IRFD213 Equivalent & Substitute Parts

Part Overview

The IRFD213 is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 250V drain-to-source voltage with 450mA continuous drain current. This device features a through-hole 4-HVMDIP package and is designed for general-purpose switching applications in the 250V class.

The IRFD213 is classified as obsolete. Locating equivalent substitute parts is necessary to support ongoing maintenance, repair, and legacy system requirements where this component remains in service or where design continuity is required.

Substiute Parts

IRFD213
Vishay SiliconixIn Stock: 19982IRFD213 Datasheet
IRFD213
Current Part
IRFD214PBF
Vishay SiliconixIn Stock: 6861IRFD214PBF Datasheet
IRFD214PBF
MFR Recommended

Key Parameters

Parameter Value Condition
FET Type N-Channel
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 450 mA Ta
Rds On (Max) 2 Ω @ 270mA, 10V
Vgs(th) (Max) 4 V @ 250µA
Gate Charge (Qg) (Max) 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) 140 pF @ 25 V
Operating Temperature Range -55°C to 150°C TJ
Mounting Type Through Hole
Package / Case 4-DIP (0.300", 7.62mm)
Supplier Device Package 4-HVMDIP

Substitute Part Grouping Explanation

Substitution of the IRFD213 is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

  • FET Type: N-Channel topology must be maintained
  • Drain to Source Voltage (Vdss): 250 V minimum rating required
  • Continuous Drain Current (Id): 450 mA minimum at 25°C
  • On-State Resistance (Rds On): 2 Ω maximum at specified conditions
  • Gate Threshold Voltage (Vgs(th)): 4 V maximum
  • Gate Charge (Qg): 8.2 nC maximum at 10V
  • Input Capacitance (Ciss): 140 pF maximum at 25V
  • Operating Temperature Range: -55°C to 150°C minimum

Mechanical Equivalence Criteria:

  • Mounting Type: Through Hole required
  • Package: 4-DIP (0.300", 7.62mm) form factor
  • Supplier Device Package: 4-HVMDIP

Substitute parts must satisfy all electrical parameters at or above the specified ratings and maintain identical mechanical packaging to ensure direct board-level compatibility without layout modification.

Parameter Comparison

Parameter IRFD213 IRFD214PBF Match Status
Manufacturer Vishay Siliconix Vishay Siliconix Identical
FET Type N-Channel N-Channel Identical
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) Identical
Drain to Source Voltage (Vdss) 250 V 250 V Identical
Current - Continuous Drain (Id) @ 25°C 450 mA 450 mA Identical
Rds On (Max) @ Id, Vgs 2 Ω @ 270mA, 10V 2 Ω @ 270mA, 10V Identical
Vgs(th) (Max) @ Id 4 V @ 250µA 4 V @ 250µA Identical
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V 8.2 nC @ 10 V Identical
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V 140 pF @ 25 V Identical
Operating Temperature Range -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) Identical
Mounting Type Through Hole Through Hole Identical
Package / Case 4-DIP (0.300", 7.62mm) 4-DIP (0.300", 7.62mm) Identical
Supplier Device Package 4-HVMDIP 4-HVMDIP Identical
Product Status Obsolete Active Substitute is Active
RoHS Status RoHS non-compliant ROHS3 Compliant Substitute is Compliant

Engineering Selection Recommendations

The IRFD214PBF is a direct electrical and mechanical equivalent to the IRFD213. Both devices share identical electrical specifications across all critical parameters: 250V Vdss rating, 450mA continuous drain current, 2Ω on-state resistance, and matching gate charge and input capacitance characteristics. Both devices are housed in the 4-DIP (0.300", 7.62mm) through-hole package with 4-HVMDIP supplier designation, enabling direct board-level substitution without layout modification.

The primary distinction between these parts is product lifecycle status and regulatory compliance. The IRFD213 is classified as obsolete, while the IRFD214PBF maintains active product status with current manufacturing support. Additionally, the IRFD214PBF is ROHS3 compliant, whereas the IRFD213 is RoHS non-compliant. For new designs or systems requiring regulatory compliance, the IRFD214PBF is the appropriate selection. For legacy system maintenance where the original IRFD213 specification must be preserved, the IRFD214PBF provides full functional equivalence.

Frequently Asked Questions (FAQ)

Q: Can the IRFD214PBF be used as a direct replacement for the IRFD213 without circuit modification?

A: Yes. The IRFD214PBF is electrically and mechanically equivalent to the IRFD213. All critical electrical parameters—Vdss, Id, Rds On, Vgs(th), gate charge, and input capacitance—are identical. Both devices use the 4-DIP through-hole package, enabling direct board-level substitution without layout changes or circuit redesign.

Q: What is the difference between the IRFD213 and IRFD214PBF?

A: The electrical and mechanical specifications are identical. The IRFD214PBF differs in product status (active versus obsolete) and regulatory compliance (ROHS3 compliant versus RoHS non-compliant). The IRFD214PBF includes specified power dissipation rating of 1W at Ta, whereas this parameter is not provided for the IRFD213.

Q: Is the IRFD214PBF suitable for new product designs?

A: Yes. The IRFD214PBF is classified as an active product with current manufacturing support and ROHS3 compliance, making it appropriate for new designs. It provides the same electrical performance as the obsolete IRFD213 with the advantage of ongoing availability and regulatory compliance.

Q: Are there any packaging differences between these parts?

A: No. Both the IRFD213 and IRFD214PBF use the 4-DIP (0.300", 7.62mm) through-hole package with 4-HVMDIP supplier designation. Pin configuration and physical dimensions are identical, ensuring mechanical compatibility.

Q: What is the operating temperature range for both devices?

A: Both the IRFD213 and IRFD214PBF operate across the temperature range of -55°C to 150°C (junction temperature). This specification is identical for both parts.

Q: Can the IRFD214PBF handle the same voltage and current levels as the IRFD213?

A: Yes. Both devices are rated for 250V drain-to-source voltage and 450mA continuous drain current at 25°C. On-state resistance is specified at 2Ω maximum under identical conditions (270mA, 10V gate-source voltage).

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