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IRF9640STRL P-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The IRF9640STRL is a P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 200V drain-to-source voltage with 11A continuous drain current. The device is packaged in a Surface Mount TO-263 (D2PAK) configuration and is designed for switching and amplification applications requiring moderate power dissipation in compact form factors.
The IRF9640STRL carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support ongoing production requirements for applications utilizing this component.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 200 | V |
| Continuous Drain Current (Id) @ 25°C | 11 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 500 | mOhm @ 6.6A, 10V |
| Gate Threshold Voltage Vgs(th) (Max) @ Id | 4 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 44 | nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 | pF @ 25V |
| Power Dissipation (Max) | 3W (Ta), 125W (Tc) | W |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Mounting Type | Surface Mount | — |
| Package / Case | TO-263-3, D2PAK | — |
| FET Type | P-Channel | — |
Substitute Part Grouping Explanation
Substitution eligibility for the IRF9640STRL is determined by the following critical parameters:
Voltage Rating: Drain-to-source voltage (Vdss) must be 200V or greater to maintain electrical safety margins in the application circuit.
Current Rating: Continuous drain current (Id) must be 11A or greater at 25°C to support the load requirements without thermal derating.
On-State Resistance: Rds On (Max) must not exceed 500 mOhm at the specified gate-source voltage (10V) to maintain acceptable power dissipation and thermal performance.
Gate Threshold Voltage: Vgs(th) must be 4V or less at 250µA to ensure proper gate drive compatibility.
Package Compatibility: All substitute parts must use the TO-263 (D2PAK) Surface Mount package to maintain mechanical and thermal interface compatibility.
Channel Type: All substitutes must be P-Channel MOSFETs to preserve circuit polarity and functionality.
Substitute parts are grouped into two categories: Parametric Equivalents (identical electrical specifications) and Manufacturer Recommended Alternatives (enhanced or comparable performance characteristics).
Parameter Comparison
| Parameter | IRF9640STRL | IRF9640STRLPBF | SIHF9640S-GE3 | FQB12P20TM |
|---|---|---|---|---|
| Manufacturer | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | onsemi |
| Vdss (V) | 200 | 200 | 200 | 200 |
| Id @ 25°C (A) | 11 | 11 | 11 | 11.5 |
| Rds On (Max) (mOhm) | 500 @ 6.6A, 10V | 500 @ 6.6A, 10V | 500 @ 6.6A, 10V | 470 @ 5.75A, 10V |
| Vgs(th) (Max) (V) | 4 @ 250µA | 4 @ 250µA | 4 @ 250µA | 5 @ 250µA |
| Qg (Max) (nC) | 44 @ 10V | 44 @ 10V | 44 @ 10V | 40 @ 10V |
| Ciss (Max) (pF) | 1200 @ 25V | 1200 @ 25V | 1200 @ 25V | 1200 @ 25V |
| Power Dissipation (Max) | 3W (Ta), 125W (Tc) | 3W (Ta), 125W (Tc) | 3W (Ta), 125W (Tc) | 3.13W (Ta), 120W (Tc) |
| Operating Temperature (°C) | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 |
| Package | TO-263 (D2PAK) | TO-263 (D2PAK) | TO-263 (D2PAK) | TO-263 (D2PAK) |
| Product Status | Obsolete | Active | Active | Active |
| RoHS Status | Non-compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
IRF9640STRLPBF (Vishay Siliconix): This part is a direct parametric equivalent to the IRF9640STRL with identical electrical specifications. The primary distinction is product status: IRF9640STRLPBF is Active, whereas the original part is Obsolete. IRF9640STRLPBF carries ROHS3 compliance certification, addressing regulatory requirements for new designs and production. Packaging is available in Cut Tape (CT) and Digi-Reel® formats with 27,900 units in stock, providing superior supply chain availability. This part is the preferred direct replacement for the IRF9640STRL.
SIHF9640S-GE3 (Vishay Siliconix): This part maintains identical electrical parameters to the IRF9640STRL and is manufactured by the same supplier. Product status is Active with ROHS3 compliance. Packaging is supplied in Tape & Reel (TR) format with 3,400 units in stock. This part serves as an alternative equivalent when Cut Tape packaging is not required or when Tape & Reel format is preferred for automated assembly processes.
