IRFL014 N-Channel MOSFET 60V 2.7A SOT-223 Equivalent & Substitute Parts

Part Overview

The IRFL014 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage with 2.7A continuous drain current in a surface mount SOT-223 package. This device is classified as obsolete product status. Identification of equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for new production runs, repairs, and design updates where the original part is no longer readily available from the original manufacturer.

Substiute Parts

IRFL014
Vishay SiliconixIn Stock: 21405IRFL014 Datasheet
IRFL014
Current Part
IRFL014NTRPBF
Infineon TechnologiesIn Stock: 35161IRFL014NTRPBF Datasheet
IRFL014NTRPBF
MFR Recommended
NDT014
onsemiIn Stock: 40821NDT014 Datasheet
NDT014
MFR Recommended
NDT014L
onsemiIn Stock: 40955NDT014L Datasheet
NDT014L
MFR Recommended
NDT3055L
onsemiIn Stock: 23138NDT3055L Datasheet
NDT3055L
MFR Recommended
STN3NF06L
STMicroelectronicsIn Stock: 72493STN3NF06L Datasheet
STN3NF06L
MFR Recommended
ZXMN6A11GTA
Diodes IncorporatedIn Stock: 6147ZXMN6A11GTA Datasheet
ZXMN6A11GTA
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 2.7 A
On-State Drain Resistance (Rds On) @ 1.6A, 10V 200 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 11 nC
Input Capacitance (Ciss) @ 25V 300 pF
Power Dissipation (Max) 2 (Ta), 3.1 (Tc) W
Operating Temperature Range -55 to 150 °C
Package Type SOT-223
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitute parts for the IRFL014 are selected based on electrical and mechanical compatibility within the following criteria:

Primary Substitution Parameters:

  • Drain to Source Voltage (Vdss): Equal to or greater than 60V
  • Continuous Drain Current (Id): Equal to or greater than 2.7A
  • On-State Drain Resistance (Rds On): Equal to or lower than 200mOhm at specified gate voltage
  • Gate Threshold Voltage (Vgs(th)): Within ±20V maximum gate voltage specification
  • Package Type: SOT-223 or SOT-223-4 surface mount configuration
  • Operating Temperature Range: Minimum -55°C to maximum 150°C

Substitution Logic: Parts are grouped into three categories based on electrical performance alignment:

  1. Direct Equivalents — Parts matching or exceeding all primary electrical parameters with identical or superior power dissipation ratings and active product status.

  2. Enhanced Performance Substitutes — Parts exceeding the original specifications in drain current capacity and/or on-state resistance while maintaining voltage and temperature ratings.

  3. Compliant Alternatives — Parts meeting minimum electrical requirements with active product status and RoHS3 compliance certification.

All substitute parts listed maintain SOT-223 package compatibility and surface mount mounting type. Compliance certifications (RoHS3, REACH Unaffected) are provided for each substitute to support regulatory requirements.

Parameter Comparison

Parameter IRFL014 (Vishay) IRFL014NTRPBF (Infineon) NDT014 (onsemi) NDT014L (onsemi) NDT3055L (onsemi) STN3NF06L (STMicroelectronics) ZXMN6A11GTA (Diodes)
Vdss (V) 60 55 60 60 60 60 60
Id @ 25°C (A) 2.7 1.9 2.7 2.8 4 4 3.1
Rds On (mOhm) 200 @ 1.6A, 10V 160 @ 1.9A, 10V 200 @ 1.6A, 10V 160 @ 3.4A, 10V 100 @ 4A, 10V 100 @ 1.5A, 10V 120 @ 2.5A, 10V
Vgs(th) (V) 4 @ 250µA 4 @ 250µA 4 @ 250µA 3 @ 250µA 2 @ 250µA 2.8 @ 250µA 3 @ 250µA
Qg (nC) 11 @ 10V 11 @ 10V 11 @ 10V 5 @ 4.5V 20 @ 10V 9 @ 5V 5.7 @ 10V
Ciss (pF) 300 @ 25V 190 @ 25V 155 @ 25V 214 @ 30V 345 @ 25V 340 @ 25V 330 @ 40V
Power Dissipation (W) 2 (Ta), 3.1 (Tc) 1 (Ta) 3 (Ta) 3 (Ta) 3 (Ta) 3.3 (Tc) 2 (Ta)
Operating Temp (°C) -55 to 150 -55 to 150 -65 to 150 -65 to 150 -65 to 150 -55 to 150 -55 to 150
Package SOT-223 SOT-223 SOT-223-4 SOT-223-4 SOT-223-4 SOT-223 SOT-223-3
Product Status Obsolete Active Active Active Active Active Active
RoHS Status Non-compliant RoHS3 Compliant RoHS3 Compliant RoHS3 Compliant RoHS3 Compliant RoHS3 Compliant RoHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: NDT014 (onsemi)

The NDT014 provides direct electrical equivalence to the IRFL014 with identical Vdss (60V), Id (2.7A), and Rds On (200mOhm @ 1.6A, 10V) specifications. This part maintains full compatibility with existing circuit designs. The NDT014 carries active product status with RoHS3 compliance certification, ensuring long-term availability and regulatory alignment. Extended operating temperature range (-65°C to 150°C) provides additional thermal margin compared to the original part.

