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IRF9952TR Equivalent & Substitute Parts
Part Overview
The IRF9952TR is an N and P-Channel MOSFET array manufactured by Infineon Technologies, designed for logic-level gate applications with a maximum drain-source voltage of 30V. This dual-channel configuration integrates complementary MOSFET functionality in a compact 8-SOIC surface mount package, delivering 3.5A continuous drain current for the N-channel and 2.3A for the P-channel at 25°C.
The IRF9952TR carries an obsolete product status. Identifying equivalent substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support ongoing production requirements for applications utilizing this MOSFET array configuration.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current (Id) @ 25°C - N-Channel | 3.5 | A |
| Continuous Drain Current (Id) @ 25°C - P-Channel | 2.3 | A |
| On-Resistance (Rds On Max) @ Id, Vgs | 100 | mOhm @ 2.2A, 10V |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 1 | V @ 250µA |
| Gate Charge (Qg Max) @ Vgs | 14 | nC @ 10V |
| Input Capacitance (Ciss Max) @ Vds | 190 | pF @ 15V |
| Maximum Power Dissipation | 2 | W |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package Type | 8-SOIC (0.154", 3.90mm Width) | Surface Mount |
| Configuration | N and P-Channel | Dual MOSFET Array |
| FET Feature | Logic Level Gate | — |
Substitute Part Grouping Explanation
Substitution eligibility for the IRF9952TR is determined by strict electrical and mechanical parameter matching across the following criteria:
Electrical Parameters (Must Match):
- Drain to Source Voltage (Vdss): 30V
- Continuous Drain Current (Id) @ 25°C: 3.5A (N-channel), 2.3A (P-channel)
- On-Resistance (Rds On): 100mOhm @ 2.2A, 10V
- Gate Threshold Voltage (Vgs(th)): 1V @ 250µA
- Gate Charge (Qg): 14nC @ 10V
- Input Capacitance (Ciss): 190pF @ 15V
- Maximum Power Dissipation: 2W
- Operating Temperature Range: -55°C to 150°C
Mechanical Parameters (Must Match):
- Package Type: 8-SOIC (0.154", 3.90mm Width)
- Mounting Type: Surface Mount
- Configuration: N and P-Channel MOSFET Array
- FET Feature: Logic Level Gate
Functional Parameters (Must Match):
- Technology: MOSFET (Metal Oxide)
- Series: HEXFET®
- Manufacturer: Infineon Technologies
The IRF9952TRPBF qualifies as a direct substitute based on identical electrical specifications, mechanical packaging, and functional configuration. The primary distinction is packaging format and product status compliance.
Parameter Comparison
| Parameter | IRF9952TR | IRF9952TRPBF | Match Status |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Identical |
| Drain to Source Voltage (Vdss) | 30V | 30V | Identical |
| Continuous Drain Current (Id) @ 25°C - N-Channel | 3.5A | 3.5A | Identical |
| Continuous Drain Current (Id) @ 25°C - P-Channel | 2.3A | 2.3A | Identical |
| On-Resistance (Rds On Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V | 100mOhm @ 2.2A, 10V | Identical |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 1V @ 250µA | 1V @ 250µA | Identical |
| Gate Charge (Qg Max) @ Vgs | 14nC @ 10V | 14nC @ 10V | Identical |
| Input Capacitance (Ciss Max) @ Vds | 190pF @ 15V | 190pF @ 15V | Identical |
| Maximum Power Dissipation | 2W | 2W | Identical |
| Operating Temperature Range | -55°C to 150°C (TJ) | -55°C to 150°C (TJ) | Identical |
| Package Type | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | Identical |
| Mounting Type | Surface Mount | Surface Mount | Identical |
| Configuration | N and P-Channel | N and P-Channel | Identical |
| FET Feature | Logic Level Gate | Logic Level Gate | Identical |
| Series | HEXFET® | HEXFET® | Identical |
| Product Status | Obsolete | Active | Different |
| Packaging Format | Bulk | Tape & Reel (TR) | Different |
| RoHS Status | RoHS Non-Compliant | RoHS3 Compliant | Different |
Engineering Selection Recommendations
IRF9952TRPBF as Primary Substitute:
The IRF9952TRPBF is the direct functional equivalent of the IRF9952TR. All electrical parameters, mechanical specifications, and operational characteristics are identical. The substitute part is manufactured by the same supplier (Infineon Technologies) and maintains the same HEXFET® series designation and dual N/P-channel MOSFET array configuration.
Compliance Considerations:
The IRF9952TRPBF carries an Active product status, ensuring ongoing manufacturer support and supply chain availability. This contrasts with the obsolete status of the IRF9952TR. The IRF9952TRPBF is RoHS3 compliant, whereas the IRF9952TR is RoHS non-compliant. For applications subject to RoHS regulatory requirements, the IRF9952TRPBF satisfies compliance obligations.
Packaging Format:
The IRF9952TRPBF is supplied in Tape & Reel (TR) format, suitable for automated assembly processes. The IRF9952TR was supplied in bulk packaging. Selection between these formats depends on production volume and assembly methodology. Both parts are identical in electrical and mechanical specifications.
Supply Chain Continuity:
With 86,654 pieces in stock, the IRF9952TRPBF provides superior supply chain reliability compared to the obsolete IRF9952TR. For new designs or production continuation, the IRF9952TRPBF is the recommended selection.
Frequently Asked Questions (FAQ)
Q: Can the IRF9952TRPBF be used as a direct replacement for the IRF9952TR in existing designs?
A: Yes. The IRF9952TRPBF is electrically and mechanically identical to the IRF9952TR. All electrical parameters, including Vdss, Id, Rds On, Vgs(th), Qg, Ciss, and power dissipation, are identical. The 8-SOIC package dimensions and pin configuration are unchanged. Direct substitution is supported without circuit modification.
Q: What is the difference between IRF9952TR and IRF9952TRPBF?
A: The primary differences are product status, RoHS compliance, and packaging format. The IRF9952TR is obsolete and RoHS non-compliant, supplied in bulk packaging. The IRF9952TRPBF is active, RoHS3 compliant, and supplied in Tape & Reel format. Electrical and mechanical specifications are identical.
Q: Is the IRF9952TRPBF suitable for high-volume production?
A: Yes. The IRF9952TRPBF is supplied in Tape & Reel format, which is standard for automated assembly processes. With active product status and substantial inventory availability, it is suitable for high-volume production applications.
Q: Does the RoHS3 compliance of IRF9952TRPBF affect circuit performance?
A: No. RoHS3 compliance indicates conformance to hazardous substance restrictions and does not alter electrical performance, thermal characteristics, or operational specifications. All electrical parameters remain identical to the IRF9952TR.
Q: Are there any thermal or reliability differences between the two parts?
A: No. Both parts share identical operating temperature ranges (-55°C to 150°C), maximum power dissipation (2W), and thermal characteristics. The HEXFET® technology and manufacturing process are equivalent.
Q: What is the pin configuration of the 8-SOIC package?
A: The 8-SOIC package contains eight pins with 0.154" (3.90mm) width. Both the IRF9952TR and IRF9952TRPBF use identical pin assignments for the N-channel and P-channel MOSFET array configuration. Refer to the manufacturer datasheet for detailed pinout information.
Q: Can the IRF9952TRPBF be used in applications originally designed for the IRF9952TR without PCB modifications?
A: Yes. The package footprint, pin spacing, and mechanical dimensions are identical. No PCB layout modifications are required for direct substitution.
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