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IRFP250 N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The IRFP250 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 200V drain-to-source voltage with 30A continuous drain current at 25°C. Manufactured by IXYS, this device is housed in a TO-247AD through-hole package and is designed for high-power switching applications requiring robust thermal performance at 190W maximum power dissipation.
The IRFP250 is classified as obsolete. Equivalent and substitute parts are available from active product lines, offering improved performance characteristics and enhanced availability while maintaining electrical and mechanical compatibility with the original design.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 200 | V |
| Continuous Drain Current (Id) @ 25°C | 30 | A (Tc) |
| Drive Voltage (Max Rds On) | 10 | V |
| Rds On (Max) @ 18A, 10V | 85 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 | V |
| Gate Charge (Qg) @ 10V | 140 | nC |
| Maximum Gate Voltage (Vgs) | ±20 | V |
| Input Capacitance (Ciss) @ 25V | 2970 | pF |
| Power Dissipation (Max) | 190 | W (Tc) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package Type | TO-247-3 | Through Hole |
| Moisture Sensitivity Level | 1 | Unlimited |
Substitute Part Grouping Explanation
Substitution of the IRFP250 is determined by strict equivalence across the following electrical and mechanical parameters:
Critical Matching Parameters:
- Drain-to-Source Voltage (Vdss): 200V
- Continuous Drain Current (Id) @ 25°C: 30A (Tc)
- Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
- Maximum Gate Voltage (Vgs): ±20V
- Package Type: TO-247-3 (through-hole mounting)
- Moisture Sensitivity Level: 1 (Unlimited)
Allowable Variations: Substitute parts may exhibit improved performance in the following parameters without affecting functional compatibility:
- Rds On (Max): Lower values indicate improved efficiency
- Gate Charge (Qg): Lower values indicate faster switching
- Input Capacitance (Ciss): Lower values indicate reduced drive requirements
- Power Dissipation (Max): Higher values indicate enhanced thermal capability
- Operating Temperature Range: Extended upper temperature limits
All substitute parts listed maintain identical voltage and current ratings, gate control characteristics, and package footprint compatibility with the original IRFP250.
Parameter Comparison
| Parameter | IRFP250 (IXYS) | IRFP250MPBF (Infineon) | IRFP250NPBF (Infineon) | IRFP250PBF (Vishay) |
|---|---|---|---|---|
| Manufacturer | IXYS | Infineon Technologies | Infineon Technologies | Vishay Siliconix |
| Drain-to-Source Voltage (Vdss) | 200 V | 200 V | 200 V | 200 V |
| Continuous Drain Current (Id) @ 25°C | 30 A (Tc) | 30 A (Tc) | 30 A (Tc) | 30 A (Tc) |
| Drive Voltage (Max Rds On) | 10 V | 10 V | 10 V | 10 V |
| Rds On (Max) @ 18A, 10V | 85 mOhm | 75 mOhm | 75 mOhm | 85 mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 V | 4 V | 4 V | 4 V |
| Gate Charge (Qg) @ 10V | 140 nC | 123 nC | 123 nC | 140 nC |
| Maximum Gate Voltage (Vgs) | ±20 V | ±20 V | ±20 V | ±20 V |
| Input Capacitance (Ciss) @ 25V | 2970 pF | 2159 pF | 2159 pF | 2800 pF |
| Power Dissipation (Max) | 190 W (Tc) | 214 W (Tc) | 214 W (Tc) | 190 W (Tc) |
| Operating Temperature Range | -55 to 150 °C (TJ) | -55 to 175 °C (TJ) | -55 to 175 °C (TJ) | -55 to 150 °C (TJ) |
| Package Type | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Product Status | Obsolete | Active | Active | Active |
| RoHS Status | Not specified | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Affected |
| Moisture Sensitivity Level | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
IRFP250MPBF (Infineon Technologies)
This substitute offers improved electrical performance with reduced on-state resistance (75 mOhm vs. 85 mOhm) and lower gate charge (123 nC vs. 140 nC), resulting in enhanced efficiency and faster switching characteristics. Extended operating temperature range to 175°C provides additional thermal margin. ROHS3 compliance and active product status ensure long-term availability and regulatory alignment. Suitable for applications requiring optimized thermal performance and modern compliance standards.
IRFP250NPBF (Infineon Technologies)
Electrically and mechanically identical to IRFP250MPBF, this variant offers the same performance improvements and compliance certifications. Active product status and high inventory availability support production continuity. Selection between IRFP250MPBF and IRFP250NPBF is determined by packaging and supply chain requirements.
IRFP250PBF (Vishay Siliconix)
This substitute maintains electrical characteristics identical to the original IRFP250, including on-state resistance (85 mOhm) and gate charge (140 nC). ROHS3 compliance and active product status provide regulatory alignment and supply continuity. Operating temperature range matches the original specification at -55°C to 150°C. REACH Affected status requires verification for applications subject to REACH regulations. Suitable for direct replacement in existing designs without performance modification.
Frequently Asked Questions (FAQ)
Q: Can IRFP250MPBF and IRFP250NPBF be used interchangeably with the original IRFP250?
A: Yes. Both Infineon variants maintain identical voltage ratings (200V Vdss), current ratings (30A continuous drain current), and gate control characteristics (4V threshold, ±20V maximum gate voltage). The TO-247-3 package footprint is identical, enabling direct mechanical and electrical substitution. Improved performance characteristics (lower Rds On and gate charge) are compatible with existing circuit designs.
Q: What is the difference between IRFP250MPBF and IRFP250NPBF?
A: Both parts are manufactured by Infineon Technologies and are electrically and mechanically identical. They share identical electrical specifications, compliance certifications, and performance characteristics. Selection between these variants is determined by packaging format and supplier availability.
Q: How does IRFP250PBF compare to the Infineon substitutes?
A: IRFP250PBF (Vishay Siliconix) maintains the original IRFP250 electrical specifications, including on-state resistance (85 mOhm) and gate charge (140 nC). The Infineon variants (IRFP250MPBF and IRFP250NPBF) offer improved efficiency with lower on-state resistance (75 mOhm) and reduced gate charge (123 nC). All three are mechanically compatible with identical TO-247-3 package footprints.
Q: Are there compliance differences between substitute options?
A: IRFP250MPBF and IRFP250NPBF are ROHS3 compliant with REACH Unaffected status. IRFP250PBF is ROHS3 compliant but carries REACH Affected status. Applications subject to REACH regulations should verify compliance requirements with the specific substitute selection.
Q: What is the operating temperature advantage of Infineon substitutes?
A: IRFP250MPBF and IRFP250NPBF support operating temperatures to 175°C (junction temperature), compared to 150°C for the original IRFP250 and IRFP250PBF. This extended range provides additional thermal margin in high-temperature applications.
Q: Can these substitutes be used in existing PCB designs without modification?
A: Yes. All substitute parts use the TO-247-3 through-hole package with identical pin configuration and mechanical footprint. Direct substitution is possible without PCB redesign or layout modification.
Q: What inventory status should influence substitute selection?
A: IRFP250MPBF and IRFP250NPBF offer significantly higher inventory availability (59,400 and 50,550 units respectively) compared to IRFP250PBF (1,454 units). For applications requiring immediate supply or long-term production continuity, Infineon variants provide superior availability assurance.
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