FQB12P20TM (onsemi): This part is a manufacturer-recommended alternative with enhanced performance characteristics. It meets or exceeds all critical parameters: Vdss is 200V, Id is 11.5A (0.5A higher than the original), and Rds On is 470 mOhm (30 mOhm lower than the original), resulting in improved efficiency and reduced thermal dissipation. Power dissipation is 3.13W (Ta) and 120W (Tc), comparable to the original specification. The part carries ROHS3 compliance and is available in Cut Tape (CT) and Digi-Reel® formats with 6,816 units in stock. FQB12P20TM is suitable for applications where enhanced current handling or reduced on-state losses provide design benefits.
All three substitute parts are Surface Mount TO-263 (D2PAK) devices with identical package footprints and thermal interface characteristics, ensuring direct mechanical compatibility with existing PCB designs.
Frequently Asked Questions (FAQ)
Q: Can IRF9640STRLPBF be used as a direct replacement for IRF9640STRL?
A: Yes. IRF9640STRLPBF is a parametric equivalent with identical electrical specifications: 200V Vdss, 11A Id, 500 mOhm Rds On, 4V Vgs(th), 44 nC Qg, and 1200 pF Ciss. Both devices use the TO-263 (D2PAK) Surface Mount package. The primary difference is product status (Active vs. Obsolete) and RoHS compliance (ROHS3 vs. Non-compliant). IRF9640STRLPBF is the recommended replacement.
Q: What is the difference between SIHF9640S-GE3 and IRF9640STRLPBF?
A: Both parts are parametric equivalents with identical electrical specifications and are manufactured by Vishay Siliconix. The difference is packaging format: IRF9640STRLPBF is supplied in Cut Tape (CT) and Digi-Reel® format, while SIHF9640S-GE3 is supplied in Tape & Reel (TR) format. Selection depends on assembly process requirements and inventory management preferences.
Q: How does FQB12P20TM compare to the IRF9640STRL?
A: FQB12P20TM is a manufacturer-recommended alternative manufactured by onsemi. It meets all critical substitution criteria: 200V Vdss, 11.5A Id (higher than the original 11A), and 470 mOhm Rds On (lower than the original 500 mOhm). The lower on-state resistance results in reduced power dissipation and improved efficiency. All other parameters are comparable or equivalent. The TO-263 (D2PAK) package ensures mechanical compatibility.
Q: Are all substitute parts RoHS compliant?
A: IRF9640STRLPBF and SIHF9640S-GE3 are ROHS3 compliant. FQB12P20TM is also ROHS3 compliant. The original IRF9640STRL is RoHS non-compliant. For applications requiring RoHS compliance, any of the three substitute parts are suitable.
Q: Can these parts be used interchangeably in existing designs?
A: Yes, all substitute parts use the TO-263 (D2PAK) Surface Mount package with identical pinout and thermal interface. Electrical parameters are equivalent or superior, ensuring functional compatibility. No circuit modifications are required for substitution.
Q: What is the inventory status for each substitute part?
A: IRF9640STRLPBF has 27,900 units in stock. SIHF9640S-GE3 has 3,400 units in stock. FQB12P20TM has 6,816 units in stock. All parts are available as New Original stock.
Q: Which substitute part should be selected for new designs?
A: IRF9640STRLPBF is the recommended choice for new designs due to superior inventory availability (27,900 units), Active product status, ROHS3 compliance, and direct parametric equivalence. It provides the lowest risk for long-term supply chain continuity.
Q: Does the gate threshold voltage difference in FQB12P20TM affect circuit operation?
A: FQB12P20TM has a Vgs(th) of 5V compared to 4V for the IRF9640STRL. This 1V difference is within typical gate drive circuit tolerances and does not prevent substitution. The higher threshold voltage may result in slightly slower switching response in marginal gate drive conditions, but standard gate drive circuits (10V or higher) operate within normal parameters.
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