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IRFP044PBF N-Channel MOSFET 60V 57A Equivalent & Substitute Parts
Part Overview
The IRFP044PBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage with 57A continuous drain current at 25°C. This device is packaged in a TO-247AC through-hole configuration and is designed for high-current switching applications requiring robust thermal performance at 180W maximum power dissipation.
The IRFP044PBF carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 60 | V |
| Continuous Drain Current (Id) @ 25°C | 57 | A (Tc) |
| On-Resistance (Rds On Max) @ 34A, 10V | 28 | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ 250µA | 4 | V |
| Gate Charge (Qg Max) @ 10V | 95 | nC |
| Power Dissipation (Max) | 180 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | TO-247-3 | Through Hole |
| FET Technology | MOSFET (Metal Oxide) | N-Channel |
Substitute Part Grouping Explanation
Substitution of the IRFP044PBF is determined by strict electrical and mechanical parameter matching within the N-Channel MOSFET category. The following parameters establish substitution eligibility:
Critical Matching Parameters:
- Drain-to-Source Voltage (Vdss): 60V minimum
- Continuous Drain Current (Id) @ 25°C: 57A minimum
- Gate Threshold Voltage (Vgs(th)): 4V maximum @ 250µA
- Maximum Gate Voltage (Vgs): ±20V
- Operating Temperature Range: -55°C to 175°C minimum
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Mounting Type: Through Hole
Secondary Compatibility Parameters:
- On-Resistance (Rds On): Lower or equal values indicate improved performance
- Gate Charge (Qg): Lower values indicate faster switching characteristics
- Power Dissipation: Equal or greater thermal capability
- Package Type: TO-247 or TO-220 configurations acceptable for through-hole mounting
The IRFZ44VZPBF qualifies as a manufacturer-recommended substitute based on matching all critical electrical parameters while offering improved on-resistance characteristics (12mOhm vs. 28mOhm) and reduced gate charge (65nC vs. 95nC). Package transition from TO-247AC to TO-220AB requires mechanical layout verification but maintains electrical compatibility.
Parameter Comparison
| Parameter | IRFP044PBF (Main) | IRFZ44VZPBF (Substitute) | Unit |
|---|---|---|---|
| Manufacturer | Vishay Siliconix | Infineon Technologies | — |
| Drain-to-Source Voltage (Vdss) | 60 | 60 | V |
| Continuous Drain Current (Id) @ 25°C | 57 | 57 | A (Tc) |
| On-Resistance (Rds On Max) @ 34A, 10V | 28 | 12 | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ 250µA | 4 | 4 | V |
| Gate Charge (Qg Max) @ 10V | 95 | 65 | nC |
| Maximum Gate Voltage (Vgs) | ±20 | ±20 | V |
| Input Capacitance (Ciss Max) @ 25V | 2500 | 1690 | pF |
| Power Dissipation (Max) | 180 | 92 | W (Tc) |
| Operating Temperature Range | -55 to 175 | -55 to 175 | °C (TJ) |
| Package Type | TO-247-3 | TO-220-3 | Through Hole |
| Product Status | Obsolete | Not For New Designs | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | — |
| REACH Status | REACH Unaffected | REACH Unaffected | — |
Engineering Selection Recommendations
IRFZ44VZPBF Substitution Basis:
The IRFZ44VZPBF is designated as the manufacturer-recommended substitute for the IRFP044PBF. Both devices maintain identical electrical specifications for voltage rating (60V Vdss) and current capacity (57A Id @ 25°C), ensuring functional equivalence in circuit operation.
The IRFZ44VZPBF demonstrates superior electrical characteristics with reduced on-resistance (12mOhm vs. 28mOhm) and lower gate charge (65nC vs. 95nC), resulting in improved switching efficiency and reduced power dissipation during operation. The lower input capacitance (1690pF vs. 2500pF) provides faster gate response characteristics.
Both devices maintain identical operating temperature range (-55°C to 175°C), gate threshold voltage (4V @ 250µA), and maximum gate voltage (±20V), confirming direct electrical compatibility.
Compliance Considerations:
Both the IRFP044PBF and IRFZ44VZPBF are ROHS3 compliant, REACH unaffected, and carry MSL Level 1 (Unlimited) moisture sensitivity ratings. These certifications ensure regulatory compliance for applications subject to environmental and hazardous substance restrictions.
Package Transition:
The primary design consideration involves the package transition from TO-247AC (main part) to TO-220AB (substitute). Both are through-hole configurations with different mechanical footprints and thermal characteristics. The TO-247AC package provides superior thermal performance (180W vs. 92W maximum power dissipation), while the TO-220AB package offers reduced board space requirements. Circuit board layout and thermal management design must be evaluated for the specific application before implementation.
Frequently Asked Questions (FAQ)
Q: Can the IRFZ44VZPBF directly replace the IRFP044PBF in existing circuit designs?
A: Electrical substitution is valid based on matching Vdss (60V), Id (57A), Vgs(th) (4V), and operating temperature range (-55°C to 175°C). However, mechanical substitution requires board layout modification due to package differences (TO-247AC vs. TO-220AB). Thermal design review is necessary because the TO-220AB package has lower maximum power dissipation (92W vs. 180W).
Q: What are the key electrical parameters that determine substitution compatibility?
A: Substitution compatibility is established through matching: Drain-to-Source Voltage (Vdss) at 60V minimum, Continuous Drain Current (Id) at 57A minimum @ 25°C, Gate Threshold Voltage (Vgs(th)) at 4V maximum @ 250µA, Maximum Gate Voltage (Vgs) at ±20V, and Operating Temperature Range from -55°C to 175°C. All parameters must meet or exceed the original specification.
Q: How do the on-resistance and gate charge differences affect circuit performance?
A: The IRFZ44VZPBF exhibits lower on-resistance (12mOhm vs. 28mOhm) and reduced gate charge (65nC vs. 95nC). Lower on-resistance decreases conduction losses and heat generation during operation. Reduced gate charge enables faster switching transitions and lower gate drive power requirements. These improvements result in enhanced overall circuit efficiency.
Q: Are there thermal management implications when switching from TO-247AC to TO-220AB packaging?
A: Yes. The TO-247AC package supports 180W maximum power dissipation, while the TO-220AB package supports 92W maximum power dissipation. Applications operating near the thermal limits of the original design must evaluate whether the reduced thermal capability of the TO-220AB package remains acceptable. Thermal modeling and testing are required for high-power applications.
Q: What is the significance of the product status designations?
A: The IRFP044PBF is marked Obsolete, indicating discontinued production and limited availability. The IRFZ44VZPBF is marked Not For New Designs, indicating it remains available but is not recommended for new product development. Both statuses indicate the need for alternative solutions in long-term applications, though the IRFZ44VZPBF provides immediate substitution capability.
Q: Do both devices meet the same regulatory compliance standards?
A: Yes. Both the IRFP044PBF and IRFZ44VZPBF are ROHS3 compliant, REACH unaffected, and carry identical Moisture Sensitivity Level 1 (Unlimited) ratings. Regulatory compliance is maintained across the substitution.
Q: What packaging format is the IRFZ44VZPBF supplied in?
A: The IRFZ44VZPBF is supplied in Tube packaging, whereas the IRFP044PBF packaging format is not specified in the provided data. Verify packaging requirements for your procurement and assembly processes.
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