Secondary Recommendation: NDT014L (onsemi)

The NDT014L offers enhanced performance with marginally higher drain current (2.8A) and improved on-state resistance (160mOhm @ 3.4A, 10V). Lower gate threshold voltage (3V) and reduced gate charge (5nC @ 4.5V) enable faster switching characteristics. Active product status and RoHS3 compliance support production continuity. This part is suitable for applications requiring improved efficiency or faster switching performance.

Tertiary Recommendation: STN3NF06L (STMicroelectronics)

The STN3NF06L provides enhanced drain current capacity (4A) with superior on-state resistance (100mOhm @ 1.5A, 10V), delivering lower power dissipation in high-current applications. STripFET™ II series designation indicates advanced process technology. Active product status and RoHS3 compliance certification ensure regulatory compliance. This part is appropriate for designs requiring higher current handling or reduced thermal dissipation.

Alternative Recommendation: ZXMN6A11GTA (Diodes Incorporated)

The ZXMN6A11GTA maintains 60V Vdss rating with 3.1A drain current and 120mOhm on-state resistance. Reduced gate charge (5.7nC) supports efficient switching applications. Active product status and RoHS3 compliance provide regulatory support. Lower inventory levels (6047 pcs) compared to other substitutes may affect lead time considerations.

Not Recommended: IRFL014NTRPBF (Infineon)

The IRFL014NTRPBF exhibits reduced drain-to-source voltage (55V) and continuous drain current (1.9A), falling below the original IRFL014 specifications. This part is unsuitable for direct substitution in applications requiring full 60V and 2.7A ratings.

Frequently Asked Questions (FAQ)

Q: Can the NDT014 directly replace the IRFL014 in existing designs?

A: Yes. The NDT014 maintains identical electrical specifications for Vdss (60V), Id (2.7A), and Rds On (200mOhm @ 1.6A, 10V). Both parts use SOT-223 surface mount packaging with compatible pinout. No circuit modifications are required.

Q: What is the difference between SOT-223 and SOT-223-4 packages?

A: SOT-223 is a 3-pin package (Gate, Drain, Source), while SOT-223-4 includes an additional pin for enhanced thermal management or substrate connection. Both packages are mechanically compatible with standard SOT-223 footprints, though SOT-223-4 parts may provide improved thermal performance in high-power applications.

Q: Why is the IRFL014 listed as obsolete?

A: Obsolete status indicates the manufacturer (Vishay Siliconix) has discontinued production. Active substitute parts from onsemi, STMicroelectronics, and Diodes Incorporated provide equivalent or enhanced functionality with ongoing manufacturing support.

Q: Does RoHS3 compliance affect electrical performance?

A: No. RoHS3 compliance addresses material composition and environmental restrictions, not electrical characteristics. All RoHS3-compliant substitutes maintain the same electrical performance as the original part.

Q: Which substitute offers the best thermal performance?

A: The STN3NF06L and NDT3055L provide the lowest on-state resistance (100mOhm), resulting in reduced power dissipation and improved thermal performance in high-current applications. The STN3NF06L is recommended for thermal-sensitive designs.

Q: Can I use a substitute with higher drain current rating in a design rated for 2.7A?

A: Yes. Parts with higher current ratings (NDT3055L at 4A, STN3NF06L at 4A) are fully compatible with designs specified for 2.7A operation. The higher rating provides design margin and does not affect circuit functionality.

Q: What is gate charge and why does it matter?

A: Gate charge (Qg) represents the total charge required to switch the transistor on or off. Lower gate charge (NDT014L at 5nC, ZXMN6A11GTA at 5.7nC) enables faster switching and reduced driver power consumption compared to higher values (IRFL014 at 11nC).

Q: Are all substitute parts available in the same packaging options?

A: All substitute parts are available in surface mount SOT-223 or SOT-223-4 configurations. Specific packaging options (Cut Tape, Tape & Reel) vary by manufacturer and distributor. Verify packaging availability with your component supplier.

Q: What is the significance of Rds On specification?

A: On-state drain resistance (Rds On) determines power dissipation during transistor conduction. Lower Rds On values reduce heat generation and improve efficiency. The IRFL014 specifies 200mOhm; substitutes range from 100mOhm to 200mOhm depending on the part selected.

Q: Can I substitute parts with different gate threshold voltages?

A: Yes, provided the gate drive voltage in your circuit exceeds the substitute part's Vgs(th) specification. The IRFL014 specifies 4V; substitutes range from 2V to 4V. Lower threshold voltages enable operation with lower gate drive voltages, while higher values require proportionally higher drive signals.

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