IRF8910GPBF Equivalent & Substitute Parts

Part Overview

The IRF8910GPBF is a dual N-channel MOSFET array manufactured by Infineon Technologies, designed for surface mount applications requiring logic level gate control. This device features a 20V drain-to-source voltage rating with 10A continuous drain current capability and is housed in an 8-SOIC package. The IRF8910GPBF is classified as obsolete, necessitating identification of active equivalent parts for ongoing design support and procurement continuity. Substitute parts must maintain electrical and mechanical compatibility within the specified parameter ranges.

Substiute Parts

IRF8910GPBF
Infineon TechnologiesIn Stock: 1520IRF8910GPBF Datasheet
IRF8910GPBF
Current Part
AO4806
Alpha & Omega Semiconductor Inc.In Stock: 6221AO4806 Datasheet
AO4806
MFR Recommended
FDS6898A
onsemiIn Stock: 23974FDS6898A Datasheet
FDS6898A
MFR Recommended
FDS6898AZ
onsemiIn Stock: 28606FDS6898AZ Datasheet
FDS6898AZ
MFR Recommended

Key Parameters

Parameter Value Specification
Configuration 2 N-Channel (Dual) Mosfet Array
Drain to Source Voltage (Vdss) 20V Maximum rated voltage
Current - Continuous Drain (Id) @ 25°C 10A Maximum continuous current
Rds On (Max) @ Id, Vgs 13.4mOhm @ 10A, 10V On-state drain-source resistance
FET Feature Logic Level Gate Gate drive compatibility
Package / Case 8-SOIC (0.154", 3.90mm Width) Surface mount footprint
Operating Temperature Range -55°C ~ 150°C (TJ) Junction temperature limits
Power - Max 2W Maximum power dissipation
Mounting Type Surface Mount PCB assembly method

Substitute Part Grouping Explanation

Substitution eligibility for the IRF8910GPBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Dual N-channel MOSFET configuration
  • Drain-to-source voltage rating of 20V
  • 8-SOIC surface mount package (0.154", 3.90mm Width)
  • Logic level gate feature
  • Operating temperature range of -55°C to 150°C (TJ)

Secondary Compatibility Parameters:

  • On-state resistance (Rds On) at rated conditions
  • Continuous drain current capability
  • Gate charge and input capacitance characteristics
  • Power dissipation rating

All substitute parts listed maintain the core electrical specifications and physical package dimensions required for direct PCB footprint compatibility. Variations in secondary parameters (such as gate charge and input capacitance) are within acceptable ranges for equivalent functional performance in typical applications.

Parameter Comparison

Parameter IRF8910GPBF (Main) AO4806 FDS6898A FDS6898AZ
Manufacturer Infineon Technologies Alpha & Omega Semiconductor Inc. onsemi onsemi
Product Status Obsolete Active Active Active
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
Vdss 20V 20V 20V 20V
Id @ 25°C 10A Not specified 9.4A 9.4A
Rds On (Max) 13.4mOhm @ 10A, 10V 14mOhm @ 9.4A, 10V 14mOhm @ 9.4A, 4.5V 14mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id 2.55V @ 250µA 1V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V 17.9nC @ 4.5V 23nC @ 4.5V 23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 10V 1810pF @ 10V 1821pF @ 10V 1821pF @ 10V
Power - Max 2W 2W 900mW 900mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

AO4806 (Alpha & Omega Semiconductor Inc.)

The AO4806 is an active product with ROHS3 compliance and maintains full electrical and mechanical compatibility with the IRF8910GPBF. This part is suitable for applications where the main part's obsolescence requires immediate replacement. The AO4806 exhibits slightly higher gate charge (17.9nC) and input capacitance (1810pF) compared to the original specification, which may require verification in gate drive circuits with tight timing constraints. Current inventory availability is 6175 units.

FDS6898A (onsemi)

The FDS6898A is an active product manufactured by onsemi under the PowerTrench® series with ROHS3 compliance. This part maintains the 20V Vdss rating and 8-SOIC package compatibility. The FDS6898A operates at 9.4A continuous drain current, which is within acceptable range for applications designed for the 10A IRF8910GPBF specification. Gate charge is specified at 23nC @ 4.5V, and power dissipation is rated at 900mW. Current inventory availability is 23874 units.

FDS6898AZ (onsemi)

The FDS6898AZ is an active product manufactured by onsemi under the PowerTrench® series with ROHS3 compliance. Electrical specifications are identical to the FDS6898A, with 9.4A continuous drain current and 20V Vdss rating. The FDS6898AZ is supplied in Cut Tape (CT) & Digi-Reel® packaging format. Current inventory availability is 28565 units.

All three substitute parts satisfy the core substitution criteria: dual N-channel configuration, 20V voltage rating, 8-SOIC package footprint, logic level gate feature, and -55°C to 150°C operating temperature range. Selection between these alternatives should be based on packaging format requirements, gate drive circuit characteristics, and power dissipation constraints specific to the application.

Frequently Asked Questions (FAQ)

Q: Can the AO4806 be used as a direct replacement for the IRF8910GPBF?

A: The AO4806 maintains electrical and mechanical compatibility within the specified parameter ranges. Both devices feature 20V Vdss rating, dual N-channel configuration, logic level gate control, and 8-SOIC package dimensions. The AO4806 is an active product, whereas the IRF8910GPBF is obsolete. Gate charge and input capacitance values differ; circuit validation is necessary to confirm suitability for specific gate drive implementations.

Q: What is the difference between FDS6898A and FDS6898AZ?

A: The FDS6898A and FDS6898AZ are electrically identical parts from onsemi's PowerTrench® series. Both feature 9.4A continuous drain current, 20V Vdss rating, and 8-SOIC package. The primary difference is packaging format: FDS6898A is supplied in Cut Tape (CT) & Digi-Reel®, while FDS6898AZ is also supplied in Cut Tape (CT) & Digi-Reel® format. Electrical specifications and performance characteristics are identical.

Q: Are all substitute parts RoHS compliant?

A: Yes. The AO4806, FDS6898A, and FDS6898AZ are all ROHS3 compliant. The original IRF8910GPBF RoHS status is not specified in the provided data.

Q: What are the key electrical differences between the main part and substitutes?

A: The IRF8910GPBF specifies 10A continuous drain current and 13.4mOhm on-state resistance at 10A, 10V. The AO4806 does not specify continuous drain current but lists 14mOhm resistance at 9.4A, 10V. The FDS6898A and FDS6898AZ specify 9.4A continuous drain current and 14mOhm resistance at 9.4A, 4.5V. Gate charge increases from 11nC (IRF8910GPBF) to 17.9nC (AO4806) or 23nC (FDS6898A/AZ). Input capacitance increases from 960pF to 1810pF or 1821pF respectively.

Q: Is the 8-SOIC package footprint identical across all parts?

A: Yes. All parts—IRF8910GPBF, AO4806, FDS6898A, and FDS6898AZ—use the 8-SOIC package with 0.154" (3.90mm) width specification. PCB footprint compatibility is maintained across all devices.

Q: What is the operating temperature range for substitute parts?

A: All substitute parts operate across the same temperature range as the original: -55°C to 150°C junction temperature (TJ).

Q: Are there any compliance or regulatory differences?

A: All substitute parts maintain REACH Unaffected status and ECCN EAR99 classification, consistent with the original IRF8910GPBF. The substitute parts are ROHS3 compliant, whereas the original part's RoHS status is not specified.

Request Quote (Ships tomorrow)