IRF9956 Equivalent & Substitute Parts Reference

Part Overview

The IRF9956 is a dual N-channel MOSFET array manufactured by Infineon Technologies, designed for surface mount applications requiring logic level gate control. This component integrates two N-channel MOSFETs in a single 8-SOIC package, rated for 30V drain-source voltage and 3.5A continuous drain current at 25°C.

The IRF9956 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support legacy system maintenance or redesign initiatives.

Substiute Parts

IRF9956
Infineon TechnologiesIn Stock: 1609IRF9956 Datasheet
IRF9956
Current Part
IRF9956TRPBF
Infineon TechnologiesIn Stock: 4733IRF9956TRPBF Datasheet
IRF9956TRPBF
Direct
SP8K5TB
Rohm SemiconductorIn Stock: 7949SP8K5TB Datasheet
SP8K5TB
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 3.5 A
Rds On (Max) @ Id, Vgs 100 mOhm @ 2.2A, 10V mOhm
Vgs(th) (Max) @ Id 1 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 15V
Power - Max 2 W
Operating Temperature Range -55 to 150 °C (TJ)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution eligibility for the IRF9956 is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

  • Drain to Source Voltage (Vdss): 30V
  • Configuration: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Mounting Type: Surface Mount
  • Technology: MOSFET (Metal Oxide)

Performance Parameters (Must Meet or Exceed):

  • Current - Continuous Drain (Id) @ 25°C: ≥ 3.5A
  • Power - Max: ≥ 2W
  • Operating Temperature Range: Must include -55°C to 150°C or equivalent upper limit

Allowable Variations:

  • Rds On (Max): May vary within acceptable switching loss parameters
  • Vgs(th) (Max): May vary within logic level gate specification
  • Gate Charge (Qg) (Max): May vary within acceptable gate drive requirements
  • Input Capacitance (Ciss) (Max): May vary within acceptable switching speed parameters
  • Packaging format (Cut Tape vs. Bulk): Acceptable variation
  • RoHS compliance status: Acceptable variation for legacy applications

Substitute parts identified in this reference meet all mandatory matching parameters and performance requirements.

Parameter Comparison

Parameter IRF9956 IRF9956TRPBF SP8K5TB
Manufacturer Infineon Technologies Infineon Technologies Rohm Semiconductor
Drain to Source Voltage (Vdss) 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 3.5A 3.5A 3.5A
Rds On (Max) @ Id, Vgs 100 mOhm @ 2.2A, 10V 100 mOhm @ 2.2A, 10V 83 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10V 14 nC @ 10V 3.5 nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 15V 190 pF @ 15V 140 pF @ 10V
Power - Max 2W 2W 2W
Operating Temperature Range -55 to 150°C (TJ) -55 to 150°C (TJ) 150°C (TJ)
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount Surface Mount Surface Mount
Product Status Obsolete Obsolete Active
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

IRF9956TRPBF (Infineon Technologies)

This part is a direct equivalent to the IRF9956, sharing identical electrical specifications and package configuration. The primary distinction is packaging format (Cut Tape vs. standard packaging) and RoHS3 compliance status. IRF9956TRPBF is classified as obsolete, matching the status of the original part. Selection of this substitute is appropriate for applications requiring exact electrical and mechanical compatibility with minimal design modification. Inventory availability is higher (4713 Pcs) compared to the base IRF9956 (1570 Pcs).

SP8K5TB (Rohm Semiconductor)

This part meets all mandatory substitution criteria and is classified as active product status, providing superior long-term supply chain availability. Electrical performance is equivalent or superior across all parameters: Rds On is lower (83 mOhm vs. 100 mOhm), gate charge is significantly lower (3.5 nC vs. 14 nC), and input capacitance is lower (140 pF vs. 190 pF). The SP8K5TB exhibits higher Vgs(th) (2.5V vs. 1V), which remains within logic level gate specifications. Operating temperature specification lists 150°C maximum without explicit lower limit; applications requiring -55°C minimum operation must confirm compatibility with Rohm documentation. RoHS3 compliance and active product status support new design implementations and legacy system maintenance. Inventory availability is highest (7888 Pcs).

Frequently Asked Questions (FAQ)

Q: Can IRF9956TRPBF be used as a direct replacement for IRF9956?

A: Yes. IRF9956TRPBF is electrically and mechanically identical to IRF9956. The difference is packaging format (Cut Tape) and RoHS3 compliance. Both are classified as obsolete products. No circuit modifications are required.

Q: Is SP8K5TB a suitable substitute for IRF9956 in existing designs?

A: Yes. SP8K5TB meets all mandatory substitution parameters: 30V Vdss, 3.5A continuous drain current, dual N-channel configuration, logic level gate, and 8-SOIC package. Electrical performance is equivalent or superior. SP8K5TB is active product status, providing better long-term availability. Applications operating at -55°C minimum temperature should confirm lower temperature specification with Rohm documentation.

Q: What are the key differences between IRF9956 and SP8K5TB?

A: Both parts share identical voltage, current, power, and package specifications. SP8K5TB offers improved performance: lower on-resistance (83 mOhm vs. 100 mOhm), lower gate charge (3.5 nC vs. 14 nC), and lower input capacitance (140 pF vs. 190 pF). SP8K5TB has higher gate threshold voltage (2.5V vs. 1V) and is manufactured by Rohm Semiconductor instead of Infineon. SP8K5TB is active product status versus obsolete.

Q: Are there package compatibility concerns when substituting these parts?

A: No. All three parts use identical 8-SOIC (0.154", 3.90mm Width) surface mount packages. PCB footprints and reflow profiles are compatible. Packaging format differences (Cut Tape vs. Bulk) do not affect electrical or mechanical compatibility.

Q: What is the impact of lower gate charge in SP8K5TB?

A: Lower gate charge (3.5 nC vs. 14 nC) reduces gate drive power requirements and enables faster switching transitions. This is a performance advantage in applications with limited gate drive current or high-frequency switching requirements. No circuit modification is necessary; existing gate drive circuits will function correctly with reduced power consumption.

Q: Should I select an obsolete part or an active part substitute?

A: For new designs or long-term system maintenance, active product status (SP8K5TB) is preferred due to extended supply availability and manufacturer support. For legacy system repairs requiring exact historical compatibility, obsolete equivalents (IRF9956TRPBF) may be appropriate if inventory is available. Both approaches are valid depending on application requirements.

Q: Are there RoHS compliance implications when substituting?

A: IRF9956 is RoHS non-compliant. IRF9956TRPBF and SP8K5TB are both ROHS3 compliant. For applications subject to RoHS regulations, either substitute part is acceptable. For legacy systems without RoHS requirements, all three parts are functionally equivalent.

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