IRFS540A N-Channel MOSFET 100V 17A TO-220F Equivalent & Substitute Parts

Part Overview

The IRFS540A is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by onsemi, rated for 100V drain-to-source voltage and 17A continuous drain current in a Through Hole TO-220F-3 package. This device is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and production continuity. The IRFS540A serves applications requiring moderate-current switching and linear regulation in power conversion circuits.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	17	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	52	mOhm @ 8.5A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 250µA
Gate Charge (Qg Max) @ Vgs	78	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	1710	pF @ 25V
Power Dissipation (Max)	39	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IRFS540A is determined by electrical and mechanical compatibility within the following criteria:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss) must equal or exceed 100V
Continuous Drain Current (Id) must equal or exceed 17A at 25°C
On-State Resistance (Rds On) must not exceed the maximum specified value to maintain thermal performance
Gate Threshold Voltage (Vgs(th)) must be compatible with existing gate drive circuits
Gate Charge (Qg) and Input Capacitance (Ciss) must be within acceptable ranges for switching frequency and drive circuit design
Maximum Gate Voltage (Vgs Max) must accommodate ±20V gate drive signals
Operating Temperature Range must support the application environment

Mechanical Compatibility Requirements:

Package type must be TO-220-3 Through Hole to maintain PCB layout compatibility
Mounting configuration must support existing thermal management solutions

The FDPF3860T meets these substitution criteria through equivalent voltage rating, superior current rating, improved on-state resistance characteristics, and identical package configuration.

Parameter Comparison

Parameter	IRFS540A	FDPF3860T	Unit
Manufacturer	onsemi	onsemi	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	100	100	V
Continuous Drain Current (Id) @ 25°C	17	20	A (Tc)
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	52 @ 8.5A, 10V	38.2 @ 5.9A, 10V	mOhm
Vgs(th) (Max) @ Id	4 @ 250µA	4.5 @ 250µA	V
Gate Charge (Qg Max) @ Vgs	78 @ 10V	35 @ 10V	nC
Vgs (Max)	±20	±20	V
Input Capacitance (Ciss Max) @ Vds	1710 @ 25V	1800 @ 25V	pF
Power Dissipation (Max)	39	33.8	W (Tc)
Operating Temperature Range	-55 to 175	-55 to 150	°C (TJ)
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-220-3	TO-220-3	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

FDPF3860T as Primary Substitute:

The FDPF3860T is the qualified substitute for the IRFS540A based on the following engineering factors:

Product Status: The FDPF3860T carries Active product status, ensuring continued availability, manufacturing support, and long-term supply chain stability. The IRFS540A is classified as Obsolete, creating supply and support risks.
Electrical Performance: The FDPF3860T provides superior electrical characteristics within the same voltage class. The continuous drain current rating of 20A exceeds the IRFS540A requirement of 17A, providing design margin. The on-state resistance of 38.2 mOhm is lower than the IRFS540A specification of 52 mOhm, resulting in reduced power dissipation and improved thermal performance.
Switching Characteristics: The FDPF3860T demonstrates improved switching efficiency with a gate charge of 35 nC compared to 78 nC in the IRFS540A, reducing gate drive power requirements and enabling higher switching frequencies.
Compliance and Certifications: The FDPF3860T is RoHS3 Compliant and REACH Unaffected, meeting modern regulatory requirements. Both devices share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.
Package Compatibility: Both devices utilize the TO-220-3 Through Hole package, ensuring direct PCB layout compatibility and thermal management solution interchangeability.
Operating Temperature Consideration: The FDPF3860T maximum operating temperature of 150°C is lower than the IRFS540A specification of 175°C. Applications requiring operation above 150°C require thermal design verification to ensure junction temperature remains within the FDPF3860T limit.

Frequently Asked Questions (FAQ)

Q: Can the FDPF3860T directly replace the IRFS540A in existing designs?

A: The FDPF3860T is electrically and mechanically compatible with the IRFS540A for applications operating within the FDPF3860T specifications. The higher current rating and lower on-state resistance of the FDPF3860T provide improved performance. Designs must verify that maximum junction temperature does not exceed 150°C, as the FDPF3860T has a lower maximum operating temperature than the IRFS540A.

Q: What are the key electrical differences between these devices?

A: The FDPF3860T provides 20A continuous drain current versus 17A for the IRFS540A, with lower on-state resistance (38.2 mOhm versus 52 mOhm). Gate charge is significantly reduced in the FDPF3860T (35 nC versus 78 nC), improving switching performance. Both devices maintain identical 100V drain-to-source voltage ratings and ±20V gate voltage specifications.

Q: Are there packaging differences between the IRFS540A and FDPF3860T?

A: Both devices use the TO-220-3 Through Hole package configuration. The FDPF3860T is supplied in Tube packaging, while the IRFS540A packaging format is not specified in available data. This difference does not affect electrical or mechanical compatibility.

Q: What is the significance of the FDPF3860T being Active status versus the IRFS540A being Obsolete?

A: Active product status indicates the FDPF3860T is in current production with ongoing manufacturer support, ensuring long-term availability and consistent quality. Obsolete status for the IRFS540A indicates discontinued production, creating supply uncertainty and potential quality variations in remaining inventory.

Q: How does the gate charge difference affect circuit design?

A: The FDPF3860T gate charge of 35 nC is significantly lower than the IRFS540A specification of 78 nC. Lower gate charge reduces the energy required to switch the device, decreasing gate drive power dissipation and enabling operation at higher switching frequencies without exceeding gate drive circuit current limits.

Q: Are there thermal management considerations when substituting these devices?

A: The FDPF3860T lower on-state resistance (38.2 mOhm versus 52 mOhm) reduces conduction losses, improving thermal performance. However, the FDPF3860T maximum operating temperature of 150°C is lower than the IRFS540A specification of 175°C. Thermal design must ensure junction temperature remains below 150°C under maximum operating conditions.

Q: Do these devices have different regulatory compliance profiles?

A: Both devices are REACH Unaffected and share identical ECCN and HTSUS classifications. The FDPF3860T is RoHS3 Compliant, meeting current regulatory requirements. The IRFS540A compliance status is not specified in available data.

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