IRFD9110 P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFD9110 is a P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 100V drain-to-source voltage with 700mA continuous drain current capability. This device is packaged in a 4-HVMDIP through-hole configuration and is designed for general-purpose switching and amplification applications requiring P-channel operation.

The IRFD9110 carries an obsolete product status, making identification of functionally equivalent alternatives necessary for ongoing design support, maintenance, and new production requirements. Direct substitutes with identical electrical and mechanical specifications are available from the same manufacturer.

Substiute Parts

IRFD9110
Vishay SiliconixIn Stock: 3553IRFD9110 Datasheet
IRFD9110
Current Part
IRFD9110PBF
Vishay SiliconixIn Stock: 5652IRFD9110PBF Datasheet
IRFD9110PBF
Direct

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 700 mA
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 1.2 Ω @ 420mA, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 4 V @ 250µA
Gate Charge (Qg) @ Vgs 8.7 nC @ 10V
Maximum Gate Voltage (Vgs) ±20 V
Input Capacitance (Ciss) @ Vds 200 pF @ 25V
Power Dissipation (Max) 1.3 W
Operating Temperature Range -55 to 175 °C (TJ)
Mounting Type Through Hole
Package / Case 4-DIP (0.300", 7.62mm)

Substitute Part Grouping Explanation

Substitution of the IRFD9110 is determined by strict equivalence across all critical electrical and mechanical parameters. The substitute part must satisfy the following criteria:

Electrical Equivalence Requirements:

  • FET Type: P-Channel topology
  • Drain to Source Voltage (Vdss): 100V minimum rating
  • Continuous Drain Current (Id): 700mA minimum at 25°C
  • On-State Resistance (Rds On): 1.2Ω maximum at specified conditions
  • Gate Threshold Voltage (Vgs(th)): 4V maximum at 250µA
  • Gate Charge (Qg): 8.7nC maximum at 10V
  • Maximum Gate Voltage (Vgs): ±20V minimum rating
  • Input Capacitance (Ciss): 200pF maximum at 25V
  • Power Dissipation: 1.3W maximum
  • Operating Temperature Range: -55°C to 175°C minimum

Mechanical Equivalence Requirements:

  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: 4-HVMDIP

Substitutes are identified based on identical parameter specifications across all listed electrical and mechanical characteristics. No parameter relaxation or derating is applied in this substitution classification.

Parameter Comparison

Parameter IRFD9110 IRFD9110PBF Unit
Manufacturer Vishay Siliconix Vishay Siliconix
Product Status Obsolete Active
FET Type P-Channel P-Channel
Drain to Source Voltage (Vdss) 100 100 V
Continuous Drain Current (Id) @ 25°C 700 700 mA
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ Id, Vgs 1.2 1.2 Ω @ 420mA, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 4 4 V @ 250µA
Gate Charge (Qg) @ Vgs 8.7 8.7 nC @ 10V
Maximum Gate Voltage (Vgs) ±20 ±20 V
Input Capacitance (Ciss) @ Vds 200 200 pF @ 25V
Power Dissipation (Max) 1.3 1.3 W
Operating Temperature Range -55 to 175 -55 to 175 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case 4-DIP (0.300", 7.62mm) 4-DIP (0.300", 7.62mm)
Supplier Device Package 4-HVMDIP 4-HVMDIP
RoHS Status RoHS non-compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

The IRFD9110PBF is a direct electrical and mechanical equivalent to the IRFD9110. Both devices share identical specifications across all critical parameters including voltage rating, current capability, on-state resistance, gate characteristics, and thermal performance.

The primary distinction between these parts is product status and regulatory compliance. The IRFD9110 is classified as obsolete, while the IRFD9110PBF maintains active product status. The IRFD9110PBF additionally carries ROHS3 compliance certification, whereas the IRFD9110 is RoHS non-compliant. Both devices maintain identical REACH Unaffected status and MSL Level 1 moisture sensitivity classification.

For applications requiring new component procurement or long-term design support, the IRFD9110PBF is the appropriate selection due to its active product status and enhanced regulatory compliance profile. The electrical performance and mechanical compatibility are identical, ensuring direct substitution without circuit modification or performance alteration.

Frequently Asked Questions (FAQ)

Q: Can the IRFD9110PBF be used as a direct replacement for the IRFD9110?

A: Yes. The IRFD9110PBF is electrically and mechanically identical to the IRFD9110 across all specified parameters. Both devices feature identical Vdss (100V), Id (700mA), Rds On (1.2Ω), gate characteristics, and thermal specifications. The 4-DIP through-hole package is identical, enabling direct board-level substitution without modification.

Q: What is the significance of the product status difference between these parts?

A: The IRFD9110 carries an obsolete designation, indicating discontinued manufacturing and limited availability. The IRFD9110PBF maintains active product status with ongoing production and supply chain availability. For new designs or production requiring component longevity, the active-status IRFD9110PBF is the appropriate selection.

Q: How does RoHS compliance affect substitution?

A: The IRFD9110PBF is ROHS3 compliant, while the IRFD9110 is RoHS non-compliant. This distinction is relevant for applications subject to RoHS regulatory requirements. The IRFD9110PBF satisfies these compliance obligations, whereas the IRFD9110 does not. Electrical performance and circuit operation are unaffected by this compliance difference.

Q: Are the packaging specifications identical between these parts?

A: Yes. Both the IRFD9110 and IRFD9110PBF utilize the 4-DIP (0.300", 7.62mm) package with 4-HVMDIP supplier device package designation. Pin configuration, lead spacing, and through-hole mounting characteristics are identical, enabling direct PCB compatibility.

Q: What are the key electrical parameters that define substitution eligibility?

A: Substitution is determined by equivalence across Vdss (100V), continuous drain current (700mA), on-state resistance (1.2Ω at specified conditions), gate threshold voltage (4V), gate charge (8.7nC), maximum gate voltage (±20V), input capacitance (200pF), power dissipation (1.3W), and operating temperature range (-55°C to 175°C). All parameters must match exactly for direct substitution classification.

Q: Is the IRFD9110PBF suitable for applications originally designed with the IRFD9110?

A: Yes. The IRFD9110PBF is suitable for all applications originally designed with the IRFD9110. Electrical characteristics, thermal performance, and mechanical compatibility are identical. No circuit redesign, component derating, or performance adjustment is required.

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