IRFS23N20DTRLP N-Channel 200V 24A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS23N20DTRLP is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage and 24A continuous drain current in the D2PAK surface mount package. This device is part of the HEXFET® series and is classified as obsolete. Due to its obsolete status, identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for new production runs and field replacements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	24	A (Tc)
On-Resistance (Rds On) @ Id, Vgs	100 mOhm @ 14A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	5.5	V @ 250µA
Gate Charge (Qg) @ Vgs	86	nC @ 10V
Input Capacitance (Ciss) @ Vds	1960	pF @ 25V
Power Dissipation (Max)	3.8W (Ta), 170W (Tc)	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IRFS23N20DTRLP is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 200V minimum
Continuous Drain Current (Id): 24A or greater
Package Type: D2PAK (TO-263-3) surface mount
FET Type: N-Channel MOSFET
Technology: Metal Oxide Semiconductor

Secondary Compatibility Parameters:

On-Resistance (Rds On): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Operating Temperature Range: Must support -55°C to 175°C or equivalent
RoHS Compliance: ROHS3 Compliant

The substitute parts listed below meet or exceed the critical matching parameters. Variations in secondary parameters reflect design improvements in newer generations while maintaining functional equivalence for the primary application requirements.

Parameter Comparison

Parameter	IRFS23N20DTRLP	IRFS4620TRLPBF	FQB34N20LTM	STB30NF20	STB30NF20L
Manufacturer	Infineon	Infineon	onsemi	STMicroelectronics	STMicroelectronics
Vdss (V)	200	200	200	200	200
Id @ 25°C (A)	24	24	31	30	30
Rds On (mOhm)	100 @ 14A, 10V	77.5 @ 15A, 10V	75 @ 15.5A, 10V	75 @ 15A, 10V	75 @ 15A, 5V
Vgs(th) (V)	5.5 @ 250µA	5 @ 100µA	2 @ 250µA	4 @ 250µA	3 @ 250µA
Qg (nC)	86 @ 10V	38 @ 10V	72 @ 5V	38 @ 10V	65 @ 10V
Ciss (pF)	1960 @ 25V	1710 @ 50V	3900 @ 25V	1597 @ 25V	1990 @ 25V
Power Dissipation (W)	3.8 (Ta), 170 (Tc)	144 (Tc)	3.13 (Ta), 180 (Tc)	125 (Tc)	150 (Tc)
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 150	-55 to 150	-55 to 175
Package	D2PAK	D2PAK	TO-263 (D2PAK)	D2PAK	D2PAK
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFS4620TRLPBF (Infineon Technologies)

The IRFS4620TRLPBF is the manufacturer-recommended substitute from Infineon Technologies. This part maintains the same 200V/24A rating and D2PAK package as the obsolete IRFS23N20DTRLP. The IRFS4620TRLPBF features improved on-resistance (77.5 mOhm versus 100 mOhm) and significantly reduced gate charge (38 nC versus 86 nC), resulting in lower switching losses. Operating temperature range extends to 175°C, matching the original part. Product status is active with full availability. ROHS3 compliance is maintained.

FQB34N20LTM (onsemi)

The FQB34N20LTM is an active substitute from onsemi rated for 200V and 31A continuous drain current, exceeding the 24A requirement. This part is packaged in TO-263 (D2PAK) and offers improved on-resistance (75 mOhm) and thermal performance (180W Tc). Gate charge is 72 nC at 5V. Operating temperature range is -55°C to 150°C, which is 25°C lower than the original part. ROHS3 compliance is maintained. This substitute is suitable for applications where the reduced maximum operating temperature does not conflict with system requirements.

STB30NF20 (STMicroelectronics)

The STB30NF20 is an active substitute from STMicroelectronics rated for 200V and 30A continuous drain current. Packaged in D2PAK, this part offers on-resistance of 75 mOhm and thermal performance of 125W Tc. Gate charge is 38 nC at 10V. Operating temperature range is -55°C to 150°C. ROHS3 compliance is maintained. This substitute provides adequate performance for applications not requiring the full 175°C upper temperature limit.

STB30NF20L (STMicroelectronics)

The STB30NF20L is an active substitute from STMicroelectronics rated for 200V and 30A continuous drain current. Packaged in D2PAK, this part offers on-resistance of 75 mOhm and thermal performance of 150W Tc. Gate charge is 65 nC at 10V. Operating temperature range extends to 175°C, matching the original part. This device carries automotive qualification (AEC-Q101) and is designated as automotive grade. ROHS3 compliance is maintained. This substitute is recommended for applications requiring extended temperature range and automotive-grade reliability.

Frequently Asked Questions (FAQ)

Q: Can the IRFS23N20DTRLP be directly replaced with any of these substitute parts?

A: Direct replacement is possible only if the application circuit and thermal management design accommodate the substitute part's electrical characteristics. All listed substitutes maintain the 200V/24A core ratings and D2PAK package. However, differences in on-resistance, gate charge, and thermal performance must be evaluated against the specific application requirements.

Q: What is the primary reason for substitution?

A: The IRFS23N20DTRLP is classified as obsolete. Substitute parts are active products with confirmed long-term availability from their respective manufacturers.

Q: Are all substitute parts pin-compatible with the IRFS23N20DTRLP?

A: Yes. All substitute parts use the D2PAK (TO-263-3) package with identical pin configuration: Gate, Drain, and Source connections are functionally equivalent.

Q: Which substitute offers the best performance improvement?

A: The IRFS4620TRLPBF provides the most significant performance improvement, with 23% reduction in on-resistance (77.5 mOhm versus 100 mOhm) and 56% reduction in gate charge (38 nC versus 86 nC), resulting in lower conduction and switching losses.

Q: Does operating temperature range affect substitution suitability?

A: Yes. The IRFS23N20DTRLP operates to 175°C. The IRFS4620TRLPBF and STB30NF20L maintain this range. The FQB34N20LTM and STB30NF20 operate to 150°C maximum. Applications requiring sustained operation above 150°C must use IRFS4620TRLPBF or STB30NF20L.

Q: What is the significance of the STB30NF20L automotive qualification?

A: The STB30NF20L carries AEC-Q101 automotive qualification, indicating compliance with automotive reliability and quality standards. This qualification is relevant only for applications requiring automotive-grade components.

Q: How do gate charge differences impact circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. Lower gate charge reduces switching losses and allows faster switching speeds with lower gate drive current requirements. The IRFS4620TRLPBF (38 nC) and STB30NF20 (38 nC) require significantly less gate drive energy than the original IRFS23N20DTRLP (86 nC).

Q: Are all substitute parts RoHS compliant?

A: Yes. All listed substitute parts are ROHS3 compliant, matching the compliance status of the original IRFS23N20DTRLP.

Q: What packaging options are available for these substitutes?

A: All substitute parts are supplied in D2PAK (TO-263-3) surface mount package. The IRFS4620TRLPBF is supplied in Tape & Reel (TR) packaging. The FQB34N20LTM is supplied in Tape & Reel (TR) packaging. The STB30NF20 and STB30NF20L are supplied in Cut Tape (CT) & Digi-Reel® packaging.

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