IRFPG40 N-Channel 1000V 4.3A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFPG40 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 1000V drain-to-source voltage with a continuous drain current of 4.3A at 25°C. This device is packaged in a TO-247-3 through-hole configuration and is rated for 150W power dissipation. The IRFPG40 is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, gate charge characteristics, and thermal performance while meeting modern compliance standards.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	4.3	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	3.5	Ohm @ 2.6A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	120	nC @ 10V
Power Dissipation (Max)	150	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	Through Hole

Substitute Part Grouping Explanation

Substitution of the IRFPG40 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal 1000V
Package Type: Must be TO-247-3 or compatible through-hole TO-247 variant
Operating Temperature Range: Must span -55°C to 150°C minimum
Mounting Type: Through Hole configuration required

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Minimum 3A at 25°C (allows equal or higher ratings)
Gate Charge (Qg): Maximum 120nC at 10V (lower values acceptable)
Rds On (Max): Maximum 3.5 Ohm at specified conditions (lower values acceptable)
Power Dissipation: Minimum 125W (equal or higher acceptable)
Gate Threshold Voltage (Vgs(th)): Range 4V to 5V at specified test conditions

Substitute parts are grouped into two categories: Parametric Equivalents (identical electrical specifications) and Manufacturer Recommended Alternatives (functionally compatible with minor parameter variations within acceptable engineering tolerances).

Parameter Comparison

Parameter	IRFPG40	IRFPG40PBF	IXFH4N100Q	IXFH6N100Q	IXTH3N100P	STW5NK100Z
Manufacturer	Vishay Siliconix	Vishay Siliconix	IXYS	IXYS	IXYS	STMicroelectronics
Vdss (V)	1000	1000	1000	1000	1000	1000
Id @ 25°C (A)	4.3	4.3	4	6	3	3.5
Rds On (Max) @ 10V (Ohm)	3.5 @ 2.6A	3.5 @ 2.6A	3 @ 2A	1.9 @ 3A	4.8 @ 1.5A	3.7 @ 1.75A
Vgs(th) (V)	4 @ 250µA	4 @ 250µA	5 @ 1.5mA	4.5 @ 2.5mA	4.5 @ 250µA	4.5 @ 100µA
Gate Charge Qg (nC)	120 @ 10V	120 @ 10V	39 @ 10V	48 @ 10V	39 @ 10V	59 @ 10V
Power Dissipation (W)	150	150	150	180	125	125
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: IRFPG40PBF

The IRFPG40PBF is the direct parametric equivalent of the IRFPG40, offering identical electrical specifications including 1000V Vdss, 4.3A continuous drain current, 3.5 Ohm Rds On, and 120nC gate charge. This part maintains the same TO-247-3 package configuration and 150W power dissipation rating. The IRFPG40PBF is currently in active production status with 5539 units in stock and carries ROHS3 compliance certification, addressing the regulatory limitations of the obsolete IRFPG40. This substitution requires no circuit redesign or thermal management modifications.

Secondary Recommendation: STW5NK100Z

The STW5NK100Z from STMicroelectronics provides functional compatibility with slightly reduced continuous drain current (3.5A versus 4.3A) and marginally higher Rds On (3.7 Ohm versus 3.5 Ohm). This device maintains the 1000V voltage rating, TO-247-3 package, and -55°C to 150°C operating range. The STW5NK100Z features lower gate charge (59nC versus 120nC), which may improve switching performance in certain applications. ROHS3 compliance and active production status support long-term availability.

Alternative Recommendation: IXFH4N100Q

The IXFH4N100Q from IXYS offers 1000V Vdss with 4A continuous drain current and superior Rds On performance (3 Ohm versus 3.5 Ohm). This device features significantly reduced gate charge (39nC versus 120nC), enabling faster switching transitions. The TO-247-3 package and 150W power dissipation maintain mechanical and thermal compatibility. ROHS3 compliance and active production status ensure regulatory compliance and supply continuity.

