IRF9335PBF P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF9335PBF is a P-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications requiring 30V drain-to-source voltage capability with 5.4A continuous drain current. This device is part of the HEXFET® series and operates across the industrial temperature range of -55°C to 150°C.

The IRF9335PBF has been discontinued at DiGi Electronics, making identification of functionally equivalent substitute components essential for ongoing design support, production continuity, and component sourcing. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while conforming to the same surface mount package footprint.

Substiute Parts

IRF9335PBF

Infineon TechnologiesIn Stock: 45619IRF9335PBF Datasheet

Current PartRFQ

AO4405

UMWIn Stock: 60302AO4405 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF9335PBF is determined by strict equivalence across the following electrical and mechanical criteria:

Electrical Compatibility Requirements:

• FET channel type must be P-Channel
• Drain-to-source voltage rating (Vdss) must be 30V or greater
• Continuous drain current (Id) must meet or exceed 5.4A at 25°C
• On-resistance (Rds On) must not exceed the maximum specified value to ensure thermal performance within design limits
• Gate threshold voltage (Vgs(th)) and maximum gate voltage (Vgs Max) must fall within ±20V specification
• Operating temperature range must span -55°C to 150°C

Mechanical Compatibility Requirements:

• Package must be 8-SOIC with 0.154" (3.90mm) width for PCB footprint compatibility
• Mounting type must be surface mount
• Pin configuration must be functionally equivalent

Compliance Requirements:

• RoHS3 compliance required
• Moisture sensitivity level (MSL) of 1 or equivalent
• REACH unaffected status

The AO4405 manufactured by UMW meets all substitution criteria and is classified as a direct equivalent.

Parameter Comparison

Engineering Selection Recommendations

AO4405 as Primary Substitute:

The AO4405 is a direct functional equivalent to the IRF9335PBF for applications requiring P-Channel MOSFET operation at 30V with continuous drain current of 5.4A or greater. The substitute part demonstrates superior electrical performance in key areas:

• Continuous drain current rating of 6A exceeds the IRF9335PBF specification of 5.4A
• On-resistance of 45mOhm at 6A, 10V is lower than the IRF9335PBF specification of 59mOhm at 5.4A, 10V, resulting in reduced power dissipation and improved thermal efficiency
• Maximum power dissipation of 3.1W provides additional thermal margin compared to the 2.5W rating of the original part
• Identical 8-SOIC package footprint ensures direct PCB compatibility without layout modification

Both devices maintain identical voltage ratings (Vdss = 30V, Vgs Max = ±20V), operating temperature range (-55°C to 150°C), and regulatory compliance (RoHS3, REACH unaffected, MSL 1).

The AO4405 is currently in active production status with 60,200 pieces available in inventory, providing supply chain continuity for the discontinued IRF9335PBF.

Frequently Asked Questions (FAQ)

Q: Can the AO4405 be used as a direct replacement for the IRF9335PBF without circuit modification?

A: Yes. The AO4405 is electrically and mechanically compatible with the IRF9335PBF. Both devices share identical drain-to-source voltage (30V), gate voltage specifications (±20V), operating temperature range (-55°C to 150°C), and 8-SOIC package footprint. No circuit redesign or PCB layout changes are required for substitution.

Q: What are the key electrical differences between these two parts?

A: The AO4405 provides improved performance specifications compared to the IRF9335PBF. The continuous drain current is rated at 6A versus 5.4A, on-resistance is 45mOhm versus 59mOhm (both at 10V gate voltage), and maximum power dissipation is 3.1W versus 2.5W. These differences result in lower thermal generation and higher current capacity in the substitute part.

Q: Are there any package or pinout differences between the IRF9335PBF and AO4405?

A: No. Both devices use the 8-SOIC package with 0.154" (3.90mm) width. The physical dimensions and pin configuration are identical, enabling direct PCB footprint compatibility without layout modification.

Q: Do both parts meet the same regulatory and compliance standards?

A: Yes. Both the IRF9335PBF and AO4405 are RoHS3 compliant, REACH unaffected, and carry MSL 1 (unlimited moisture sensitivity level) ratings. They meet identical environmental and regulatory requirements for industrial applications.

Q: Why is the IRF9335PBF discontinued while the AO4405 remains in active production?

A: Product discontinuation decisions are based on manufacturer production strategies and market demand. The AO4405 remains in active production with substantial inventory availability (60,200 pieces), making it the recommended source for ongoing component procurement in applications previously using the IRF9335PBF.

Q: What is the significance of the lower on-resistance in the AO4405?

A: Lower on-resistance (45mOhm versus 59mOhm) reduces resistive power dissipation during operation. For a given drain current, this results in lower junction temperature rise, improved thermal efficiency, and extended device reliability. This characteristic makes the AO4405 suitable for applications with higher current demands or thermal constraints.

Q: Are gate charge and input capacitance specifications equivalent between these parts?

A: Gate charge and input capacitance differ slightly between the parts. The AO4405 has lower gate charge (11nC versus 14nC at 10V) and higher input capacitance (520pF versus 386pF). These differences do not affect substitution compatibility but may influence gate drive circuit design in high-frequency switching applications.