IRF7901D1 Equivalent & Substitute Parts

Part Overview

The IRF7901D1 is a dual N-channel MOSFET array manufactured by Infineon Technologies, rated for 30V drain-source voltage and 6.2A continuous drain current. This component is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity. The part features logic-level gate operation suitable for low-voltage switching applications in surface-mount configurations.

Substiute Parts

IRF7901D1

Infineon TechnologiesIn Stock: 3100IRF7901D1 Datasheet

Current PartRFQ

SI4936ADY-T1-E3

Vishay SiliconixIn Stock: 3441SI4936ADY-T1-E3 Datasheet

MFR RecommendedRFQ

TSM4936DCS RLG

Taiwan Semiconductor CorporationIn Stock: 27750TSM4936DCS RLG Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7901D1 is determined by strict parameter matching across the following critical specifications:

Mandatory Matching Parameters:

• Drain-Source Voltage (Vdss): 30V
• Configuration: 2 N-Channel (Dual)
• Package Type: 8-SOIC form factor with 0.154" (3.90mm) width
• Operating Temperature Range: -55°C to 150°C (TJ)
• Mounting Type: Surface Mount

Functional Compatibility Parameters:

• Gate threshold voltage classification: Logic-level operation
• Continuous drain current: Minimum 4.4A (acceptable for applications designed for 6.2A)
• On-resistance: Within acceptable range for switching applications

The identified substitute parts meet these criteria while accommodating minor variations in maximum power dissipation and gate charge characteristics that do not affect functional compatibility in standard switching applications.

Parameter Comparison

Engineering Selection Recommendations

SI4936ADY-T1-E3 (Vishay Siliconix): This substitute is recommended for new designs and procurement requiring RoHS3 compliance. The part maintains 30V Vdss rating and dual N-channel configuration with 4.4A continuous drain current. While the maximum current rating is lower than the original IRF7901D1, it remains suitable for applications designed within this current envelope. The part carries Last Time Buy status, indicating extended availability. Gate threshold voltage of 3V @ 250µA maintains logic-level operation compatibility.

TSM4936DCS RLG (Taiwan Semiconductor Corporation): This substitute provides the closest current rating match at 5.9A, approaching the original 6.2A specification. The part offers superior power dissipation capability at 3W maximum, compared to the original 2W rating. RoHS3 compliance is provided. The part is designated Not For New Designs, indicating limited future availability and suitability primarily for legacy system support and maintenance applications. Moisture sensitivity level of 3 (168 hours) requires controlled storage conditions compared to the original MSL 1 rating.

Both substitutes maintain the critical 30V Vdss rating, dual N-channel configuration, 8-SOIC package form factor, and -55°C to 150°C operating temperature range required for functional equivalence.

Frequently Asked Questions (FAQ)

Q: Can SI4936ADY-T1-E3 replace IRF7901D1 in all applications?

A: SI4936ADY-T1-E3 is functionally equivalent for applications where continuous drain current does not exceed 4.4A. The 30V Vdss rating, dual N-channel configuration, 8-SOIC package, and logic-level gate operation are identical. Applications requiring the full 6.2A rating of the original part require evaluation of actual current demands.

Q: What is the difference in gate threshold voltage between the original and substitutes?

A: IRF7901D1 specifies Vgs(th) of 1V @ 250µA, while both substitutes specify 3V @ 250µA. Both remain within logic-level gate operation classification. Circuit designs must verify gate drive voltage compatibility with the higher threshold specification.

Q: Are there package compatibility concerns?

A: All three parts use 8-SOIC package with 0.154" (3.90mm) width. Physical footprint and pin configuration are identical, permitting direct PCB layout compatibility without modification.

Q: Why is TSM4936DCS RLG marked "Not For New Designs"?

A: This designation indicates the manufacturer has discontinued active development and support for this part number. While functionally suitable for legacy system maintenance, it is not recommended for new product development due to uncertain long-term availability.

Q: What compliance differences exist between the parts?

A: IRF7901D1 is RoHS non-compliant. Both SI4936ADY-T1-E3 and TSM4936DCS RLG are ROHS3 compliant, meeting current environmental regulations. All three parts are REACH Unaffected and classified as EAR99 for export control purposes.

Q: How do gate charge specifications affect circuit performance?

A: IRF7901D1 specifies 10.5nC @ 5V, while SI4936ADY-T1-E3 specifies 20nC @ 10V and TSM4936DCS RLG specifies 13nC @ 10V. Higher gate charge requires longer switching times and increased gate drive power. Circuit designs with tight switching frequency requirements must account for these differences.

Q: What is the significance of Moisture Sensitivity Level (MSL) differences?

A: IRF7901D1 and SI4936ADY-T1-E3 are MSL 1 (Unlimited), permitting indefinite storage without moisture control. TSM4936DCS RLG is MSL 3 (168 hours), requiring controlled storage conditions and bake-out procedures before reflow soldering if storage exceeds 168 hours at specified humidity levels.