Higher Current Alternative: IXFH6N100Q

The IXFH6N100Q provides increased current handling capability (6A versus 4.3A) and improved Rds On (1.9 Ohm versus 3.5 Ohm) with enhanced power dissipation (180W versus 150W). This device is suitable for applications requiring higher current capacity or lower on-state losses. The 1000V voltage rating and TO-247-3 package maintain compatibility. ROHS3 compliance and substantial inventory (14088 units) support production requirements.

Lower Current Alternative: IXTH3N100P

The IXTH3N100P provides reduced current rating (3A versus 4.3A) with higher Rds On (4.8 Ohm versus 3.5 Ohm) and lower power dissipation (125W versus 150W). This device is applicable in current-limited applications or where thermal constraints are less demanding. The 1000V voltage rating and TO-247-3 package maintain electrical and mechanical compatibility. ROHS3 compliance and active production status ensure regulatory alignment.

Frequently Asked Questions (FAQ)

Q: Can the IRFPG40PBF be used as a direct replacement for the IRFPG40?

A: Yes. The IRFPG40PBF is a parametric equivalent with identical electrical specifications (1000V Vdss, 4.3A Id, 3.5 Ohm Rds On, 120nC Qg) and the same TO-247-3 package. The primary difference is product status (Active versus Obsolete) and RoHS compliance (ROHS3 versus non-compliant). No circuit modifications are required.

Q: What is the difference between TO-247-3 and TO-247-AD packaging?

A: Both are through-hole TO-247 variants with three leads (Gate, Drain, Source). The TO-247-3 designation refers to the standard TO-247 package, while TO-247-AD (used by IXYS devices) is a variant of the same package family. Mechanical compatibility is maintained across these variants for PCB mounting and thermal management applications.

Q: Which substitute part has the lowest gate charge?

A: The IXFH4N100Q and IXTH3N100P both feature 39nC gate charge at 10V, compared to 120nC for the IRFPG40. Lower gate charge reduces switching losses and enables faster switching transitions, beneficial in high-frequency applications.

Q: Can I use the IXFH6N100Q if my circuit only requires 4.3A?

A: Yes. The IXFH6N100Q is rated for 6A continuous drain current, which exceeds the 4.3A requirement of the IRFPG40. The device will operate safely at lower current levels. The improved Rds On (1.9 Ohm versus 3.5 Ohm) and higher power dissipation rating (180W versus 150W) provide additional design margin.

Q: Are all substitute parts RoHS compliant?

A: All substitute parts listed (IRFPG40PBF, IXFH4N100Q, IXFH6N100Q, IXTH3N100P, STW5NK100Z) carry ROHS3 compliance certification. The original IRFPG40 is RoHS non-compliant, making substitution necessary for applications subject to RoHS regulatory requirements.

Q: What is the impact of different Rds On values on circuit performance?

A: Rds On (on-state resistance) directly affects conduction losses and heat generation. Lower Rds On values reduce power dissipation during the on-state. The IXFH6N100Q (1.9 Ohm) dissipates less heat than the IRFPG40 (3.5 Ohm) at equivalent current levels. Selection depends on thermal budget and efficiency requirements.

Q: Can I substitute a lower-current device like the IXTH3N100P in a 4.3A application?

A: The IXTH3N100P is rated for 3A continuous drain current, which is below the 4.3A requirement. This substitution is not suitable for applications requiring sustained 4.3A operation, as it would exceed the device's continuous current rating and risk thermal failure.

Q: What is the significance of gate threshold voltage (Vgs(th)) differences?

A: Gate threshold voltage determines the gate-source voltage required to turn the device on. The IRFPG40 specifies 4V at 250µA, while substitutes range from 4V to 5V at varying test currents. These differences are within normal operating margins and do not prevent substitution in standard switching applications.

Q: Are there inventory considerations for selecting a substitute part?

A: Yes. Inventory levels vary significantly: IXFH6N100Q (14088 units), IRFPG40PBF (5539 units), IXTH3N100P (5480 units), STW5NK100Z (1230 units), and IXFH4N100Q (964 units). Higher inventory levels support sustained production requirements and reduce supply chain risk.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message