates the IRF640NLPBF meets Restriction of Hazardous Substances Directive requirements. This certification is relevant for applications subject to environmental regulations in the European Union and other jurisdictions adopting equivalent standards.

Q: Can I use the IRF640NLPBF in applications requiring the lower on-resistance of the IRFSL4020PBF?

A: The higher on-resistance of the IRF640NLPBF (150 mOhm versus 105 mOhm) increases conduction losses. Applications with strict power dissipation budgets or thermal constraints must evaluate whether the 43% increase in on-resistance is acceptable. Thermal modeling of the specific application is required.

Q: Are both devices still available for purchase?

A: Both the IRFSL4020PBF and IRF640NLPBF are classified as Obsolete. Inventory availability varies by distributor. The IRFSL4020PBF shows 15,175 pieces in stock, while the IRF640NLPBF shows 2,200 pieces in stock according to provided data. Availability should be confirmed with authorized distributors before design commitment.

Q: What is the input capacitance difference, and does it matter?

A: The IRFSL4020PBF specifies 1200 pF input capacitance at 50V, while the IRF640NLPBF specifies 1160 pF at 25V. The measurement conditions differ, making direct comparison imprecise. Input capacitance affects gate drive circuit performance and switching speed. Gate driver selection should account for the specified capacitance values.