IRF7805APBF N-Channel MOSFET 30V 13A Equivalent & Substitute Parts

Part Overview

The IRF7805APBF is an N-Channel MOSFET manufactured by Infineon Technologies, part of the HEXFET® series. This device is rated for 30V drain-to-source voltage with 13A continuous drain current at 25°C and 2.5W power dissipation. The IRF7805APBF is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity.

Substitute parts must maintain compatibility across critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, and thermal performance. All substitute devices listed are surface-mount 8-SOIC packages with matching mechanical dimensions and operating temperature ranges.

Key Parameters

Parameter	IRF7805APBF	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	13	A (Ta)
Rds On (Max) @ Id, Vgs	11	mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id	3	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	31	nC @ 5V
Vgs (Max)	±12	V
Power Dissipation (Max)	2.5	W (Ta)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7805APBF is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Package Type: Must be 8-SOIC surface mount with 0.154" (3.90mm) width
Operating Temperature Range: Must span -55°C to 150°C (TJ)
Moisture Sensitivity Level: MSL 1 (Unlimited) preferred for manufacturing compatibility
FET Type: N-Channel MOSFET technology

Performance Parameters for Substitution Assessment:

Continuous Drain Current (Id): Substitute must support minimum 13A at 25°C or equivalent thermal conditions
On-Resistance (Rds On): Lower or equivalent values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Vgs Threshold: Must be compatible with existing gate drive circuits

All three substitute parts meet the mandatory compatibility criteria. Differences in continuous drain current, on-resistance, and gate charge represent performance variations that may improve or maintain circuit operation depending on application requirements.

Parameter Comparison

Parameter	IRF7805APBF (Infineon)	FDS8880 (onsemi)	SI4420BDY-T1-E3 (Vishay)	SI4686DY-T1-GE3 (Vishay)	Unit
Drain to Source Voltage (Vdss)	30	30	30	30	V
Current - Continuous Drain (Id) @ 25°C	13	11.6	9.5	18.2	A
Rds On (Max) @ Vgs	11 @ 4.5V	10 @ 10V	8.5 @ 10V	9.5 @ 10V	mOhm
Vgs(th) (Max) @ Id	3 @ 250µA	2.5 @ 250µA	3 @ 250µA	3 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	31 @ 5V	30 @ 10V	50 @ 10V	26 @ 10V	nC
Vgs (Max)	±12	±20	±20	±20	V
Power Dissipation (Max)	2.5 (Ta)	2.5 (Ta)	1.4 (Ta)	3 (Ta)	W
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)	—
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	—
Product Status	Obsolete	Active	Active	Active	—
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

FDS8880 (onsemi PowerTrench®)

The FDS8880 is an active-status substitute with 11.6A continuous drain current, matching the 30V voltage rating and 2.5W power dissipation of the IRF7805APBF. On-resistance of 10mOhm at 10V is lower than the original 11mOhm specification, indicating improved efficiency. Gate charge of 30nC is comparable to the original 31nC. The FDS8880 carries ROHS3 compliance and MSL 1 rating, supporting modern manufacturing requirements. This device is suitable for direct replacement in applications where the 13A current requirement can be met with 11.6A capability.

SI4420BDY-T1-E3 (Vishay TrenchFET®)

The SI4420BDY-T1-E3 is an active-status substitute with 9.5A continuous drain current, representing a reduction from the original 13A specification. On-resistance of 8.5mOhm at 10V is superior to the original device. Power dissipation is rated at 1.4W (Ta), lower than the original 2.5W. This device is suitable for applications where continuous drain current requirements are 9.5A or lower, or where reduced power dissipation is beneficial. ROHS3 compliance and MSL 1 rating are provided.

SI4686DY-T1-GE3 (Vishay TrenchFET® / WFET®)

The SI4686DY-T1-GE3 is an active-status substitute with 18.2A continuous drain current, exceeding the original 13A specification. On-resistance of 9.5mOhm at 10V is lower than the original device. Power dissipation is rated at 3W (Ta) and 5.2W (Tc), exceeding the original 2.5W specification. Gate charge of 26nC is lower than the original 31nC, reducing switching losses. This device is suitable for applications requiring higher current capability or improved thermal performance. ROHS3 compliance is provided.

All three substitute parts are active-status devices with current manufacturing availability, REACH compliance, and EAR99 export classification matching the original part.

Frequently Asked Questions (FAQ)

Q: Can the FDS8880 replace the IRF7805APBF in all applications?

A: The FDS8880 is compatible with applications designed for the IRF7805APBF when continuous drain current does not exceed 11.6A. The 30V voltage rating, 8-SOIC package, and operating temperature range are identical. On-resistance is lower, which may improve efficiency. Gate drive circuits designed for the original device will function with the FDS8880.

Q: Is the SI4420BDY-T1-E3 suitable for high-current applications?

A: The SI4420BDY-T1-E3 is rated for 9.5A continuous drain current, which is lower than the original IRF7805APBF specification of 13A. This device is suitable for applications where the required continuous drain current is 9.5A or lower. Applications requiring the full 13A capability should use the FDS8880 or SI4686DY-T1-GE3.

Q: What are the package compatibility considerations?

A: All substitute parts use the 8-SOIC package with 0.154" (3.90mm) width, matching the original IRF7805APBF mechanical dimensions. PCB footprints and assembly processes require no modification. Moisture sensitivity level is MSL 1 (Unlimited) for all devices, supporting standard manufacturing and storage conditions.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The original IRF7805APBF specifies 31nC at 5V. The FDS8880 specifies 30nC at 10V, the SI4420BDY-T1-E3 specifies 50nC at 10V, and the SI4686DY-T1-GE3 specifies 26nC at 10V. Lower gate charge reduces switching losses and may improve efficiency. Gate drive circuits must supply sufficient current to charge the gate within the required switching time.

Q: Are all substitute parts RoHS compliant?

A: Yes. The FDS8880, SI4420BDY-T1-E3, and SI4686DY-T1-GE3 are all ROHS3 compliant. The original IRF7805APBF RoHS status is not specified in the provided data. All substitute parts meet current environmental and regulatory requirements for electronic component manufacturing and distribution.

Q: Which substitute part offers the best thermal performance?

A: The SI4686DY-T1-GE3 is rated for 3W (Ta) and 5.2W (Tc) power dissipation, exceeding the original 2.5W specification. This device provides improved thermal headroom for applications with elevated ambient temperatures or continuous high-current operation. The FDS8880 matches the original 2.5W rating, while the SI4420BDY-T1-E3 is rated for 1.4W.

Q: Can gate drive voltage be different between the original and substitute parts?

A: The original IRF7805APBF specifies Vgs (Max) of ±12V. All substitute parts specify ±20V maximum gate-source voltage, providing greater margin. Gate drive circuits designed for ±12V operation will function correctly with substitute parts rated for ±20V. No circuit modification is required.

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